Ohmic contact and electrical interconnection system for electronic devices

Claim 2

An electrical connection system for an integrated circuit having a plurality of circuit components formed adjacent one surface of a substrate and an insulating layer on said one surface having a plurality of holes exposing portions of said circuit components, said system comprising: multilayer interconnections on said insulating layer electrically connecting certain portions of said circuit components through said holes in said insulating layer; another insulating layer on said multilayer interconnections having a plurality of holes exposing portionS of said multilayer interconnections; electrical interconnections on said another insulating layer electrically connecting certain portions of said multilayer interconnections, said multilayer interconnections having a lower film comprised of tungsten; an intermediate high-conductivity metal film; and an upper film comprised of tungsten.

Claim 3

The electrical connection system as defined in claim 1, wherein said electrical interconnections include a lower film comprised of tungsten and an upper high conductivity metal film.

Claim 4

The electrical connection system as defined in claim 1, wherein said high-conductivity metal film is gold.

Claim 5

The electrical connection system as defined in claim 1, wherein said high-conductivity metal film is copper.

Claim 6

The electrical connection system as defined in claim 2, wherein said high-conductivity metal film of said multilayer interconnections is copper and said high-conductivity metal film of said electrical interconnections is gold.

Claim 7

An electrical connection system for an integrated circuit having a plurality of circuit components formed adjacent one surface of a semiconductor substrate, a first insulating layer or said one surface having holes exposing portions of said circuit components, said system comprising: first multilayer interconnections on and adherent to said first insulating layer ohmically engaging and electrically interconnecting certain portions of said circuit components through said holes in said first insulating layer; a second insulating layer on and adherent to said first multilayer interconnections having holes exposing portions of said first multilayer interconnections; second multilayer interconnections on and adherent to said second insulating layer ohmically engaging and electrically interconnecting the exposed portions of said first multilayer interconnections, said first multilayer interconnections including a lower film comprised of tungsten; an intermediate high-conductivity metal film; and an upper film comprised of tungsten.

Claim 8

An electrical connection system for an integrated circuit having a plurality of circuit components formed adjacent one surface of a semiconductor substrate, a first insulating layer or said one surface having holes exposing portions of said circuit components, said system comprising: first multilayer interconnections on and adherent to said first insulating layer ohmically engaging and electrically interconnecting certain portions of said circuit components through said holes in said first insulating layer; a second insulating layer on and adherent to said first multilayer interconnections having holes exposing portions of said first multilayer interconnections; second multilayer interconnections on and adherent to said second insulating layer ohmically engaging and electrically interconnecting the exposed portions of said first multilayer interconnections, said first multilayer interconnections including a lower film comprised of tungsten; an intermediate high-conductivity metal film; and an upper film comprised of tungsten.

Claim 9

An electrical connection system according to claim 6, wherein said second multilayer interconnections include a lower film comprised of tungsten, and an upper high-conductivity metal film.

Claim 10

An electrical connection system according to claim 6, wherein said high-conductivity metal film is gold.

Claim 11

An electrical connection system according to claim 6, wherein said high-conductivity film is copper.

Claim 12

An electrical connection system according to claim 7, wherein said high-conductivity metal film of said first multilayer interconnections is copper and said high-conductivity metal film of said second multilayer interconnections is gold.

Claim 13

A semiconductor device comprising a metallic film ohmically contacting a semiconductor surface portion of said semiconductor device, said film comprising tungsten.

Claim 14

A semiconductor device comprising a metallic film ohmically contacting a semiconductor surface portion of said semiconductor device, said film comprising tungsten.

Claim 15

A semiconductor device according to claim 11, including a high-conductivity metal film on at least a portion of said metallic film.

Claim 16

A semiconductor device according to claim 11, wherein said high-conductivity film is gold.

Claim 17

A semiconductor device comprising a semiconductor substrate having first and second zones of opposite conductivity types forming a P-N junction therebetween terminating at one surface of said substrate beneath an insulating layer on said one surface, said insulating layer defining the hole therein exposing a portion of said first zone, a metallic film on and adherent to said insulating layer and ohmically connecting to the exposed portion of said first zone, said film comprising tungsten.

Claim 18

A semiconductor device comprising a semiconductor substrate having first and second zones of opposite conductivity types forming a P-N junction therebetween terminating at one surface of said substrate beneath an insulating layer on said one surface, said insulating layer defining the hole therein exposing a portion of said first zone, a metallic film on and adherent to said insulating layer and ohmically connecting to the exposed portion of said first zone, said film comprising tungsten.

Claim 19

A semiconductor device according to claim 14, including a high-conductivity metal film on at least a portion of said metallic film.

