US4178604A
Expired / Lapsed
US
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Semiconductor laser device
Assignee: Hitachi Ltd
•
Filing: 1977-10-06
•
Granted: 1979-12-11
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Expires: 1997-10-06
Abstract
Abstract A semiconductor laser device comprises an n-type GaAs layer, an n-type GaAlAs layer disposed on the n-type GaAs layer, a laser active layer consisting of a p-type GaAs layer disposed on the n-type GaAlAs layer, a first p-type GaAlAs layer disposed on the laser active layer, the surface of which opposing said laser active layer is a periodically corrugated surface, a second p-type GaAlAs layer disposed on the periodically corrugated surface of the first p-type GaAlAs layer, a p-type GaAs layer disposed on the second p-type GaAlAs layer, and electrodes disposed on the n-type and p-type GaAs layers, respectively, and having a very low threshold value for laser oscillation.
Inventors
- 👤 Michiharu Nakamura
- 👤 Junichi Umeda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 22:28
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/12
Claims Analysis
Total Claims: 118
Claim 1
Independent Claim
127 words
A semiconductor laser device comprising: a semiconductor body of a first conductivity type having a major surface; a laser active semiconductor layer, disposed on said major surface of said body; a first semiconductor layer of a second conductivity type, opposite said first conductivity type, and having a thickness in the range from 500 A to 0.5 μm and an index of refraction lower than that of said laser active layer, disposed on said laser active layer, the surface of said first semiconductor layer opposite that disposed on said laser active layer being corrugated; and a second semiconductor layer of said second conductivity type, disposed on the corrugated surface of said first semiconductor layer and having an index of refraction lower than that of said first semiconductor layer.
Claim 2
Dependent Claim
127 words
A semiconductor laser device comprising: a semiconductor body of a first conductivity type having a major surface; a laser active semiconductor layer, disposed on said major surface of said body; a first semiconductor layer of a second conductivity type, opposite said first conductivity type, and having a thickness in the range from 500 A to 0.5 μm and an index of refraction lower than that of said laser active layer, disposed on said laser active layer, the surface of said first semiconductor layer opposite that disposed on said laser active layer being corrugated; and a second semiconductor layer of said second conductivity type, disposed on the corrugated surface of said first semiconductor layer and having an index of refraction lower than that of said first semiconductor layer.
Claim 3
Dependent Claim
26 words
A semiconductor laser device according to claim 1, wherein the band gap of said first semiconductor layer is broader than that of said laser active layer.
Claim 4
Dependent Claim
26 words
A semiconductor laser device according to claim 2, wherein the band gap of said second semiconductor layer is broader than that of said first semiconductor layer.
Claim 5
Dependent Claim
24 words
A semiconductor laser device according to claim 1, wherein said laser active layer consists of GaAs and said first semiconductor layer consists of GaAlAs.
Claim 6
Dependent Claim
22 words
A semiconductor laser device according to claim 4, wherein said first semiconductor layer consists of Ga 1-x Al x As, wherein 0.1≦×≦0.2.
Claim 7
Dependent Claim
24 words
A semiconductor laser device according to claim 1, further comprising first and second electrodes coupled to said second semiconductor layer and said body, respectively.
Claim 8
Dependent Claim
127 words
A semiconductor laser device comprising: a semiconductor body of a first conductivity type having a major surface; a laser active semiconductor layer, disposed on said major surface of said body; a first semiconductor layer of a second conductivity type, opposite said first conductivity type, and having a thickness in the range from 0.1 μm to 0.3 μm and an index of refraction lower than that of said laser active layer, disposed on said laser active layer, the surface of said first semiconductor layer opposite that disposed on said laser active layer being corrugated; and a second semiconductor layer of said second conductivity type, disposed on the corrugated surface of said first semiconductor layer and having an index of refraction lower than that of said first semiconductor layer.
Claim 9
Dependent Claim
127 words
A semiconductor laser device comprising: a semiconductor body of a first conductivity type having a major surface; a laser active semiconductor layer, disposed on said major surface of said body; a first semiconductor layer of a second conductivity type, opposite said first conductivity type, and having a thickness in the range from 0.1 μm to 0.3 μm and an index of refraction lower than that of said laser active layer, disposed on said laser active layer, the surface of said first semiconductor layer opposite that disposed on said laser active layer being corrugated; and a second semiconductor layer of said second conductivity type, disposed on the corrugated surface of said first semiconductor layer and having an index of refraction lower than that of said first semiconductor layer.
Claim 10
Dependent Claim
26 words
A semiconductor laser device according to claim 7, wherein the band gap of said first semiconductor layer is broader than that of said laser active layer.
Claim 11
Dependent Claim
26 words
A semiconductor laser device according to claim 8, wherein the band gap of said second semiconductor layer is broader than that of said first semiconductor layer.
Claim 12
Dependent Claim
24 words
A semiconductor laser device according to claim 7, wherein said laser active layer consists of GaAs and said first semiconductor layer consists of GaAlAs.
Claim 13
Dependent Claim
22 words
A semiconductor laser device according to claim 10, wherein said first semiconductor layer consists of Ga 1-x Al x As, wherein 0.1≦x≦0.2.
Claim 14
Dependent Claim
24 words
A semiconductor laser device according to claim 7, further comprising first and second electrodes coupled to said second semiconductor layer and said body, respectively.
