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Patent US4300960A successfully refreshed from Google Patents.
US4300960A
Expired / Lapsed
US
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Method of making a light emitting diode
Assignee: Panasonic Holdings Corp
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Filing: 1980-03-18
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Granted: 1981-11-17
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Expires: 2000-03-18
Abstract
Abstract A method of making a light emitting diode by a liquid phase epitaxial growth is disclosed, the method comprising the steps of growing a first p-type epitaxial layer from a gallium melt containing Zn, and Ga 2 O 3 and GaP on an n-type GaP substrate, or on an n-type epitaxial layer formed on an n-type GaP substrate, at a cooling rate greater than 3° C./min., and growing a second p-type epitaxial layer from the gallium melt on the first p-type epitaxial layer at a cooling rate less than 1.5° C./min. This procedure makes the p-type carrier density high at the surface region of the second p-type epitaxial layer and the density of Zn-O pairs high in the first p-type epitaxial layer.
Inventors
- 👤 Susumu Koike
- 👤 Hitoo Iwasa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 04:49
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/265; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3218; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10P14/3446; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/915
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
80 words
A method of making a light emitting diode using a liquid phase epitaxial method comprising the steps of, (a) growing a first p-type epitaxial layer from a gallium melt containing Zn, Ga 2 O 3 and GaP on an n-type GaP substrate at a cooling rate greater than 3° C. per minute, and (b) growing a second p-type epitaxial layer from said gallium melt on said first p-type epitaxial layer at a cooling rate less than 1.5° C. per minute.
Claim 2
Independent Claim
80 words
A method of making a light emitting diode using a liquid phase epitaxial method comprising the steps of, (a) growing a first p-type epitaxial layer from a gallium melt containing Zn, Ga 2 O 3 and GaP on an n-type GaP substrate at a cooling rate greater than 3° C. per minute, and (b) growing a second p-type epitaxial layer from said gallium melt on said first p-type epitaxial layer at a cooling rate less than 1.5° C. per minute.
Claim 3
Dependent Claim
42 words
A method of making a light emitting diode in accordance with claim 1, wherein the growth of said second p-type epitaxial layer of step (b) is started immediately after the growth of said first p-type epitaxial layer of step (a) has stopped.
Claim 4
Dependent Claim
45 words
A method of making a light emitting diode in accordance with claim 1, including the further step of (c) heating and melting said gallium melt after the growth of said first p-type epitaxial layer and prior to the growth of said second p-type epitaxial layer.
Claim 5
Dependent Claim
51 words
A method of making a light emitting diode in accordance with claim 2 or 3, wherein the p-type carrier density at the surface of said second p-type epitaxial layer is higher than the p-type carrier density at the interface between said first p-type epitaxial layer and said second p-type epitaxial layer.
Claim 6
Independent Claim
86 words
A method of making a light emitting diode using a liquid phase epitaxial method comprising the steps of: (a) growing a first p-type epitaxial layer at a cooling rate greater than 3° C. per minute from a gallium melt containing Zn, Ga 2 O 3 and GaP on an n-type epitaxial layer formed on an n-type GaP substrate, and (b) growing a second p-type epitaxial layer from said gallium melt on said first p-type epitaxial layer at a cooling rate less than 1.5° C. per minute.
Claim 7
Independent Claim
86 words
A method of making a light emitting diode using a liquid phase epitaxial method comprising the steps of: (a) growing a first p-type epitaxial layer at a cooling rate greater than 3° C. per minute from a gallium melt containing Zn, Ga 2 O 3 and GaP on an n-type epitaxial layer formed on an n-type GaP substrate, and (b) growing a second p-type epitaxial layer from said gallium melt on said first p-type epitaxial layer at a cooling rate less than 1.5° C. per minute.
Claim 8
Dependent Claim
42 words
A method of making a light emitting diode in accordance with claim 5, wherein the growth of said second p-type epitaxial layer of step (b) is started immediately after the growth of said first p-type epitaxial layer of step (a) has stopped.
Claim 9
Dependent Claim
45 words
A method of making a light emitting diode in accordance with claim 5, including the first step of (c) heating and melting said gallium melt after the growth of said first p-type epixtaxial layer and prior to the growth of said second p-type epitaxial layer.
Claim 10
Dependent Claim
51 words
A method of making a light emitting diode in accordance with claim 6 or 7, wherein the p-type carrier density at the surface of said second p-type epitaxial layer is higher than the p-type carrier density at the interface between said first p-type epitaxial layer and said second p-type epitaxial layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-11-16 | 1985-05-18 | 1985-11-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-11-16 | 1989-05-18 | 1989-11-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-11-16 | 1993-05-18 | 1993-11-17 | $7700.00 | Window Closed / Lapsed |