US4180423A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing red light-emitting gallium phosphide device
Assignee: Toshiba Corp
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Filing: 1976-08-24
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Granted: 1979-12-25
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Expires: 1996-08-24
Abstract
Abstract A red light-emitting gallium phosphide device of high electroluminescent efficiency which comprises an n-type gallium phosphide substrate containing a donor at concentrations ranging from 1×10 17 cm -3 to 3×10 17 cm -3 , an n-type gallium phosphide layer formed on said substrate with a donor concentration in the neighborhood of a p-n junction set at a level ranging from 2×10 17 cm -3 to 5.5×10 17 cm -3 and a p-type gallium phosphide layer grown on said n-type gallium phosphide layer with a net acceptor concentration and an oxygen donor concentration in the neighborhood of the p-n junction chosen to range from 1×10 17 cm -3 to 3×10 17 cm -3 and 0.1×10 16 cm -3 to 8×10 16 cm -3 , respectively.
Inventors
- 👤 Makoto Naito
- 👤 Akinobu Kasami
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 04:45
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/8242; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/265; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3218; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
117 words
A method of manufacturing a red light-emitting gallium phosphide device comprising the steps of forming by liquid phase epitaxial growth an n-type gallium phosphide layer whose donor concentration at the p-n junction ranges between 2×10 17 cm -3 and 5.5×10 17 cm -3 on an n-type gallium phosphide substrate whose donor concentration ranges between 1×10 17 cm -3 and 3×10 17 cm -3 : and forming by liquid phase epitaxial growth of a cooling rate ranging between 0.2° and 3° C./min. a p-type gallium phosphide layer whose net acceptor concentration ranges between 1×10 17 cm -3 and 3×10 17 cm -3 in the portion at a distance of not more than 20 microns from the p-n junction.
Claim 2
Independent Claim
117 words
A method of manufacturing a red light-emitting gallium phosphide device comprising the steps of forming by liquid phase epitaxial growth an n-type gallium phosphide layer whose donor concentration at the p-n junction ranges between 2×10 17 cm -3 and 5.5×10 17 cm -3 on an n-type gallium phosphide substrate whose donor concentration ranges between 1×10 17 cm -3 and 3×10 17 cm -3 : and forming by liquid phase epitaxial growth of a cooling rate ranging between 0.2° and 3° C./min. a p-type gallium phosphide layer whose net acceptor concentration ranges between 1×10 17 cm -3 and 3×10 17 cm -3 in the portion at a distance of not more than 20 microns from the p-n junction.
Claim 3
Dependent Claim
37 words
A method of manufacturing a red light-emitting gallium phosphide device according to claim 1 wherein the n-type gallium phosphide layer is formed by liquid phase epitaxial growth of a cooling rate ranging between 0.2° and 3° C./min.
Claim 4
Dependent Claim
50 words
A method of manufacturing a red light-emitting gallium phosphide device according to claim 1 wherein the liquid phase epitaxial growth is made at a cooling rate of 0.2° to 3° C./min until 900° C. from more than 1000° C. and then at a cooling rate of more than 3° C./min.
Claim 5
Dependent Claim
48 words
A method of manufacturing a red light-emitting gallium phosphide device according to claim 1, wherein the donor concentration N D of the n-type gallium phosphide layer and the acceptor concentration N A in the p-type gallium phosphide layer have a relationship expressed by the formula: 4N.sub.A ≧N.sub.D ≧1.5N.sub.A.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-12-24 | 1983-06-25 | 1983-12-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-12-24 | 1987-06-25 | 1987-12-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-12-24 | 1991-06-25 | 1991-12-25 | $7700.00 | Window Closed / Lapsed |