Claim 15
Dependent Claim
127 words
A semiconductor laser device comprising: a semiconductor body of a first conductivity type having a major surface; a laser active semiconductor layer, disposed on said major surface of said body; a first semiconductor layer of a second conductivity type, opposite said first conductivity type, and having a thickness in the range from 0.2 μm to 0.25 μm and an index of refraction lower than that of said laser active layer, disposed on said laser active layer, the surface of said first semiconductor layer opposite that disposed on said laser active layer being corrugated; and a second semiconductor layer of said second conductivity type, disposed on the corrugated surface of said first semiconductor layer and having an index of refraction lower than that of said first semiconductor layer.
Claim 16
Dependent Claim
127 words
A semiconductor laser device comprising: a semiconductor body of a first conductivity type having a major surface; a laser active semiconductor layer, disposed on said major surface of said body; a first semiconductor layer of a second conductivity type, opposite said first conductivity type, and having a thickness in the range from 0.2 μm to 0.25 μm and an index of refraction lower than that of said laser active layer, disposed on said laser active layer, the surface of said first semiconductor layer opposite that disposed on said laser active layer being corrugated; and a second semiconductor layer of said second conductivity type, disposed on the corrugated surface of said first semiconductor layer and having an index of refraction lower than that of said first semiconductor layer.
Claim 17
Dependent Claim
26 words
A semiconductor laser device according to claim 13, wherein the band gap of said first semiconductor layer is broader than that of said laser active layer.
Claim 18
Dependent Claim
26 words
A semiconductor laser device according to claim 14, wherein the band gap of said second semiconductor layer is broader than that of said first semiconductor layer.
Claim 19
Dependent Claim
24 words
A semiconductor laser device according to claim 13, wherein said laser active layer consists of GaAs and said first semiconductor layer consists of GaAlAs.
Claim 20
Dependent Claim
22 words
A semiconductor laser device according to claim 16, wherein said first semiconductor layer consists of Ga 1-x Al x As, wherein 0.1≦x≦0.2.
Claim 21
Dependent Claim
24 words
A semiconductor laser device according to claim 13, further comprising first and second electrodes coupled to said second semiconductor layer and said body, respectively.
Claim 22
Dependent Claim
155 words
A semiconductor laser device comprising: a semiconductor body of a first conductivity type having a major surface; a first semiconductor layer of said first conductivity type, disposed on said major surface of said body; a laser active semiconductor layer, having an index of refraction higher than that of said first semiconductor layer, disposed on said first semiconductor layer; a second semiconductor layer of a second conductivity type, opposite said first conductivity type and having a thickness in the range from 500 A to 0.5 μm and an index of refraction lower than that of said laser active layer, disposed on said laser active layer, the surface of said second semiconductor layer opposite that disposed on said laser active layer being corrugated; and a third semiconductor layer of said second conductivity type, disposed on the corrugated surface of said second semiconductor layer and having an index of refraction lower than that of said second semiconductor layer.
Claim 23
Dependent Claim
155 words
A semiconductor laser device comprising: a semiconductor body of a first conductivity type having a major surface; a first semiconductor layer of said first conductivity type, disposed on said major surface of said body; a laser active semiconductor layer, having an index of refraction higher than that of said first semiconductor layer, disposed on said first semiconductor layer; a second semiconductor layer of a second conductivity type, opposite said first conductivity type and having a thickness in the range from 500 A to 0.5 μm and an index of refraction lower than that of said laser active layer, disposed on said laser active layer, the surface of said second semiconductor layer opposite that disposed on said laser active layer being corrugated; and a third semiconductor layer of said second conductivity type, disposed on the corrugated surface of said second semiconductor layer and having an index of refraction lower than that of said second semiconductor layer.
Claim 24
Dependent Claim
26 words
A semiconductor laser device according to claim 19, wherein the band gap of said first semiconductor layer is broader than that of said laser active layer.
Claim 25
Dependent Claim
24 words
A semiconductor laser device according to claim 20, wherein said laser active layer consists of GaAs and said second semiconductor layer consists of GaAlAs.
Claim 26
Dependent Claim
22 words
A semiconductor laser device according to claim 21, wherein said second semiconductor layer consists of Ga 1-x Al x As, wherein 0.1≦x≦0.2.
Claim 27
Dependent Claim
155 words
A semiconductor laser device comprising: a semiconductor body of a first conductivity type having a major surface; a first semiconductor layer of said first conductivity type, disposed on said major surface of said body; a laser active semiconductor layer, having an index of refraction higher than that of said first semiconductor layer, disposed on said first semiconductor layer; a second semiconductor layer of a second conductivity type, opposite said first conductivity type and having a thickness in the range from 0.1 μm to 0.3 μm and an index of refraction lower than that of said laser active layer, disposed on said laser active layer, the surface of said second semiconductor layer opposite that disposed on said laser active layer being corrugated; and a third semiconductor layer of said second conductivity type, disposed on the corrugated surface of said second semiconductor layer and having an index of refraction lower than that of said second semiconductor layer.
Claim 28
Dependent Claim
155 words
A semiconductor laser device comprising: a semiconductor body of a first conductivity type having a major surface; a first semiconductor layer of said first conductivity type, disposed on said major surface of said body; a laser active semiconductor layer, having an index of refraction higher than that of said first semiconductor layer, disposed on said first semiconductor layer; a second semiconductor layer of a second conductivity type, opposite said first conductivity type and having a thickness in the range from 0.1 μm to 0.3 μm and an index of refraction lower than that of said laser active layer, disposed on said laser active layer, the surface of said second semiconductor layer opposite that disposed on said laser active layer being corrugated; and a third semiconductor layer of said second conductivity type, disposed on the corrugated surface of said second semiconductor layer and having an index of refraction lower than that of said second semiconductor layer.
