US4255755A
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Heterostructure semiconductor device having a top layer etched to form a groove to enable electrical contact with the lower layer
Assignee: Panasonic Holdings Corp
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Filing: 1978-12-13
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Granted: 1981-03-10
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Expires: 1998-12-13
Abstract
Abstract A semiconductor laser is made by sequential liquid-phase epitaxial growths on an n-type GaAs substrate, thereby sequentially forming a first layer of n-type GaAlAs, a second layer of n-type or p-type GaAs as active region, a third layer of p-type GaAlAs, said first to third layers forming a doublehetero structure, a fourth layer of p+-type GaAs, and a fifth layer of n-type GaAlAs, by chemically etching the fifth layer, to form a groove or narrow window therein so as to expose a part of said fourth layer at the bottom of the groove, and by providing a metal electrode embedded in said groove. In the laser of the abovementioned construction, the fifth layer, instead of the conventional oxide film, serves as an isolation layer. However, the fifth layer, being an epitaxially grown GaAlAs layer, has better thermal conductivity than an oxide film. Therefore, when a suitable heat-sink means or heat-radiation means is provided thereon, a laser of good heat radiation characteristics is obtainable, enabling production of higher power continuous wave laser. The etching for forming the groove is easily made by chemically etching the desired layer by utilizing the difference in etching speed for different layers of hetero structure.
Inventors
- 👤 Kunio Itoh
- 👤 Morio Inoue
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 17:50
CPC Classifications
H; H10; H10D; H10D99/00; H10D8/00; H10D8/60; H10H; H10H20/00; H10H20/80; H10P; H10P95/00; H10W; H10W20/00; H10W20/40
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
141 words
A heterostructure multi-layer semiconductor device comprising: an epitaxially grown uppermost semiconductor crystal layer of a given material having one conductivity type; an underlying semiconductor crystal layer of different material lying immediately under said uppermost crystal layer and having a conductivity type opposite to that of said uppermost layer; said uppermost semiconductor crystal layer and said underlying semiconductor crystal layer being epitaxially grown and forming a p-n heterojunction therebetween for electrical isolation; said uppermost semiconductor crystal layer having at least one chemically etched stripe-shaped groove which exposes a part of the upper face of said underlying semiconductor crystal layer; and a metal electrode formed onto the surface of said underlying semiconductor layer exposed by said at least one chemically etched groove in said uppermost semiconductor crystal layer, said metal electrode contacting and extending over the surface of said uppermost semiconductor crystal layer.
Claim 2
Dependent Claim
141 words
A heterostructure multi-layer semiconductor device comprising: an epitaxially grown uppermost semiconductor crystal layer of a given material having one conductivity type; an underlying semiconductor crystal layer of different material lying immediately under said uppermost crystal layer and having a conductivity type opposite to that of said uppermost layer; said uppermost semiconductor crystal layer and said underlying semiconductor crystal layer being epitaxially grown and forming a p-n heterojunction therebetween for electrical isolation; said uppermost semiconductor crystal layer having at least one chemically etched stripe-shaped groove which exposes a part of the upper face of said underlying semiconductor crystal layer; and a metal electrode formed onto the surface of said underlying semiconductor layer exposed by said at least one chemically etched groove in said uppermost semiconductor crystal layer, said metal electrode contacting and extending over the surface of said uppermost semiconductor crystal layer.
Claim 3
Dependent Claim
73 words
The semiconductor device of claim 1 wherein: said device further comprises a binary III-V crystal substrate and a light emitting layer, said light emitting layer being an epitaxial growth region formed on said substrate; said underlying semiconductor crystal layer is an epitaxial growth layer formed on said light emitting layer; and said uppermost semiconductor crystal layer is a ternary III-V crystal formed by replacing a portion of the Ga in GaAs with Al.
Claim 4
Dependent Claim
69 words
The semiconductor device of claim 1 wherein: said device further comprises a substrate of GaAs crystal, a light emitting layer, said light emitting layer being an epitaxial growth region formed on said substrate, an epitaxial growth layer of ternary III-V crystal formed on said light emitting layer; said underlying semiconductor crystal layer being formed on said epitaxial growth layer; and said uppermost semiconductor crystal layer being a GaAlAs crystal.
