Patent US4265935A successfully refreshed from Google Patents.
US4265935A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High temperature refractory metal contact assembly and multiple layer interconnect structure
Assignee: Micro Power Systems Inc
•
Filing: 1979-02-22
•
Granted: 1981-05-05
•
Expires: 1999-02-22
Abstract
Abstract A multi-layer integrated semiconductor circuit interconnection structure with a first layer formed of a refractory metal sandwich including outer layers of silicon and a core of refractory metal providing a high temperature low ohmic contact assembly, an insulating layer formed on the first layer, and a patterned metal layer formed on the insulating layer to interconnect with the refractory layer and semiconductor device to provide an integrated circuit assembly.
Inventors
- 👤 John H. Hall
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:36
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441; H10W20/01; H10W20/031; H10W20/064; H10W20/066; Y; Y10; Y10S; Y10S148/00; Y10S148/147
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
50 words
A method for forming an integrated circuit structure comprising the steps of: providing a silicon body having a surface, forming a first insulating layer on at least a portion of the surface of the silicon body, forming a refractory metal sandwich at least over a portion of said insulating layer,
Claim 2
Independent Claim
50 words
A method for forming an integrated circuit structure comprising the steps of: providing a silicon body having a surface, forming a first insulating layer on at least a portion of the surface of the silicon body, forming a refractory metal sandwich at least over a portion of said insulating layer,
Claim 3
Dependent Claim
40 words
formation of said sandwich including solely the steps of forming a first layer of silicon, and forming a refractory metal layer on the silicon layer and forming a second silicon layer on the upper surface of the refractory metal layer.
Claim 4
Dependent Claim
40 words
formation of said sandwich including solely the steps of forming a first layer of silicon, and forming a refractory metal layer on the silicon layer and forming a second silicon layer on the upper surface of the refractory metal layer.
Claim 5
Independent Claim
107 words
A method for forming an integrated circuit interconnection structure comprising the steps of: providing a silicon body having a surface, forming a first insulating layer having at least one aperture on the surface to expose portions of the surface of said silicon body, forming a refractory metal sandwich on the upper surface of the insulating layer and on the exposed body portion, formation of said sandwich including solely the steps of forming a silicon layer on a body portion and on the insulating layer, forming a refractory metal layer on the silicon layer and forming a second layer on the upper surface of the refractory metal layer.
Claim 6
Independent Claim
107 words
A method for forming an integrated circuit interconnection structure comprising the steps of: providing a silicon body having a surface, forming a first insulating layer having at least one aperture on the surface to expose portions of the surface of said silicon body, forming a refractory metal sandwich on the upper surface of the insulating layer and on the exposed body portion, formation of said sandwich including solely the steps of forming a silicon layer on a body portion and on the insulating layer, forming a refractory metal layer on the silicon layer and forming a second layer on the upper surface of the refractory metal layer.
References Cited (Backward Citations)
US3463715A
Cited
US3573570A
Cited
US3862017A
Cited
US3833842A
Cited
US3614547A
Cited
US3667008A
Cited
US3785862A
Cited
US4152823A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-05-04 | 1984-11-03 | 1985-05-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-05-04 | 1988-11-03 | 1989-05-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-05-04 | 1992-11-03 | 1993-05-05 | $7700.00 | Window Closed / Lapsed |