Claim 29
Dependent Claim
26 words
A semiconductor laser device according to claim 23, wherein the band gap of said first semiconductor layer is broader than that of said laser active layer.
Claim 30
Dependent Claim
24 words
A semiconductor laser device according to claim 24, wherein said laser active layer consists of GaAs and said second semiconductor layer consists of GaAsAs.
Claim 31
Dependent Claim
22 words
A semiconductor laser device according to claim 25, wherein said second semiconductor layer consists of Ga 1-x Al x As, wherein 0.1≦x≦0.2.
Claim 32
Dependent Claim
155 words
A semiconductor laser device comprising: a semiconductor body of a first conductivity type having a major surface; a first semiconductor layer of said first conductivity type, disposed on said major surface of said body; a laser active semiconductor layer, having an index of refraction higher than that of said first semiconductor layer, disposed on said first semiconductor layer; a second semiconductor layer of a second conductivity type, opposite said first conductivity type and having a thickness in the range from 0.2 μm to 0.25 μm and an index of refraction lower than that of said laser active layer, disposed on said laser active layer, the surface of said second semiconductor layer opposite that disposed on said laser active layer being corrugated; and a third semiconductor layer of said second conductivity type, disposed on the corrugated surface of said second semiconductor layer and having an index of refraction lower than that of said second semiconductor layer.
Claim 33
Dependent Claim
155 words
A semiconductor laser device comprising: a semiconductor body of a first conductivity type having a major surface; a first semiconductor layer of said first conductivity type, disposed on said major surface of said body; a laser active semiconductor layer, having an index of refraction higher than that of said first semiconductor layer, disposed on said first semiconductor layer; a second semiconductor layer of a second conductivity type, opposite said first conductivity type and having a thickness in the range from 0.2 μm to 0.25 μm and an index of refraction lower than that of said laser active layer, disposed on said laser active layer, the surface of said second semiconductor layer opposite that disposed on said laser active layer being corrugated; and a third semiconductor layer of said second conductivity type, disposed on the corrugated surface of said second semiconductor layer and having an index of refraction lower than that of said second semiconductor layer.
Claim 34
Dependent Claim
26 words
A semiconductor laser device according to claim 27, wherein the band gap of said first semiconductor layer is broader than that of said laser active layer.
Claim 35
Dependent Claim
24 words
A semiconductor laser device according to claim 28, wherein said laser active layer consists of GaAs and said second semiconductor layer consists of GaAsAs.
Claim 36
Dependent Claim
22 words
A semiconductor laser device according to claim 29, wherein said second semiconductor layer consists of Ga 1-x Al x As, wherein 0.1≦x≦0.2.
Claim 37
Dependent Claim
184 words
A semiconductor laser device comprising: a semiconductor body of a first conductivity type having a major surface; a first semiconductor layer of said first conductivity type disposed on said major surface of said body; a second semiconductor layer of said first conductivity type, and having an index of refraction higher than that of said first semiconductor layer, disposed on said first semiconductor layer; a laser active semiconductor layer, having an index of refraction higher than that of said second semiconductor layer, disposed on said second semiconductor layer; a third semiconductor layer of a second conductivity type, opposite said first conductivity type, and having a thickness in the range from 500 A to 0.5 μm and an index of refraction lower than that of said laser active layer disposed on said laser active layer, the surface of said third semiconductor layer opposite that disposed on said laser active layer being corrugated; and a fourth semiconductor layer of said second conductivity type, disposed on the corrugated surface of said third semiconductor layer and having an index of refraction lower than that of said third semiconductor layer.
Claim 38
Dependent Claim
184 words
A semiconductor laser device comprising: a semiconductor body of a first conductivity type having a major surface; a first semiconductor layer of said first conductivity type disposed on said major surface of said body; a second semiconductor layer of said first conductivity type, and having an index of refraction higher than that of said first semiconductor layer, disposed on said first semiconductor layer; a laser active semiconductor layer, having an index of refraction higher than that of said second semiconductor layer, disposed on said second semiconductor layer; a third semiconductor layer of a second conductivity type, opposite said first conductivity type, and having a thickness in the range from 500 A to 0.5 μm and an index of refraction lower than that of said laser active layer disposed on said laser active layer, the surface of said third semiconductor layer opposite that disposed on said laser active layer being corrugated; and a fourth semiconductor layer of said second conductivity type, disposed on the corrugated surface of said third semiconductor layer and having an index of refraction lower than that of said third semiconductor layer.
Claim 39
Dependent Claim
25 words
A semiconductor laser device according to claim 31, further including a fifth semiconductor layer of said second conductivity type disposed on said fourth semiconductor layer.
Claim 40
Dependent Claim
26 words
A semiconductor laser device according to claim 32, wherein the band gap of said fourth semiconductor layer is broader than that of said third semiconductor layer.
Claim 41
Dependent Claim
24 words
A semiconductor laser device according to claim 33, wherein said laser active layer consists of GaAs and said third semiconductor layer consists of GaAsAs.
Claim 42
Dependent Claim
22 words
A semiconductor laser device according to claim 34, wherein said third semiconductor layer consists of Ga 1-x Al x As, wherein 0.1≦x≦0.2.