Claim 5
Dependent Claim
187 words
A semiconductor laser having a double heterostructure comprising: a substrate of binary III-V crystal; a first epitaxial growth layer of ternary III-V crystal formed on said substrate; a second epitaxial growth layer formed on said first growth layer including at least an active region formed of a material from the group consisting of a binary III-V crystal and ternary III-V crystal; a third epitaxial growth layer formed on said second epitaxial growth layer and having one conductivity type; an uppermost epitaxial growth layer formed on said third epitaxial growth layer and having a conductivity type different from that of said third epitaxial growth layer and being electrically isolated from said third epitaxial growth layer by an isolation junction formed therebetween, and having a stripe-shaped groove which exposes said third epitaxial growth layer therethrough; said third epitaxial growth layer and said uppermost epitaxial growth layer being: a binary III-V crystal and a ternary III-V crystal, respectively: a metal electrode formed on the surface of said third epitaxial growth layer exposed by said stripe-shaped groove, said metal electrode contacting extending over the upper surface of said uppermost growth layer.
Claim 6
Dependent Claim
187 words
A semiconductor laser having a double heterostructure comprising: a substrate of binary III-V crystal; a first epitaxial growth layer of ternary III-V crystal formed on said substrate; a second epitaxial growth layer formed on said first growth layer including at least an active region formed of a material from the group consisting of a binary III-V crystal and ternary III-V crystal; a third epitaxial growth layer formed on said second epitaxial growth layer and having one conductivity type; an uppermost epitaxial growth layer formed on said third epitaxial growth layer and having a conductivity type different from that of said third epitaxial growth layer and being electrically isolated from said third epitaxial growth layer by an isolation junction formed therebetween, and having a stripe-shaped groove which exposes said third epitaxial growth layer therethrough; said third epitaxial growth layer and said uppermost epitaxial growth layer being: a binary III-V crystal and a ternary III-V crystal, respectively: a metal electrode formed on the surface of said third epitaxial growth layer exposed by said stripe-shaped groove, said metal electrode contacting extending over the upper surface of said uppermost growth layer.
Claim 7
Dependent Claim
28 words
The semiconductor device of claim 4 wherein: said second epitaxial growth layer includes an additional epitaxial growth layer of a ternary III-V crystal formed on said active region.
Claim 8
Dependent Claim
201 words
A semiconductor laser having a double heterostructure comprising: a substrate of binary III-V crystal; a first epitaxial growth layer formed on said substrate of a ternary III-V crystal; a second epitaxial growth layer formed on said first epitaxial growth layer as an active region, said second epitaxial growth layer from the group consisting of a binary III-V crystal and a ternary III-V crystal; a third epitaxial growth layer of a ternary III-V crystal formed on said second epitaxial growth layer; a fourth epitaxial growth layer formed on said third epitaxial growth layer of a binary III-V crystal having one conductivity type; an uppermost epitaxial growth layer formed on said fourth epitaxial growth layer, said uppermost epitaxial growth layer being a ternary III-V crystal and having a conductivity type different from that of said fourth epitaxial growth layer and being electrically isolated from said fourth epitaxial growth layer by an isolation junction formed therebetween, and having a stripe-shaped groove which exposes said fourth epitaxial growth layer therethrough; and a metal electrode formed onto the surface of said fourth epitaxial growth layer exposed by said stripe-shaped groove, said metal electrode contacting and extending over the upper surface of said uppermost semiconductor crystal layer.
Claim 9
Dependent Claim
201 words
A semiconductor laser having a double heterostructure comprising: a substrate of binary III-V crystal; a first epitaxial growth layer formed on said substrate of a ternary III-V crystal; a second epitaxial growth layer formed on said first epitaxial growth layer as an active region, said second epitaxial growth layer from the group consisting of a binary III-V crystal and a ternary III-V crystal; a third epitaxial growth layer of a ternary III-V crystal formed on said second epitaxial growth layer; a fourth epitaxial growth layer formed on said third epitaxial growth layer of a binary III-V crystal having one conductivity type; an uppermost epitaxial growth layer formed on said fourth epitaxial growth layer, said uppermost epitaxial growth layer being a ternary III-V crystal and having a conductivity type different from that of said fourth epitaxial growth layer and being electrically isolated from said fourth epitaxial growth layer by an isolation junction formed therebetween, and having a stripe-shaped groove which exposes said fourth epitaxial growth layer therethrough; and a metal electrode formed onto the surface of said fourth epitaxial growth layer exposed by said stripe-shaped groove, said metal electrode contacting and extending over the upper surface of said uppermost semiconductor crystal layer.
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| 3.5 Years (Year 4) | 1984-03-09 | 1984-09-08 | 1985-03-10 | $2000.00 | Window Closed / Lapsed |
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