Patent US4342148A successfully refreshed from Google Patents.
US4342148A
Expired / Lapsed
US
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Contemporaneous fabrication of double heterostructure light emitting diodes and laser diodes using liquid phase epitaxy
Assignee: Nortel Networks Ltd
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Filing: 1981-02-04
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Granted: 1982-08-03
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Expires: 2001-02-04
Abstract
Abstract In the manufacture of double heterostructure laser diodes using liquid phase epitaxy a source crystal precedes the laser substrate crystal through the process to ensure saturation of the various melts from which epitaxial growth is obtained. The source crystal has hitherto been discarded. The source crystal, since it immediately precedes the substrate crystal, also experiences epitaxial growth of a heterostructure but with heterostructure layer thicknesses unsuited for laser diode fabrication. By suitable processing of the source crystal after it is formed with a heterostructure, light emitting diodes can be produced so contributing to a 50% reduction in materials cost.
Inventors
- 👤 Anthony J. Springthorpe
- 👤 Agnes Margittai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 07:55
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10H20/80; H10H20/81; H10H20/811; H10H20/822; H10H20/824; Y; Y10; Y10S; Y10S438/00; Y10S438/964
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
364 words
A process for contemporaneously making double heterostructure light (LZD) emitting diodes and double heterostructure lasers using liquid phase epitaxy comprising: filling a first liquid phase epitaxy (LPE) reservoir with a liquid material having composition appropriate for growth therefrom of an epitaxial laser first confining layer; filling a second LPE reservoir with a liquid material having a composition appropriate for growth therefrom of an epitaxial laser active layer; filling a third LPE reservoir with a liquid material having a composition appropriate for growth therefrom of an epitaxial laser second confining layer; filling a fourth LPE reservoir with a liquid material having a composition appropriate for growth therefrom of an opitaxial laser capping layer; cooling a housing containing the reservoirs at a predetermined rate; moving a boat containing a leading source crystal and a trailing substrate crystal to a first station at which the source crystal underlies the first reservoir for sufficient time to saturate the composition in the first reservoir and to promote epitaxial growth of a first LED confining layer on the source crystal; moving the boat to a second station at which the substrate crystal underlies the first reservoir for sufficient time to promote epitaxial growth thereon of a laser first confining layer and the source crystal underlies the second reservoir and experiences epitaxial growth thereon of a LED active layer; moving the boat to a third station at which the substrate crystal underlies the second reservoir for sufficient time to promote epitaxial growth thereon of a laser active layer and the source crystal underlies the third reservoir and experiences epitaxial growth thereon of an LED second confining layer; moving the boat to a fourth station at which the substrate crystal underlies the third reservoir for sufficient time to promote epitaxial growth thereon of a laser second confining layer and the source crystal underlies the fourth reservoir and experiences epitaxial growth thereon of a LED capping layer; moving the boat to a fifth station at which the substrate crystal underlies the fourth reservoir for sufficient time to promote epitaxial growth thereon of a laser capping layer; and subsequently fabricating light emitting diodes from the source crystal and laser diodes from the substrate crystal.
Claim 2
Dependent Claim
364 words
A process for contemporaneously making double heterostructure light (LZD) emitting diodes and double heterostructure lasers using liquid phase epitaxy comprising: filling a first liquid phase epitaxy (LPE) reservoir with a liquid material having composition appropriate for growth therefrom of an epitaxial laser first confining layer; filling a second LPE reservoir with a liquid material having a composition appropriate for growth therefrom of an epitaxial laser active layer; filling a third LPE reservoir with a liquid material having a composition appropriate for growth therefrom of an epitaxial laser second confining layer; filling a fourth LPE reservoir with a liquid material having a composition appropriate for growth therefrom of an opitaxial laser capping layer; cooling a housing containing the reservoirs at a predetermined rate; moving a boat containing a leading source crystal and a trailing substrate crystal to a first station at which the source crystal underlies the first reservoir for sufficient time to saturate the composition in the first reservoir and to promote epitaxial growth of a first LED confining layer on the source crystal; moving the boat to a second station at which the substrate crystal underlies the first reservoir for sufficient time to promote epitaxial growth thereon of a laser first confining layer and the source crystal underlies the second reservoir and experiences epitaxial growth thereon of a LED active layer; moving the boat to a third station at which the substrate crystal underlies the second reservoir for sufficient time to promote epitaxial growth thereon of a laser active layer and the source crystal underlies the third reservoir and experiences epitaxial growth thereon of an LED second confining layer; moving the boat to a fourth station at which the substrate crystal underlies the third reservoir for sufficient time to promote epitaxial growth thereon of a laser second confining layer and the source crystal underlies the fourth reservoir and experiences epitaxial growth thereon of a LED capping layer; moving the boat to a fifth station at which the substrate crystal underlies the fourth reservoir for sufficient time to promote epitaxial growth thereon of a laser capping layer; and subsequently fabricating light emitting diodes from the source crystal and laser diodes from the substrate crystal.
Claim 3
Dependent Claim
60 words
A process as claimed in claim 1 wherein during a first part of the time that the source crystal underlies the first reservoir, etch back of the source crystal occurs to produce a roughened substrate surface and, during a remaining part of the time that the source crystal underlies the first reservoir, deposition of said first LED confining layer occurs.
Claim 4
Dependent Claim
38 words
A process as claimed in claim 1 wherein the subsequent fabrication of light emitting diodes from the source crystal includes the step of etching to reduce the thickness of the capping layer thereby to reduce internal light absorption.
Claim 5
Dependent Claim
30 words
A process as claimed in claim 1 wherein the subsequent fabrication of laser and light emitting diodes includes the steps of forming top and bottom electrical contacts on the crystal.
Claim 6
Dependent Claim
29 words
A process as claimed in claim 1 in which the subsequent fabrication of laser and light emitting diodes includes the step of cleaving the crystal to produce individual devices.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-08-02 | 1986-02-01 | 1986-08-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-08-02 | 1990-02-01 | 1990-08-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-08-02 | 1994-02-01 | 1994-08-03 | $7700.00 | Window Closed / Lapsed |