Claim 43
Dependent Claim
184 words
A semiconductor laser device comprising: a semiconductor body of a first conductivity type having a major surface; a first semiconductor layer of said first conductivity type disposed on said major surface of said body; a second semiconductor layer of said first conductivity type, and having an index of refraction higher than that of said first semiconductor layer, disposed on said first semiconductor layer; a laser active semiconductor layer, having an index of refraction higher than that of said second semiconductor layer, disposed on said second semiconductor layer; a third semiconductor layer of a second conductivity type, opposite said first conductivity type, and having a thickness in the range from 0.1 μm and 0.3 μm and an index of refraction lower than that of said laser active layer disposed on said laser active layer, the surface of said third semiconductor layer opposite that disposed on said laser active layer being corrugated; and a fourth semiconductor layer of said second conductivity type, disposed on the corrugated surface of said third semiconductor layer and having an index of refraction lower than that of said third semiconductor layer.
Claim 44
Dependent Claim
184 words
A semiconductor laser device comprising: a semiconductor body of a first conductivity type having a major surface; a first semiconductor layer of said first conductivity type disposed on said major surface of said body; a second semiconductor layer of said first conductivity type, and having an index of refraction higher than that of said first semiconductor layer, disposed on said first semiconductor layer; a laser active semiconductor layer, having an index of refraction higher than that of said second semiconductor layer, disposed on said second semiconductor layer; a third semiconductor layer of a second conductivity type, opposite said first conductivity type, and having a thickness in the range from 0.1 μm and 0.3 μm and an index of refraction lower than that of said laser active layer disposed on said laser active layer, the surface of said third semiconductor layer opposite that disposed on said laser active layer being corrugated; and a fourth semiconductor layer of said second conductivity type, disposed on the corrugated surface of said third semiconductor layer and having an index of refraction lower than that of said third semiconductor layer.
Claim 45
Dependent Claim
25 words
A semiconductor laser device according to claim 36, further including a fifth semiconductor layer of said second conductivity type disposed on said fourth semiconductor layer.
Claim 46
Dependent Claim
26 words
A semiconductor laser device according to claim 37, wherein the band gap of said fourth semiconductor layer is broader than that of said third semiconductor layer.
Claim 47
Dependent Claim
24 words
A semiconductor laser device according to claim 38, wherein said laser active layer consists of GaAs and said third semiconductor layer consists of GaAlAs.
Claim 48
Dependent Claim
23 words
A semiconductor laser device according to claim 39, wherein said third semiconductor layer consists of Ga 1-x Al x As, wherein 0.1 ≦x≦0.2.
Claim 49
Dependent Claim
184 words
A semiconductor laser device comprising: a semiconductor body of a first conductivity type having a major surface; a first semiconductor layer of said first conductivity type disposed on said major surface of said body; a second semiconductor layer of said first conductivity type, and having an index of refraction higher than that of said first semiconductor layer, disposed on said first semiconductor layer; a laser active semiconductor layer, having an index of refraction higher than that of said second semiconductor layer, disposed on said second semiconductor layer; a third semiconductor layer of a second conductivity type, opposite said first conductivity type, and having a thickness in the range from 0.2 μm to 0.25 μm and an index of refraction lower than that of said laser active layer disposed on said laser active layer, the surface of said third semiconductor layer opposite that disposed on said laser active layer being corrugated; and a fourth semiconductor layer of said second conductivity type, disposed on the corrugated surface of said third semiconductor layer and having an index of refraction lower than that of said third semiconductor layer.
Claim 50
Dependent Claim
184 words
A semiconductor laser device comprising: a semiconductor body of a first conductivity type having a major surface; a first semiconductor layer of said first conductivity type disposed on said major surface of said body; a second semiconductor layer of said first conductivity type, and having an index of refraction higher than that of said first semiconductor layer, disposed on said first semiconductor layer; a laser active semiconductor layer, having an index of refraction higher than that of said second semiconductor layer, disposed on said second semiconductor layer; a third semiconductor layer of a second conductivity type, opposite said first conductivity type, and having a thickness in the range from 0.2 μm to 0.25 μm and an index of refraction lower than that of said laser active layer disposed on said laser active layer, the surface of said third semiconductor layer opposite that disposed on said laser active layer being corrugated; and a fourth semiconductor layer of said second conductivity type, disposed on the corrugated surface of said third semiconductor layer and having an index of refraction lower than that of said third semiconductor layer.
Claim 51
Dependent Claim
25 words
A semiconductor laser device according to claim 41, further including a fifth semiconductor layer of said second conductivity type disposed on said fourth semiconductor layer.
Claim 52
Dependent Claim
26 words
A semiconductor laser device according to claim 42, wherein the band gap of said fourth semiconductor layer is broader than that of said third semiconductor layer.
Claim 53
Dependent Claim
24 words
A semiconductor laser device according to claim 43, wherein said laser active layer consists of GaAs and said third semiconductor layer consists of GaAlAs.
Claim 54
Dependent Claim
23 words
A semiconductor laser device according to claim 44, wherein said third semiconductor layer consists of Ga 1-x Al x As, wherein 0.1 ≦x≦0.2.
