Integrated logic elements with improved speed-power characteristics

Claim 1

In a monolithic semiconductor circuit comprising a semiconductor body of a first conductivity type, a pair of mutually spaced regions in said body and each of a second conductivity type, said regions constituting respectively the emitter and collector regions of a lateral transistor, said collector region having therewithin a region of said first conductivity type constituting the collector of an inversely operated vertical transistor, said collector region of said lateral transistor constituting the base region of said vertical transistor, said semiconductor body constituting the base region of said lateral transistor and the emitter region of said vertical transistor, said collector and base regions of said vertical transistor having therebetween a collector base P-N junction, said base and emitter regions of said vertical transistor having therebetween a base-emitter P-N junction, conductive means for reverse biasing said collectorbase junction and forward biasing said base-emitter junction, conductive means for receiving a control signal at the base of said vertical transistor, wherein the improvement comprises a shunt resistive means connected between said collector and said emitter of said lateral transistor for increasing the switching speed of said circuit.