Semiconductor devices having at least four regions of alternately different conductance type

Abstract

Abstract DESCRIBED IS A SEMICONDUCTOR DEVICE HAVING AT LEAST FOUR REGIONS OF ALTERNATELY DIFFERENT CONDUCTANCE TYPE AND COMPRISING A FLAT PLATE-SHAPED BODY OF CRYSTALLINE SEMICONDUCTOR MATERIAL. THE MAIN PORTION OF THE BODY HAS A FIRST TYPE OF CONDUCTANCE FORMING ONE FLAT SURFACE OF THE PLATE. TWO DIFFUSION-DOPED SURFACE REGIONS OF THE OPPOSED CONDUCTANCE TYPE AS LOCATED IN THE BODY AT THE OTHER FLAT SURFACE OF THE PLATE AND COVER RESPECTIVE SURFACE AREAS OF SMALLER SIZE THAN, POSITIONED WITHIN, THE OTHER PLATE SURFACE. THESE TWO REGIONS FORMING RESPECTIVE P-N JUNCTIONS WITH THE MAIN PORTION AND BEING SPACED FROM EACH OTHER BY PART OF THE MAIN PORTION A DISTANCE NOT LARGER THAN FIVE TIMES THE MEDIAN DIFFUSION LENGTH OF THE MINORITY CHARGE CARRIERS IN THE MAIN PORTION. ANOTHER REGIONS, HAVING THE SAME CONDUCTANCE TYPE AS THE MAIN PORTION AND HAVING SMALLER DIMENSIONS THAN ONE OF THE TWO OPPOSEDTYPE CONDUCTANCE REGIONS, LOCATED AT THE TOHER PLATE SURFACE AND SURROUNDED BY ONE REGION TO FORM A THIRD P-N JUNCTION THEREWITH. THE SHORTEST DISTANCE OF THE OTHER REGION FROM THE MAIN PORTION BEING NO LARGER THAN THE MEDIAN DIFFUSION LENGTH OF THE MINORITY CHARGE CARRIERS IN THE ONE REGION. THE BODY MAY BE SILICON.

Inventors

• 👤 H Dorendorf

Bibliographic Details