Claim 55
Dependent Claim
212 words
A semiconductor laser device comprising: a semiconductor body of a first conductivity type having a major surface; a first semiconductor layer of said first conductivity type disposed on the surface of said body; a second semiconductor layer of said first conductivity type and having a thickness in the range from 500 A to 0.5 μm and an index of refraction higher than that of said first semiconductor layer, disposed on said first semiconductor layer, the surface of said second semiconductor layer disposed in contact with said first semiconductor layer being corrugated; a laser active layer having an index of refraction higher than that of said second semiconductor layer, disposed on said second semiconductor layer; a third semiconductor layer of a second conductivity type, opposite said first conductivity type and having a thickness in the range from 500 A to 0.5 μm and an index of refraction lower than that of said laser active layer, disposed on said laser active layer, the surface of said third semiconductor layer opposite that disposed on said laser active layer being corrugated; and a fourth semiconductor layer of said second conductivity type and having an index of refraction lower than that of said third semiconductor layer disposed on the corrugated surface of said said third semiconductor layer.
Claim 56
Dependent Claim
212 words
A semiconductor laser device comprising: a semiconductor body of a first conductivity type having a major surface; a first semiconductor layer of said first conductivity type disposed on the surface of said body; a second semiconductor layer of said first conductivity type and having a thickness in the range from 500 A to 0.5 μm and an index of refraction higher than that of said first semiconductor layer, disposed on said first semiconductor layer, the surface of said second semiconductor layer disposed in contact with said first semiconductor layer being corrugated; a laser active layer having an index of refraction higher than that of said second semiconductor layer, disposed on said second semiconductor layer; a third semiconductor layer of a second conductivity type, opposite said first conductivity type and having a thickness in the range from 500 A to 0.5 μm and an index of refraction lower than that of said laser active layer, disposed on said laser active layer, the surface of said third semiconductor layer opposite that disposed on said laser active layer being corrugated; and a fourth semiconductor layer of said second conductivity type and having an index of refraction lower than that of said third semiconductor layer disposed on the corrugated surface of said said third semiconductor layer.
Claim 57
Dependent Claim
25 words
A semiconductor laser device according to claim 46, further including a fifth semiconductor layer of said second conductivity type disposed on said fourth semiconductor layer.
Claim 58
Dependent Claim
26 words
A semiconductor laser device according to claim 47, wherein the band gap of said first semiconductor layer is broader than that of said fourth semiconductor layer.
Claim 59
Dependent Claim
26 words
A semiconductor laser device according to claim 48, wherein said laser active layer consists of GaAs and said second and third semiconductor layers consist of GaAlAs.
Claim 60
Dependent Claim
24 words
A semiconductor laser device according to claim 49, wherein said second and third semiconductor layers consist of Ga 1-x Al x As, wherein 0.1≦x≦0.2.
Claim 61
Dependent Claim
37 words
A semiconductor laser device according to claim 47, wherein the corrugations are periodic and that between said first and second semiconductor layers is the same as that of the corrugation between said third and fourth semiconductor layers.
Claim 62
Dependent Claim
40 words
A semiconductor laser device according to claim 51, wherein the phase of the periodic corrugation between said first and second semiconductor layers is shifted by 180° relative to that of the periodic corrugation between said third and fourth semiconductor layers.
Claim 63
Dependent Claim
26 words
A semiconductor laser device according to claim 52, wherein said laser active layer consists of GaAs and said second and third semiconductor layers consist of GaAlAs.
Claim 64
Dependent Claim
24 words
A semiconductor laser device according to claim 53, wherein said second and third semiconductor layers consist of Ga 1-x Al x As, wherein 0.1≦x≦0.2.
Claim 65
Dependent Claim
211 words
A semiconductor laser device comprising: a semiconductor body of a first conductivity type having a major surface; a first semiconductor layer of said first conductivity type disposed on the surface of said body; a second semiconductor layer of said first conductivity type and having a thickness in the range from 0.1 μm to 0.3 μm and an index of refraction higher than that of said first semiconductor layer, disposed on said first semiconductor layer, the surface of said second semiconductor layer disposed in contact with said first semiconductor layer being corrugated; a laser active layer having an index of refraction higher than that of said second semiconductor layer, disposed on said second semiconductor layer; a third semiconductor layer of a second conductivity type, opposite said first conductivity type and having a thickness in the range of 0.1 μm to 0.3 μm and an index of refraction lower than that of said laser active layer, disposed on said laser active layer, the surface of said third semiconductor layer opposite that disposed on said laser active layer being corrugated; and a fourth semiconductor layer of said second conductivity type and having an index of refraction lower than that of said third semiconductor layer disposed on the corrugated surface of said third semiconductor layer.
Claim 66
Dependent Claim
211 words
A semiconductor laser device comprising: a semiconductor body of a first conductivity type having a major surface; a first semiconductor layer of said first conductivity type disposed on the surface of said body; a second semiconductor layer of said first conductivity type and having a thickness in the range from 0.1 μm to 0.3 μm and an index of refraction higher than that of said first semiconductor layer, disposed on said first semiconductor layer, the surface of said second semiconductor layer disposed in contact with said first semiconductor layer being corrugated; a laser active layer having an index of refraction higher than that of said second semiconductor layer, disposed on said second semiconductor layer; a third semiconductor layer of a second conductivity type, opposite said first conductivity type and having a thickness in the range of 0.1 μm to 0.3 μm and an index of refraction lower than that of said laser active layer, disposed on said laser active layer, the surface of said third semiconductor layer opposite that disposed on said laser active layer being corrugated; and a fourth semiconductor layer of said second conductivity type and having an index of refraction lower than that of said third semiconductor layer disposed on the corrugated surface of said third semiconductor layer.
Claim 67
Dependent Claim
25 words
A semiconductor laser device according to claim 55, further including a fifth semiconductor layer of said second conductivity type disposed on said fourth semiconductor layer.
