US4262299A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor-on-insulator device and method for its manufacture
Assignee: RCA Corp
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Filing: 1979-01-29
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Granted: 1981-04-14
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Expires: 1999-01-29
Abstract
Abstract A monolithic semiconductor-on-insulator device includes silicon islands in spaced relation on the surface of an insulating substrate, with the spaces between the islands occupied by a passivating material which comprises a layer of a semi-insulating material having finite but low conductivity on the surface of the substrate and extending between adjacent islands into contiguous relation with the side surfaces thereof. The surface of the semi-insulating material has a layer of insulating silicon dioxide thereon. The conductivity of the semi-insulating material is such that charge does not accumulate in this material adjacent to the side edges of the islands, but its conductivity is low enough so that leakage currents between devices remain below an amount which would render the circuit which uses the device non-operative.
Inventors
- 👤 William E. Ham
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 10:22
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/481; H10D; H10D86/00; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10W74/10; H10W74/131; H10W74/137; H10W10/041; H10W10/40
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
104 words
An improved semiconductor-on-insulator device including an insulating substrate having a surface, spaced islands of epitaxial silicon on the surface of the substrate, each of said islands having a surface substantially parallel to the surface of the substrate and each having side surfaces at an angle to the surface of the substrate, and passivating means on the surface of the substrate in the spaces between the islands, wherein the improvement comprises said passivating means comprising a layer of oxygen doped polycrystalline silicon semi-insulating material on and contiguous with the surface of the substrate and extending between the islands in contiguous relation to the sidewalls thereof.
Claim 2
Dependent Claim
104 words
An improved semiconductor-on-insulator device including an insulating substrate having a surface, spaced islands of epitaxial silicon on the surface of the substrate, each of said islands having a surface substantially parallel to the surface of the substrate and each having side surfaces at an angle to the surface of the substrate, and passivating means on the surface of the substrate in the spaces between the islands, wherein the improvement comprises said passivating means comprising a layer of oxygen doped polycrystalline silicon semi-insulating material on and contiguous with the surface of the substrate and extending between the islands in contiguous relation to the sidewalls thereof.
Claim 3
Dependent Claim
25 words
A semiconductor-on-insulator device as defined in claim 1 wherein said passivating means further comprises a layer of silicon dioxide on the layer of semi-insulating material.
Claim 4
Dependent Claim
25 words
A semiconductor-on-insulator device as defined in claim 2 wherein said layer of oxygen doped polycrystalline silicon semi-insulating material is composed of amorphous or polycrystalline silicon.
Claim 5
Dependent Claim
44 words
A semiconductor-on-insulator device as defined in claim 2 wherein the layer of oxygen doped polycrystalline silicon semi-insulating material is a layer which contains silicon microcrystals with disordered silicon boundaries therebetween, and wherein discrete zones of silicon oxide are disposed at some of said boundaries.
Claim 6
Dependent Claim
34 words
A semiconductor-on-insulator device as defined in claim 2 wherein each of the islands has a layer of silicon dioxide on the parallel surface thereof, said layer having the characteristics of an MOS gate insulator.
Claim 7
Dependent Claim
42 words
A semiconductor-on-insulator device as defined in claim 5 wherein the layer of silicon dioxide on the layer of oxygen doped polycrystalline semi-insulating material and the layers of silicon dioxide on the islands are each part of a continuous, integral silicon dioxide layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-04-13 | 1984-10-13 | 1985-04-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-04-13 | 1988-10-13 | 1989-04-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-04-13 | 1992-10-13 | 1993-04-14 | $7700.00 | Window Closed / Lapsed |