US3245847A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing stable gallium arsenide and semiconductor diodes made therefrom
Assignee: Raytheon Co
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Filing: 1962-11-19
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Granted: 1966-04-12
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Expires: 1982-11-19
Abstract
No abstract record available.
Inventors
- 👤 Frank A Pizzarello
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 13:56
CPC Classifications
H; H10; H10D; H10D99/00; C; C30; C30B; C30B31/00; C30B31/04; H10D62/00; H10D62/80; H10D62/85; H10D62/854; Y; Y10; Y10S; Y10S148/00; Y10S148/037; Y10S148/041; Y10S148/056; Y10S148/065; Y10S252/00; Y10S252/95
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
75 words
THE METHOD OF PRODUCING A STABLE GALLIUM ARSENIDE SEMICONDUCTOR DIODES WHICH COMPRISES: DEGENERATELY DOPING CRYSTALLINE GALLIUM SEMICONDUCTOR MATERIAL WITH A P-TYPE DOPANT OF THE CLASS CONSISTING OF ZINC AND CADMIUM IN THE PRESENCE OF EXCESS ARSENIC AND IN AN ATMOSPHERE OF AT LEAST ONE ATMOSPHERE PRESSURE ARSENIC, AND SUBSEQUENTLY ALLOY BONDING AN N-TYPE DOPANT MATERIAL TO SAID SEMICONDUCTOR MATERIAL TO PRODUCE AN NTYPE ALLOY REGROWN REGION IN THE MATERIAL AND FORM THEREWITH A P-N JUNCTION.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-04-11 | 1969-10-11 | 1970-04-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-04-11 | 1973-10-11 | 1974-04-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-04-11 | 1977-10-11 | 1978-04-12 | $7700.00 | Window Closed / Lapsed |