Claim 68
Dependent Claim
26 words
A semiconductor laser device according to claim 56, wherein the band gap of said first semiconductor layer is broader than that of said fourth semiconductor layer.
Claim 69
Dependent Claim
26 words
A semiconductor laser device according to claim 57, wherein said laser active layer consists of GaAs and said second and third semiconductor layers consist of GaAlAs.
Claim 70
Dependent Claim
24 words
A semiconductor laser device according to claim 58, wherein said second and third semiconductor layers consist of Ga 1-x Al x As, wherein 0.1≦x≦0.2.
Claim 71
Dependent Claim
37 words
A semiconductor laser device according to claim 56, wherein the corrugations are periodic and that between said first and second semiconductor layers is the same as that of the corrugation between said third and fourth semiconductor layers.
Claim 72
Dependent Claim
40 words
A semiconductor laser device according to claim 60, wherein the phase of the periodic corrugation between said first and second semiconductor layers is shifted by 180° relative to that of the periodic corrugation between said third and fourth semiconductor layers.
Claim 73
Dependent Claim
26 words
A semiconductor laser device according to claim 61, wherein said laser active layer consists of GaAs and said second and third semiconductor layers consist of GaAlAs.
Claim 74
Dependent Claim
24 words
A semiconductor laser device according to claim 62, wherein said second and third semiconductor layers consist of Ga 1-x Al x As, wherein 0.1≦x≦0.2.
Claim 75
Dependent Claim
211 words
A semiconductor laser device comprising: a semiconductor body of a first conductivity type having a major surface; a first semiconductor layer of said first conductivity type disposed on the surface of said body; a second semiconductor layer of said first conductivity type and having a thickness in the range from 0.2 μm to 0.25 μm and an index of refraction higher than that of said first semiconductor layer, disposed on said first semiconductor layer, the surface of said second semiconductor layer disposed in contact with said first semiconductor layer being corrugated; a laser active layer having an index of refraction higher than that of said second semiconductor layer, disposed on said second semiconductor layer; a third semiconductor layer of a second conductivity type, opposite said first conductivity type and having a thickness in the range from 0.2 μm to 0.25 μm and an index of refraction lower than that of said laser active layer, disposed on said laser active layer, the surface of said third semiconductor layer opposite that disposed on said laser active layer being corrugated; and a fourth semiconductor layer of said second conductivity type and having an index of refraction lower than that of said third semiconductor layer disposed on the corrugated surface of said third semiconductor layer.
Claim 76
Dependent Claim
211 words
A semiconductor laser device comprising: a semiconductor body of a first conductivity type having a major surface; a first semiconductor layer of said first conductivity type disposed on the surface of said body; a second semiconductor layer of said first conductivity type and having a thickness in the range from 0.2 μm to 0.25 μm and an index of refraction higher than that of said first semiconductor layer, disposed on said first semiconductor layer, the surface of said second semiconductor layer disposed in contact with said first semiconductor layer being corrugated; a laser active layer having an index of refraction higher than that of said second semiconductor layer, disposed on said second semiconductor layer; a third semiconductor layer of a second conductivity type, opposite said first conductivity type and having a thickness in the range from 0.2 μm to 0.25 μm and an index of refraction lower than that of said laser active layer, disposed on said laser active layer, the surface of said third semiconductor layer opposite that disposed on said laser active layer being corrugated; and a fourth semiconductor layer of said second conductivity type and having an index of refraction lower than that of said third semiconductor layer disposed on the corrugated surface of said third semiconductor layer.
Claim 77
Dependent Claim
25 words
A semiconductor laser device according to claim 64, further including a fifth semiconductor layer of said second conductivity type disposed on said fourth semiconductor layer.
Claim 78
Dependent Claim
26 words
A semiconductor laser device according to claim 65, wherein the band gap of said first semiconductor layer is broader than that of said fourth semiconductor layer.
Claim 79
Dependent Claim
26 words
A semiconductor laser device according to claim 66, wherein said laser active layer consists of GaAs and said second and third semiconductor layers consist of GaAlAs.
Claim 80
Dependent Claim
24 words
A semiconductor laser device according to claim 67, wherein said second and third semiconductor layers consist of Ga 1-x Al x As, wherein 0.1≦x≦0.2.
Claim 81
Dependent Claim
37 words
A semiconductor laser device according to claim 65, wherein the corrugations are periodic and that between said first and second semiconductor layers is the same as that of the corrugation between said third and fourth semiconductor layers.
Claim 82
Dependent Claim
40 words
A semiconductor laser device according to claim 69, wherein the phase of the periodic corrugation between said first and second semiconductor layers is shifted by 180° relative to that of the periodic corrugation between said third and fourth semiconductor layers.
Claim 83
Dependent Claim
26 words
A semiconductor laser device according to claim 70, wherein said laser active layer consists of GaAs and said second and third semiconductor layers consist of GaAlAs.
Claim 84
Dependent Claim
24 words
A semiconductor laser device according to claim 71, wherein said second and third semiconductor layers consist of Ga 1-x Al x As, wherein 0.1≦x≦0.2.
