US3951699A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a gallium phosphide red-emitting device
Assignee: Toshiba Corp
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Filing: 1974-02-06
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Granted: 1976-04-20
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Expires: 1994-02-06
Abstract
Abstract A method of manufacturing a gallium phosphide (GaP) red-emitting device by forming at least one n-type GaP layer on an n-type GaP substrate by the liquid phase epitaxial growth process and further depositing a p-type GaP layer on said n-type GaP layer, thereby providing a p-n junction contributing to emission of light, characterized in that the method comprises reducing the surface donor concentration of the n-type GaP layer to below 1 x 1018 cm<->3; and epitaxially growing at least the light emitting region of the p-type GaP layer by cooling a solution for epitaxial growth of said p-type GaP layer at a slower rate than 5 DEG C per minute.
Inventors
- 👤 Makoto Naito
- 👤 Akinobu Kasami
- 👤 Masaru Kawachi
- 👤 Tetsuo Sadamasa
- 👤 Hiroki Mineo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 12:52
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
110 words
A method of manufacturing a gallium phosphide red light emitting device comprising the steps of preparing an n-type gallium phosphide substrate; expitxally growing an n-type gallium phosphide layer in liquid phase on the substrate to impart to one surface of the layer a donor concentration of less than 1 × 10 18 cm.sup. -3 ; and forming a p-type gallium phosphide layer on said surface of the n-type layer, at least the light emitting region of the p-type gallium phosphide layer formed by liquid-phase epitaxial growth, and cooling at a rate of less than 5° C/min so as to enhance the crystallinity of the p-type layer near the p-n junction.
Claim 2
Independent Claim
110 words
A method of manufacturing a gallium phosphide red light emitting device comprising the steps of preparing an n-type gallium phosphide substrate; expitxally growing an n-type gallium phosphide layer in liquid phase on the substrate to impart to one surface of the layer a donor concentration of less than 1 × 10 18 cm.sup. -3 ; and forming a p-type gallium phosphide layer on said surface of the n-type layer, at least the light emitting region of the p-type gallium phosphide layer formed by liquid-phase epitaxial growth, and cooling at a rate of less than 5° C/min so as to enhance the crystallinity of the p-type layer near the p-n junction.
Claim 3
Independent Claim
122 words
A method of manufacturing a gallium phosphide red light emitting device comprising the steps of preparing an n-type gallium phosphide substrate; epitaxially growing an n-type gallium phosphide layer in liquid phase on the substrate to impart to one surface of the layer of a donor concentration of less than 1 × 10 18 cm.sup. -3 ; and forming a p-type gallium phosphide layer doped with zinc and oxygen on said surface of the n-type layer, at least the light emitting region of the p-type gallium phosphide layer formed by liquid phase epitaxial growth, and cooling at a rate of less than 5° C/min, so as to form a non-irregular crystal portion in the p-type layer near said surface of the n-type layer.
Claim 4
Independent Claim
122 words
A method of manufacturing a gallium phosphide red light emitting device comprising the steps of preparing an n-type gallium phosphide substrate; epitaxially growing an n-type gallium phosphide layer in liquid phase on the substrate to impart to one surface of the layer of a donor concentration of less than 1 × 10 18 cm.sup. -3 ; and forming a p-type gallium phosphide layer doped with zinc and oxygen on said surface of the n-type layer, at least the light emitting region of the p-type gallium phosphide layer formed by liquid phase epitaxial growth, and cooling at a rate of less than 5° C/min, so as to form a non-irregular crystal portion in the p-type layer near said surface of the n-type layer.
Claim 5
Dependent Claim
27 words
A method of claim 2, wherein the substrate, the n-type layer, and the p-type layer are heated at a temperature of from 450° C to 600° C.
Claim 6
Dependent Claim
26 words
A method of claim 1, wherein the substrate, and the n-type layer are doped with tellurium, and the p-type layer is doped with zinc and oxygen.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-04-20 | 1979-10-20 | 1980-04-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-04-20 | 1983-10-20 | 1984-04-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-04-20 | 1987-10-20 | 1988-04-20 | $7700.00 | Window Closed / Lapsed |