US3798082A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Technique for the fabrication of a pn junction device
Assignee: AT&T Inc
•
Filing: 1972-08-07
•
Granted: 1974-03-19
•
Expires: 1992-08-07
Abstract
Abstract A passivated p-n junction device in which the junction is prevented from rising to the crystallographic surface by the interposition of a semi-insulating layer intermediate the crystallographic surface and the electrical surface is described. The structure is fabricated by forming a semi-insulating layer upon the surface of an n-type Group III(a) - V(a) compound semiconductor, generating a window therein and introducing a ptype material through the window.
Inventors
- 👤 B Schwartz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 10:49
CPC Classifications
H; H10; H10P; H10P95/00; H10P14/00; H10P14/40; H10P14/46; H10W; H10W74/00; H10W74/40; Y; Y10; Y10S; Y10S148/00; Y10S148/065; Y10S438/00; Y10S438/98
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
13 words
Technique in accordance with claim 1 wherein said compound semiconductor is gallium arsenide.
Claim 2
Dependent Claim
13 words
Technique in accordance with claim 1 wherein said compound semiconductor is gallium phosphide.
Claim 3
Dependent Claim
14 words
Technique in accordance with claim 1 wherein said compound semiconductor is gallium arsenide phosphide.
Claim 4
Dependent Claim
13 words
Technique in accordance with claim 1 wherein said p-type dopant is zinc doped.
Claim 5
Dependent Claim
12 words
Technique in accordance with claim 1 wherein said thin film is chromium.
Claim 6
Dependent Claim
19 words
Technique in accordance with claim 6 wherein the thickness of said thin film ranges from 500 to 1,500 A.
Claim 7
Dependent Claim
13 words
Technique in accordance with claim 7 wherein said compound semiconductor is gallium arsenide.
References Cited (Backward Citations)
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US3298879A
Cited
US3392193A
Cited
US3422322A
Cited
US3485684A
Cited
US3490965A
Cited
US3547717A
Cited
US3629018A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-03-18 | 1977-09-17 | 1978-03-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-03-18 | 1981-09-17 | 1982-03-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-03-18 | 1985-09-17 | 1986-03-19 | $7700.00 | Window Closed / Lapsed |