Claim 20

A semiconductor device according to claim 15, wherein said semiconductor device comprises an integrated semiconductor circuit having a plurality of circuit components adjacent said one surface of said substrate, said insulating layer defines a pluraLity of holes exposing contact portions on said circuit components, one of which is said portion of said first zone, and said metallic film defines a plurality of strips ohmically connecting to said contact portions and electrically interconnecting said circuit components.

Claim 21

A semiconductor device according to claim 14, wherein said semiconductor substrate is silicon and said insulating layer is silicon oxide.

Claim 22

An ohmic contact for an electronic device formed adjacent one surface of a substrate comprising an insulating layer on said one surface having a hole therein exposing a contact portion on said electronic device, a metallic film on and adherent to said insulating layer and ohmically contacting said portion of said electronic device, and a high-conductive metal film on at least a portion of said metallic film, said metallic film comprising tungsten.

Claim 23

An ohmic contact for an electronic device formed adjacent one surface of a substrate comprising an insulating layer on said one surface having a hole therein exposing a contact portion on said electronic device, a metallic film on and adherent to said insulating layer and ohmically contacting said portion of said electronic device, and a high-conductive metal film on at least a portion of said metallic film, said metallic film comprising tungsten.

Claim 24

A nonhermetically enclosed semiconductor device comprising a semiconductor substrate having first and second zones of opposite conductivity types forming a P-N junction therebetween terminating at one surface of said substrate beneath an insulating layer on said one surface, said insulating layer defining an opening therein exposing a portion of said first zone, a metallic film on and adherent to said insulating layer and ohmically connecting to the exposed portion of said first zone through said opening, said film comprising tungsten.

Claim 25

A nonhermetically enclosed semiconductor device comprising a semiconductor substrate having first and second zones of opposite conductivity types forming a P-N junction therebetween terminating at one surface of said substrate beneath an insulating layer on said one surface, said insulating layer defining an opening therein exposing a portion of said first zone, a metallic film on and adherent to said insulating layer and ohmically connecting to the exposed portion of said first zone through said opening, said film comprising tungsten.

Claim 26

A nonhermetically enclosed semiconductor device according to claim 19, including a high-conductivity metal film on at least a portion of said metallic film.

Claim 27

An electrical connection system for an integrated circuit having a plurality of circuit components formed adjacent one surface of a substrate and an insulating layer on said one surface having a plurality of holes exposing portions of said circuit components, said system comprising: electrical interconnections on said insulating layer electrically connecting certain portions of said circuit components through said holes in said insulating layer: and another insulating layer on said electrical interconnections having a plurality of holes exposing portions of said interconnections, electrical connections on said another insulating layer electrically contacting certain portions of said interconnections, said connections having a film comprised of tungsten.

Claim 28

An electrical connection system for an integrated circuit having a plurality of circuit components formed adjacent one surface of a substrate and an insulating layer on said one surface having a plurality of holes exposing portions of said circuit components, said system comprising: electrical interconnections on said insulating layer electrically connecting certain portions of said circuit components through said holes in said insulating layer: and another insulating layer on said electrical interconnections having a plurality of holes exposing portions of said interconnections, electrical connections on said another insulating layer electrically contacting certain portions of said interconnections, said connections having a film comprised of tungsten.

Claim 29

An electrical connection system for an integrated circuit having a plurality of circuit components formed adjacent one surface of a substrate, a first insulating layer on said one surface having holes exposing portions of said circuit components, said system comprising: first multilayer interconnections on and adherent to said first insulating layer ohmically engaging and electrically interconnecting certain portions of said circuit components through said holes in said insulating layer; second insulating layer on and adherent to said first multilayer interconnections having holes exposing portions of said first multilayer interconnections, and second multilayer interconnections on and adherent to said insulating layer ohmically engaging and electrically interconnecting the exposed portions of said first multilayer interconnections, at least a portion of said multilayer interconnections comprised of tungsten.

Claim 30

An electrical connection system for an integrated circuit having a plurality of circuit components formed adjacent one surface of a substrate, a first insulating layer on said one surface having holes exposing portions of said circuit components, said system comprising: first multilayer interconnections on and adherent to said first insulating layer ohmically engaging and electrically interconnecting certain portions of said circuit components through said holes in said insulating layer; second insulating layer on and adherent to said first multilayer interconnections having holes exposing portions of said first multilayer interconnections, and second multilayer interconnections on and adherent to said insulating layer ohmically engaging and electrically interconnecting the exposed portions of said first multilayer interconnections, at least a portion of said multilayer interconnections comprised of tungsten.