Patent US4283236A successfully refreshed from Google Patents.
US4283236A
Expired / Lapsed
US
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Method of fabricating lateral PNP transistors utilizing selective diffusion and counter doping
Assignee: Intersil Corp
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Filing: 1979-09-19
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Granted: 1981-08-11
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Expires: 1999-09-19
Abstract
Abstract A lateral PNP transistor is formed by diffusing N type inpurities into an N type layer to form base contact region and base region, diffusing P type impurities into the N base region and N layer to form emitter and collector regions respectively, and counter doping the layer area between the N base region and the collector region. The counter doping is performed through a non-critical mask aperture extending between the emitter and collector regions.
Inventors
- 👤 Ramesh M. Sirsi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 14:06
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D10/00; H10D10/60; H10P30/21; H10P30/212; H10P32/00; H10P32/10; H10P32/14; H10P32/1404; H10P32/1406; H10P32/17; H10P32/171
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
109 words
A method of fabricating lateral PNP transistors comprising: introducing N type impurities into a low impurity concentration N type base region to form high impurity concentration N type base and base contact regions; introducing P type impurities into said low impurity concentration base region to form P type collector region and into said high impurity concentration base region to form P type emitter region; and introducing P type impurities into the region between said collector and emitter regions of sufficient concentration to counter dope the low impurity concentration base region between said collector region and said high impurity concentration base region without converting said high impurity concentration base region.
Claim 2
Independent Claim
109 words
A method of fabricating lateral PNP transistors comprising: introducing N type impurities into a low impurity concentration N type base region to form high impurity concentration N type base and base contact regions; introducing P type impurities into said low impurity concentration base region to form P type collector region and into said high impurity concentration base region to form P type emitter region; and introducing P type impurities into the region between said collector and emitter regions of sufficient concentration to counter dope the low impurity concentration base region between said collector region and said high impurity concentration base region without converting said high impurity concentration base region.
Claim 3
Dependent Claim
43 words
The method according to claim 1 wherein said P type impurities of the last mentioned step are introduced through a noncritical mask having an aperture over said base regions between said collector and emitter regions and portions of said collector and emitter regions.
Claim 4
Dependent Claim
39 words
The method according to claim 1 including forming a thick oxide layer on said low impurity concentration base region having base contact, emitter and collector region apertures in said thick layer, and subsequently introducing said impurities through said apertures.
Claim 5
Dependent Claim
35 words
The method according to claim 3 wherein said N type impurities are introduced through said base contact and emitter apertures, and said first mentioned P type impurities are introduced through said emitter and collector apertures.
Claim 6
Dependent Claim
30 words
The method according to claim 4 including removing portions of said thick oxide layer between said emitter and collector apertures between said first and second P type impurity introducing steps.
Claim 7
Dependent Claim
41 words
The method according to claim 3 wherein said apertures have thin oxide regions compared to said thick oxide layer and said impurities are introduced by ion implantation through said thin oxide regions with said thick oxide layer forming an implantation mask.
Claim 8
Independent Claim
129 words
A method of fabricating lateral PNP transistors comprising: forming a mask layer on an N type with base contact, emitter and collector apertures in said mask layer; introducing N type impurities through said base contact and emitter apertures to form a base contact region and base region of higher impurity concentration than said layer; introducing P type impurities through said emitter and collector apertures to form an emitter region in said base region and collector region in said layer; removing portion of said mask layer between said emitter and collector apertures; and introducing P type impurties into the region between said emitter and collector regions of sufficient concentration to counter dope the portion of said layer between said collector region and said base region without converting said base region.
Claim 9
Independent Claim
129 words
A method of fabricating lateral PNP transistors comprising: forming a mask layer on an N type with base contact, emitter and collector apertures in said mask layer; introducing N type impurities through said base contact and emitter apertures to form a base contact region and base region of higher impurity concentration than said layer; introducing P type impurities through said emitter and collector apertures to form an emitter region in said base region and collector region in said layer; removing portion of said mask layer between said emitter and collector apertures; and introducing P type impurties into the region between said emitter and collector regions of sufficient concentration to counter dope the portion of said layer between said collector region and said base region without converting said base region.
Claim 10
Dependent Claim
42 words
The method according to claim 7 wherein said impurities are introduced by ion implantation; and said collector aperture is masked during said N type impurity ion implantation and said base contact aperture is masked during the first P type impurity ion implantation.
Claim 11
Dependent Claim
24 words
The method according to claim 8 wherein the base contact, emitter and collector apertures are exposed during the second P type impurity ion implantation.
Claim 12
Dependent Claim
17 words
The method according to claim 9 wherein said apertures are masked by metal formed in said apertures.
Claim 13
Dependent Claim
54 words
The method according to claim 10 wherein forming said mask layer includes forming a thin oxide layer on said N type layer, forming oxidation inhibiting mask on said thin oxide layer to define said apertures and oxidizing said exposed thin oxide layer to form a thick oxide layer with thin oxide in said apertures.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-08-10 | 1985-02-09 | 1985-08-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-08-10 | 1989-02-09 | 1989-08-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-08-10 | 1993-02-09 | 1993-08-11 | $7700.00 | Window Closed / Lapsed |