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US4301535A
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Programmable read only memory integrated circuit with bit-check and deprogramming modes and methods for programming and testing said circuit
Assignee: STMicroelectronics lnc USA
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Filing: 1979-07-02
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Granted: 1981-11-17
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Expires: 1999-07-02
Abstract
Abstract A programmable read only memory (PROM) integrated circuit is constructed with two new operating modes: a bit-check mode and a deprogramming mode. In the bit-check mode, circuitry is provided to readily determine the apparent threshold voltage of each programmable transistor within the PROM. In the deprogrammable mode, circuitry is provided to simultaneously subject all programmable transistors within the PROM to a deprogramming stress. The bit-check mode provides a rapid programming method, and the bit-check mode and deprogramming mode are utilized in conjunction with each other to provide a rapid and thorough testing method.
Inventors
- 👤 Vernon G. McKenny
- 👤 John K. Hampton
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 23:07
CPC Classifications
G; G11; G11C; G11C29/00; G11C29/04; G11C29/50; G11C16/00; G11C16/02; G11C16/06; G11C16/34; G11C29/08; G11C29/12; G11C29/18; G11C29/30; G11C29/34; G06; G06F; G06F2201/00; G06F2201/81; G11C17/00; G11C17/14; G11C2029/5004
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
57 words
In a programmable digital read only memory integrated circuit having a programmable memory matrix containing a plurality of programmable transistors, the improvement comprising circuit means for coupling a variable voltage to the gate of each programmable transistor and means for detecting if the threshold voltage of each programmable transistor within the programmable memory matrix has been reached.
Claim 2
Dependent Claim
57 words
In a programmable digital read only memory integrated circuit having a programmable memory matrix containing a plurality of programmable transistors, the improvement comprising circuit means for coupling a variable voltage to the gate of each programmable transistor and means for detecting if the threshold voltage of each programmable transistor within the programmable memory matrix has been reached.
Claim 3
Dependent Claim
111 words
A programmable read only memory having a programmable memory matrix containing a plurality of programmable transistors comprising: (a) addressing means connected to the programmable memory matrix for selecting any particular programmable transistor within the programmable memory matrix; (b) circuit means at least partially contained within the addressing means for applying a variable voltage under external control between the control gate and source and drain of the addressed programmable transistor; and (c) circuit means connected to the addressing means for detecting whether or not the channel of the addressed programmable transistor is conductive upon application of the variable voltage, whereby the apparant threshold voltage of the addressed programmable transistor may be determined.
Claim 4
Dependent Claim
111 words
A programmable read only memory having a programmable memory matrix containing a plurality of programmable transistors comprising: (a) addressing means connected to the programmable memory matrix for selecting any particular programmable transistor within the programmable memory matrix; (b) circuit means at least partially contained within the addressing means for applying a variable voltage under external control between the control gate and source and drain of the addressed programmable transistor; and (c) circuit means connected to the addressing means for detecting whether or not the channel of the addressed programmable transistor is conductive upon application of the variable voltage, whereby the apparant threshold voltage of the addressed programmable transistor may be determined.
Claim 5
Dependent Claim
44 words
The circuitry of claim 2 wherein the addressing means is comprised of: (a) a 1-of-N row decoder, where N is the number of rows of the programmable memory matrix; and () a column selector for selecting a particular column from a plurality of columns.
Claim 6
Dependent Claim
28 words
The circuitry of claim 3 wherein the circuit means for detecting whether or not the addressed transistor is conductive is connected to the output of the column selector.
Claim 7
Dependent Claim
30 words
The circuitry of claim 3 wherein the outputs of the 1-of-N row decoder are adapted to receive the variable voltage for application to the control gate of the addressed transistor.
Claim 8
Dependent Claim
51 words
In a programmable read only memory having a programmable memory matrix containing a plurality of programmable transistors, the improvement comprising circuit means coupled to the programmable memory matrix for simultaneously applying a voltage stress between the control gate and source and drain of each programmable transistor within the programmable memory matrix.
Claim 9
Dependent Claim
51 words
In a programmable read only memory having a programmable memory matrix containing a plurality of programmable transistors, the improvement comprising circuit means coupled to the programmable memory matrix for simultaneously applying a voltage stress between the control gate and source and drain of each programmable transistor within the programmable memory matrix.
Claim 10
Dependent Claim
75 words
A programmable read only memory integrated circuit having a programmable memory matrix containing a plurality of transistors comprising: (a) circuit means for simultaneously applying a voltage stress between the control gate and source and drain of each transistor within the programmable memory matrix; and (b) circuit means for preventing current flow, other than leakage current, through the channels of the transistors within the programmable memory matrix during the time that the voltage stress is applied.
Claim 11
Dependent Claim
75 words
A programmable read only memory integrated circuit having a programmable memory matrix containing a plurality of transistors comprising: (a) circuit means for simultaneously applying a voltage stress between the control gate and source and drain of each transistor within the programmable memory matrix; and (b) circuit means for preventing current flow, other than leakage current, through the channels of the transistors within the programmable memory matrix during the time that the voltage stress is applied.
Claim 12
Dependent Claim
50 words
The circuit means of claim 7 wherein the circuit means for simultaneously applying a voltage stress between the gate and source and drain of each transistor within the programmable memory matrix utilizes the outputs of a row decoder for application of the voltage stress to the gates of the transistors.
Claim 13
Independent Claim
93 words
A method of programming a digital programmable read only memory integrated circuit having a memory matrix containing a plurality of programmable transistors, comprising the steps in sequence set forth: (a) programmable at least a portion of the memory matrix of said integrated circuit; (b) coupling a variable voltage to the gate of a programmable transistor; (c) detecting if the apparant threshold of the programmable transistor has been reached; and (d) repeating steps (a), (b) and (c) until a desired apparant threshold voltage result is achieved, but with a predetermined maximum number of attempts.
Claim 14
Independent Claim
93 words
A method of programming a digital programmable read only memory integrated circuit having a memory matrix containing a plurality of programmable transistors, comprising the steps in sequence set forth: (a) programmable at least a portion of the memory matrix of said integrated circuit; (b) coupling a variable voltage to the gate of a programmable transistor; (c) detecting if the apparant threshold of the programmable transistor has been reached; and (d) repeating steps (a), (b) and (c) until a desired apparant threshold voltage result is achieved, but with a predetermined maximum number of attempts.
Claim 15
Independent Claim
85 words
A method of testing a programmable read only memory integrated circuit having a memory matrix of transistors, comprising the steps in the sequence set forth: (a) programming at least a portion of the transistors of the memory matrix of said integrated circuit; (b) applying a voltage stress simultaneously to the transistors which comprises the portion of the memory matrix which has been programmed; and (c) determining the apparent threshold voltage of the transistors which comprise the portion of the memory matrix which has been programmed.
Claim 16
Independent Claim
85 words
A method of testing a programmable read only memory integrated circuit having a memory matrix of transistors, comprising the steps in the sequence set forth: (a) programming at least a portion of the transistors of the memory matrix of said integrated circuit; (b) applying a voltage stress simultaneously to the transistors which comprises the portion of the memory matrix which has been programmed; and (c) determining the apparent threshold voltage of the transistors which comprise the portion of the memory matrix which has been programmed.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-11-16 | 1985-05-18 | 1985-11-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-11-16 | 1989-05-18 | 1989-11-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-11-16 | 1993-05-18 | 1993-11-17 | $7700.00 | Window Closed / Lapsed |