Method of manufacturing semiconductor devices utilizing simultaneous deposition of monocrystalline and polycrystalline regions

Claim 1

The method according to claim 1, further comprising the steps of forming a second insulating film in said openings and providing on said insulating film an electrode connected to the surface of said diffused region formed in said monocrystalline semiconductor layer and extending over said polycrystalline semiconductor layer with said second insulating film interposed therebetween.

Claim 5

A method for manufacturing a semiconductor device comprising the steps of selectively providing an insulating layer on a major surface of a monocrystalline substrate; depositing a semiconductor layer of one conductivity type on the major surface of said substrate so as to form a polycrystalline semiconductor layer on said insulating layer and to form a monocrystalline semiconductor layer on the major surface of said substrate where said insulating layer is not provided; forming on the surface of said polycrystalline and monocrystalline semiconductor layers an insulating film haviNg an opening therein so as to selectively expose the surface of said polycrystalline semiconductor layer; and diffusing an impurity of opposite conductivity type to said one conductivity type into said polycrystalline semiconductor layer through said opening.

Claim 9

A method for manufacturing a semiconductor device comprising the steps of forming an insulating layer on a major surface of a monocrystalline semiconductor substrate of one conductivity type, selectively removing a part of said insulating layer to form a first opening therein and expose a part of the major surface of said substrate, diffusing a first impurity of opposite conductivity type to said one conductivity type into said substrate through said first opening, removing said insulating layer except the portion which circumferentially surrounds the first impurity diffused region in those parts where the semiconductor device is to be isolated from adjacent devices, simultaneously depositing a polycrystalline semiconductor layer on the remaining insulating layer and a monocrystalline semiconductor layer on the exposed major surface of said substrate so that said polycrystalline semiconductor layer surrounds said monocrystalline semiconductor layer in said parts, said polycrystalline and said monocrystalline semiconductor layer being of the same conductivity type as said first impurity, forming an insulating film on the surfaces of polycrystalline and monocrystalline semiconductor layers, forming second openings in said insulating film to expose surface portions of said polycrystalline and monocrystalline semiconductor layers so that the exposed surface of said polycrystalline semiconductor layer surrounds the exposed surface of said monocrystalline semiconductor layer in said parts, and selectively diffusing through said second openings a second impurity opposite to the conductivity type of said first impurity into said polycrystalline semiconductor layer to extend to the bottom thereof and into said monocrystalline semiconductor layer to be spaced from said major surface of said substrate.

Claim 14

A method for manufacturing a semiconductor integrated circuit device comprising the steps of providing an insulating layer with a lattice or ring pattern on a major surface of a monocrystalline semiconductor substrate having a first conductivity type, depositing a semiconductor layer having a second conductivity type opposite to said first conductivity type on the major surface of said substrate so as to simultaneously form a polycrystalline semiconductor region on said insulating layer and a plurality of monocrystalline semiconductor regions separated by said polycrystalline semiconductor region on the major surface of said substrate where said insulating layer is not provided and where said monocrystalline semiconductor regions are isolated from each other, covering the surface of said deposited semiconductor layer with a first insulating film having openings therein to expose the surfaces of said polycrystalline semiconductor region and said monocrystalline semiconductor regions, the latter exposed surfaces being surrounded by the former exposed surface in those circumferential parts where they are isolated from each other, selectively diffusing an impurity of said first conductivity type into said deposited semiconductor layer through said openings so as to simultaneously form a first diffused region of the first conductivity type spaced from the major surface of said substrate in each of said monocrystalline semiconductor regions and a second diffused region of the first conductivity type substantially extending to the bottom of said polycrystalline semiconductor region and having the lattic or ring pattern in said polycrystalline semiconductor region, said first diffused regions being thereby surrounded by said second diffused region in those adjacent circumferential parts where they are isolated from each other, covering said openings with a second insulating film, providing interconnection layers extending over said first insulating film and crossing over said polycrystalline semiconductor region with said second insulating film interposed to electrically connect said monocrystalline regions which are isolated by said substrate and said polycrystalline semiconductor region of the first conductivity type from each other.

Claim 16

A method for manufacturing a semiconductor device comprising the steps of simultaneously depositing a monocrystalline semiconductor region and a polycrystalline semiconductor region on a major surface of a monocrystalline semiconductor substrate and causing the surface of said polycrystalline semiconductor region to project above the surface of said monocrystalline semiconductor region, said monocrystalline region and said polycrystalline region being of a first conductivity type, whereby a boundary line is formed between said two regions at the surface thereof, and positioning masks to be used in succeeding steps along said boundary line, and selectively diffusing an impurity of opposite conductivity type to said first type into said two regions through the masks.

Claim 17

A method for manufacturing a semiconductor device characterized in that an insulating film is selectively formed on a major plane surface of a monocrystalline semiconductor substrate, a semi-conductor layer of one conductivity type is deposited on said substrate so as to simultaneously form a monocrystalline semiconductor region on the major surface of said substrate where said insulating layer is not formed and a polycrystalline semiconductor region slightly projecting from said monocrystalline semi-conductor region on said insulating layer, whereby a boundary line is formed between said polycrystalline and monocrystalline semiconductor region at the surface thereof, and positioning masks to be used in succeeding steps along said boundary line, and selectively diffusing an impurity of opposite conductivity type to said one conductivity type into said two regions through the masks.

Claim 19

A method for manufacturing a semiconductor device comprising the steps of oxidizing a monocrystalline silicon substrate surface to form a thermally grown insulating film essentially consisting of silicon oxide thereon, selectively removing said insulating film to partially expose the surface of said silicon substrate, depositing a semiconductor layer of one conductivity type on said remaining insulating film and said exposed substrate surface from vapor phase, whereby a polycrystalline and a monocrystalline semiconductor layer are formed on said remaining insulating film and said exposed substrate surface, respectively, and selectively diffusing an opposite conductivity type determining impurity to said one conductivity type into said polycrystalline semiconductor layer.