US3617822A
Expired / Lapsed
US
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Semiconductor integrated circuit
Assignee: Sony Corp
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Filing: 1969-10-29
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Granted: 1971-11-02
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Expires: 1989-10-29
Abstract
Abstract A semiconductor integrated circuit comprising single crystal regions isolated from each other by means of high-resistance polycrystalline regions and PN junctions. The polycrystalline regions and the single crystal regions and doped with the same impurity concentration but the resistivity of the polycrystalline regions is much greater than that of the single crystal regions.
Inventors
- 👤 Isamu Kobayashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 04:43
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/67; H10D84/673; H10D84/611; H10D84/613; H10D84/615; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3444; H10P32/00; H10P32/10; H10P32/15; H10P95/00; H10W; H10W10/00; H10W10/01; H10W10/031; H10W10/041; H10W10/30; H10W10/40; H10W15/00; H10W15/01; Y; Y10; Y10S; Y10S148/00; Y10S148/026; Y10S148/037; Y10S148/085; Y10S148/098; Y10S148/122; Y10S148/151; Y10S438/00; Y10S438/969
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
21 words
An integrated circuit wafer according to claim 1, wherein at least some of said monocrystalline islands having junction devices formed therein.
Claim 2
Dependent Claim
57 words
An integrated circuit wafer according to claim 1, wherein portions of said substrate immediately below at least some of said monocrystalline islands having a high-impurity-type concentration opposite to that of said substrate and providing PN junction isolation between said some of said islands and said substrate and the high-resistivity polycrystalline regions providing lateral isolation between said islands.
Claim 3
Dependent Claim
24 words
An integrated circuit wafer according to claim 1, wherein the said impurity concentration of said islands and said polycrystalline regions are substantially the same.
Claim 4
Dependent Claim
18 words
An integrated circuit wafer according to claim 1, wherein said monocrystalline islands have semiconductor circuit elements formed therein.
Claim 5
Dependent Claim
18 words
An integrated circuit wafer according to claim 1, wherein said seeding site material is an oxide of silicon.
Claim 6
Dependent Claim
16 words
An integrated circuit wafer according to claim 1, wherein said seeding site material is trisilicon tetranitride.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-11-01 | 1975-05-03 | 1975-11-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-11-01 | 1979-05-03 | 1979-11-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-11-01 | 1983-05-03 | 1983-11-02 | $7700.00 | Window Closed / Lapsed |