Double-diffused, lateral transistor structure

Claim 2

A semiconductor device fabricated from semiconductor material having one surface which is substantially flat and having overlying insulating material, comprising: a base region formed in a first portion of said semiconductor material adjacent said surface, said base region having a graded impurity concentration; a collector region formed in a second portion of said semiconductor material adjacent said surface, said second portion being adjacent said first portion in lateral relationship along said surface so that a collector-base junction is formed therebetween; an emitter region formed in a third portion of said semiconductor material, said third portion being spaced from said second portion in lateral relationship along said surface; a remote base region surrounding said emitter region thereby isolating said emitter region from said collector region and forming an emitter-base junction; means to electrically contact said base, collector and emitter regions through said insulating material; and a buried conducting channel electrically communicating said base region with said remote base region.

Claim 3

A semiconductor device in accordance with claim 1 wherein said base region is of N- conductivity type, said collector region is of P- conductivity type, said emitter region is of P+ conductivity type, said remote base region is of N-conductivity type and said conducting channel is of N+ conductivity type.

Claim 4

A double-diffused, complementary lateral transistor fabricated from semiconductor material having one surface which is substantially flat, comprising: a layer of insulation material overlaying selected portions of said surface; a collector region of p-conductivity type formed in a first portion of said semiconductor material; an emitter region of p -conductivity type formed in a second portion of said semiconductor material and extending under an edge of said layer of insulation material with said emitter region being laterally spaced from said collector region; a base region of n -conductivity type separating sdaid emitter region from said collector region, said base region having a graded impurity concentration; means for making electrical communication with said emitter, collector and base regIons, said means for making electrical communication with said base region comprising a conducting channel which contacts said base region within said semiconductor material and which provides electrical communication with said surface at a location separated from said collector, emitter and base regions; an additional region of p -conductivity type formed in said semiconductor material adjacent said collector region; and a further region of n -conductivity type formed in said semiconductor material adjacent said additional region and contacting said surface.

Claim 5

A double-diffused, complementary lateral transistor fabricated from semiconductor material having one surface which is substantially flat, comprising: a layer of insulation material overlaying selected portions of said surface; a collector region of p-conductivity type formed in a first portion of said semiconductor material; an emitter region of p -conductivity type formed in a second portion of said semiconductor material and extending under an edge of said layer of insulation material with said emitter region being laterally spaced from said collector region; a base region of n -conductivity type separating sdaid emitter region from said collector region, said base region having a graded impurity concentration; means for making electrical communication with said emitter, collector and base regIons, said means for making electrical communication with said base region comprising a conducting channel which contacts said base region within said semiconductor material and which provides electrical communication with said surface at a location separated from said collector, emitter and base regions; an additional region of p -conductivity type formed in said semiconductor material adjacent said collector region; and a further region of n -conductivity type formed in said semiconductor material adjacent said additional region and contacting said surface.

Claim 6

A double-diffused, complementary lateral transistor structure having NPN and PNP transistors with the base of the PNP transistor being common with the collector of the NPN transistor and being fabricated from a semiconductor material having one surface which is substantially flat, comprising: a layer of insulation material overlying selected portions of said surface; a first collector region of p -conductivity type formed in a first portion of said semiconductor material and extending under an edge of said layer of insulation material with said emitter region being laterally spaced from said collector region; a first emitter region of p -conductivity type formed in a second portion of said semiconductor material and extending under an edge of said layer of insulation material with said emitter region being laterally spaced from said collector region; a first base region of n -conductivity type separating said first emitter region from said first collector region, said first base region having a graded impurity concentration; a second base region formed in the same p-type region of semiconductor material as said first collector region; a second emitter region of n -conductivity type formed in said second base region and extending to said one surface; a second collector region of n -conductivity type adjacent both said first and second base regions, said second collector region being of the same conductivity type and more heavily doped than said first base region; means for making electrical contact with said first and second emitter regions of opposite conductivity type through openings in said insulation layer on said one surface; and means for making electrical communication with said first base region and said second collector region comprising a conducting channel which makes contact with said regions within said semiconductor material and which provides electrical communication at said one surface at a location separated from said regions.

Claim 7

A double-diffused, complementary lateral transistor structure having NPN and PNP transistors with the base of the PNP transistor being common with the collector of the NPN transistor and being fabricated from a semiconductor material having one surface which is substantially flat, comprising: a layer of insulation material overlying selected portions of said surface; a first collector region of p -conductivity type formed in a first portion of said semiconductor material and extending under an edge of said layer of insulation material with said emitter region being laterally spaced from said collector region; a first emitter region of p -conductivity type formed in a second portion of said semiconductor material and extending under an edge of said layer of insulation material with said emitter region being laterally spaced from said collector region; a first base region of n -conductivity type separating said first emitter region from said first collector region, said first base region having a graded impurity concentration; a second base region formed in the same p-type region of semiconductor material as said first collector region; a second emitter region of n -conductivity type formed in said second base region and extending to said one surface; a second collector region of n -conductivity type adjacent both said first and second base regions, said second collector region being of the same conductivity type and more heavily doped than said first base region; means for making electrical contact with said first and second emitter regions of opposite conductivity type through openings in said insulation layer on said one surface; and means for making electrical communication with said first base region and said second collector region comprising a conducting channel which makes contact with said regions within said semiconductor material and which provides electrical communication at said one surface at a location separated from said regions.