Claim 85
Dependent Claim
160 words
A semiconductor laser device comprising: a semiconductor body of a first conductivity type having a major surface, and a plurality of contiguous semiconductor layers disposed on said major surface of said body, said plurality of contiguous semiconductor layers being comprised of: (i) an optical confinement region having a pair of boundary surfaces and including (a) a laser active semiconductor layer, (b) a first semiconductor layer which has two opposite surfaces, a second conductivity type opposite said first conductivity type, and a band gap broader than that of said laser active layer, and (c) one of said boundary surfaces is one of said two opposite surfaces of said first semiconductor layer, spaced a distance 500A-0.5 μm from said laser active semiconductor layer, and is corrugated; and (ii) a second semiconductor layer of said second conductivity type, disposed on said one boundary surface of said optical confinement region, and having an index of refraction lower than that of said first semiconductor layer.
Claim 86
Dependent Claim
160 words
A semiconductor laser device comprising: a semiconductor body of a first conductivity type having a major surface, and a plurality of contiguous semiconductor layers disposed on said major surface of said body, said plurality of contiguous semiconductor layers being comprised of: (i) an optical confinement region having a pair of boundary surfaces and including (a) a laser active semiconductor layer, (b) a first semiconductor layer which has two opposite surfaces, a second conductivity type opposite said first conductivity type, and a band gap broader than that of said laser active layer, and (c) one of said boundary surfaces is one of said two opposite surfaces of said first semiconductor layer, spaced a distance 500A-0.5 μm from said laser active semiconductor layer, and is corrugated; and (ii) a second semiconductor layer of said second conductivity type, disposed on said one boundary surface of said optical confinement region, and having an index of refraction lower than that of said first semiconductor layer.
Claim 87
Dependent Claim
24 words
A semiconductor layer device according to claim 73, further comprising first and second electrodes coupled to said second semiconductor layer and said body, respectively.
Claim 88
Dependent Claim
34 words
A semiconductor laser device according to claim 73, wherein said plurality of contiguous semiconductor layers is further comprised of a third semiconductor layer of said second conductivity type, disposed on said second semiconductor layer.
Claim 89
Dependent Claim
24 words
A semiconductor laser device according to claim 75, further comprising first and second electrodes coupled to said third semiconductor layer and said body, respectively.
Claim 90
Dependent Claim
15 words
A semiconductor laser device according to claim 75, said third semiconductor layer consisting of GaAs.
Claim 91
Dependent Claim
47 words
A semiconductor layer device according to claim 73, said optical confinement region further having (d) a fourth semiconductor layer, having two opposite surfaces, a band gap broader than that of said laser active layer, said first conductivity type, and being disposed on said laser active semiconductor layer.
Claim 92
Dependent Claim
71 words
A semiconductor laser device according to claim 78, wherein one of said two opposite surfaces of said fourth semiconductor layer is a second boundary surface of said optical confinement region, and wherein said plurality of contiguous semiconductor layers is further comprised of a fifth semiconductor layer of said first conductivity type, disposed on said fourth semiconductor layer, and having an index of refraction lower than that of said fourth semiconductor layer.
Claim 93
Dependent Claim
23 words
A semiconductor layer device according to claim 73, wherein said plurality of contiguous semiconductor layers consist of Ga 1-x Al x As (0≦x<1).
Claim 94
Dependent Claim
17 words
A semiconductor laser device according to claim 80, wherein said laser active semiconductor layer consists of GaAs.
Claim 95
Dependent Claim
21 words
A semiconductor laser device according to claim 80, wherein said first semiconductor layer consists of Ga 1-x Al x As (0.1≦x≦0.2).
Claim 96
Dependent Claim
160 words
A semiconductor laser device comprising: a semiconductor body of a first conductivity type having a major surface, and a plurality of contiguous semiconductor layers disposed on said major surface of said body, said plurality of contiguous semiconductor layers being comprised of: (i) an optical confinement region having a pair of boundary surfaces and including (a) a laser active semiconductor layer, (b) a first semiconductor layer which has two opposite surfaces, a second conductivity type opposite said first conductivity type, and a band gap broader than that of said laser active layer, and (c) one of said boundary surfaces is one of said two opposite surfaces of said first semiconductor layer, spaced a distance 0.1 μm-0.3 μm from said laser active semiconductor layer, and being corrugated; and (ii) a second semiconductor layer of said second conductivity type, disposed on said boundary surface of said optical confinement region, and having an index of refraction lower than that of said first semiconductor layer.
Claim 97
Dependent Claim
160 words
A semiconductor laser device comprising: a semiconductor body of a first conductivity type having a major surface, and a plurality of contiguous semiconductor layers disposed on said major surface of said body, said plurality of contiguous semiconductor layers being comprised of: (i) an optical confinement region having a pair of boundary surfaces and including (a) a laser active semiconductor layer, (b) a first semiconductor layer which has two opposite surfaces, a second conductivity type opposite said first conductivity type, and a band gap broader than that of said laser active layer, and (c) one of said boundary surfaces is one of said two opposite surfaces of said first semiconductor layer, spaced a distance 0.1 μm-0.3 μm from said laser active semiconductor layer, and being corrugated; and (ii) a second semiconductor layer of said second conductivity type, disposed on said boundary surface of said optical confinement region, and having an index of refraction lower than that of said first semiconductor layer.
Claim 98
Dependent Claim
24 words
A semiconductor layer device according to claim 83, further comprising first and second electrodes coupled to said second semiconductor layer and said body, respectively.
Claim 99
Dependent Claim
34 words
A semiconductor layer device according to claim 83, wherein said plurality of contiguous semiconductor layers is further comprised of a third semiconductor layer of said second conductivity type, disposed on said second semiconductor layer.
Claim 100
Dependent Claim
24 words
A semiconductor laser device according to claim 85, further comprising first and second electrodes coupled to said third semiconductor layer and said body, respectively.
Claim 101
Dependent Claim
15 words
A semiconductor laser device according to claim 85, said third semiconductor layer consisting of GaAs.
Claim 102
Dependent Claim
47 words
A semiconductor laser device according to claim 83, said optical confinement region further having (d) a fourth semiconductor layer, having two opposite surfaces, a band gap broader than that of said laser active layer, said first conductivity type, and being disposed on said laser active semiconductor layer.
Claim 103
Dependent Claim
71 words
A semiconductor laser device according to claim 88, wherein one of said two opposite surfaces of said fourth semiconductor layer is a second boundary surface of said optical confinement region, and wherein said plurality of contiguous semiconductor layers is further comprised of a fifth semiconductor layer of said first conductivity type, disposed on said fourth semiconductor layer, and having an index of refraction lower than that of said fourth semiconductor layer.
Claim 104
Dependent Claim
23 words
A semiconductor laser device according to claim 83, wherein said plurality of contiguous semiconductor layers consist of Ga 1-x Al x As (0≦x<1).
Claim 105
Dependent Claim
17 words
A semiconductor laser device according to claim 90, wherein said laser active semiconductor layer consists of GaAs.
Claim 106
Dependent Claim
21 words
A semiconductor laser device according to claim 90, wherein said first semiconductor layer consists of Ga 1-x Al x As (0.1≦x≦0.2).
Claim 107
Dependent Claim
103 words
A semiconductor laser device comprising: a semiconductor body of a first conductivity type having a major surface; and a plurality of contiguous semiconductor layers disposed on the major surface of said body, said plurality of contiguous semiconductor layers being comprised of: a laser active semiconductor layer, a first semiconductor layer having a band gap broader than that of said laser active semiconductor layer, and having a corrugated surface spaced a distance 500A-0.5 μm from said laser active semiconductor layer, and a second semiconductor layer disposed on said corrugated surface, and having a band gap broader than that of said laser active semiconductor layer.
Claim 108
Dependent Claim
103 words
A semiconductor laser device comprising: a semiconductor body of a first conductivity type having a major surface; and a plurality of contiguous semiconductor layers disposed on the major surface of said body, said plurality of contiguous semiconductor layers being comprised of: a laser active semiconductor layer, a first semiconductor layer having a band gap broader than that of said laser active semiconductor layer, and having a corrugated surface spaced a distance 500A-0.5 μm from said laser active semiconductor layer, and a second semiconductor layer disposed on said corrugated surface, and having a band gap broader than that of said laser active semiconductor layer.
Claim 109
Dependent Claim
24 words
A semiconductor laser device according to claim 93, further comprising first and second electrodes coupled to said second semiconductor layer and said body, respectively.
Claim 110
Dependent Claim
23 words
A semiconductor laser device according to claim 93, wherein said plurality of contiguous semiconductor layers consist of Ga 1-x Al x As (0≦x<1).
Claim 111
Dependent Claim
21 words
A semiconductor laser device according to claim 95, wherein said first semiconductor layer consists of Ga 1-x Al x As (0.1≦x≦0.2).
Claim 112
Dependent Claim
25 words
A semiconductor laser device according to claim 93, wherein said first and second semiconductor layers have a second conductivity type, opposite said first conductivity type.
Claim 113
Dependent Claim
104 words
A semiconductor laser device comprising: a semiconductor body of a first conductivity type having a major surface; and a plurality of contiguous semiconductor layers disposed on the major surface of said body, said plurality of contiguous semiconductor layers being comprised of: a laser active semiconductor layer, a first semiconductor layer having a band gap broader than that of said laser active semiconductor layer, and having a corrugated surface spaced a distance 0.1 μm-0.3 μm from said laser active semiconductor layer, and a second semiconductor layer disposed on said corrugated surface, and having a band gap broader than that of said laser active semiconductor layer.
Claim 114
Dependent Claim
104 words
A semiconductor laser device comprising: a semiconductor body of a first conductivity type having a major surface; and a plurality of contiguous semiconductor layers disposed on the major surface of said body, said plurality of contiguous semiconductor layers being comprised of: a laser active semiconductor layer, a first semiconductor layer having a band gap broader than that of said laser active semiconductor layer, and having a corrugated surface spaced a distance 0.1 μm-0.3 μm from said laser active semiconductor layer, and a second semiconductor layer disposed on said corrugated surface, and having a band gap broader than that of said laser active semiconductor layer.
Claim 115
Dependent Claim
24 words
A semiconductor laser device according to claim 98, further comprising first and second electrodes coupled to said second semiconductor layer and said body, respectively.
Claim 116
Dependent Claim
23 words
A semiconductor laser device according to claim 98, wherein said plurality of contiguous semiconductor layers consist of Ga 1-x Al x As (0≦x<1).
Claim 117
Dependent Claim
21 words
A semiconductor laser device according to claim 100, wherein said first semiconductor layer consists of Ga 1-x Al x As (0.1≦x≦0.2).
Claim 118
Dependent Claim
25 words
A semiconductor laser device according to claim 98, wherein said first and second semiconductor layers have a second conductivity type, opposite said first conductivity type.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-12-10 | 1983-06-11 | 1983-12-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-12-10 | 1987-06-11 | 1987-12-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-12-10 | 1991-06-11 | 1991-12-11 | $7700.00 | Window Closed / Lapsed |