Integrated circuit isolation using gold-doped polysilicon

Claim 2

A semiconductor device comprising: a monocrystalline semiconductor region; and a polycrystalline semiconductor region being directly contiguous to said monocrystal region and doped with an impurity forming a deep level therein; in which said monocrystalline region is doped with a first conductivity-type-determining impurity and gold, and said polycrystalline region is doped with gold and a second conductivity-type determining impurity.

Claim 3

A semiconductor device comprising: a monocrystalline semiconductor substrate having a principal surface; a monocrystalline semiconductor layer epitaxially grown on said principal surface; a polycrystalline semiconductor layer formed on said principal surface of the semiconductor substrate directly contiguous to and enclosing said monocrystalline layer and distributed with a deep-level-forming impurity; and an insulating film between sad polycrystalline semiconductor layer and said semiconductor substrate.

Claim 4

A semiconductor device comprising: a monocrystalline semiconductor substrate having a principal surface; a monocrystalline semiconductor layer epitaxially grown on said principal surface; a polycrystalline semiconductor layer formed on said principal surface of the semiconductor substrate directly contiguous to and enclosing said monocrystalline layer and distributed with a deep-level-forming impurity; and an insulating film between sad polycrystalline semiconductor layer and said semiconductor substrate.

Claim 5

A semiconductor device comprising: a monocyrstalline semiconductor substrate having a principal surface; a monocrystalline semiconductor layer epitaxially grown on said prinicipal surface; a polycrystalline semiconductor layer formed on said principal surface of the semiconductor substrate directly contiguous to and enclosing said monocrystalline layer and distributed with a deep-level-forming impurity; and in which said monocrystalline semiconductor substrate includes a first conductivity-type-determining impurity, said monocrystalline and polycrystalline semiconductor layers are doped with a second conductivity-type determining impurity, and said polycrystalline layer includes gold with a concentration not less than that of said second conductivity-type-determining impurity.

Claim 6

A semiconductor device comprising: a monocyrstalline semiconductor substrate having a principal surface; a monocrystalline semiconductor layer epitaxially grown on said prinicipal surface; a polycrystalline semiconductor layer formed on said principal surface of the semiconductor substrate directly contiguous to and enclosing said monocrystalline layer and distributed with a deep-level-forming impurity; and in which said monocrystalline semiconductor substrate includes a first conductivity-type-determining impurity, said monocrystalline and polycrystalline semiconductor layers are doped with a second conductivity-type determining impurity, and said polycrystalline layer includes gold with a concentration not less than that of said second conductivity-type-determining impurity.

Claim 7

A semiconductor device according to claim 2, in which said substrate monocrystalline layer and polycrystalline layer consist essentially of silicon, said insulating layer is formed of at least one material selected from the group consisting of silicon oxide, silicon nitride and aluminum oxide, and the said deep-level-forming impurity is gold.

Claim 8

A semiconductor device according to claim 3, in which said polycrystalline semiconductor layer is further layer doped with said first conductivity-type-determining impurity.

Claim 9

A semiconductor device according to claim 4, in which the concentration of gold is 10 14 to 10 15 atoms/cc.

Claim 10

A semiconductor integrated circuit device comprising a semiconductor monocrystalline substrate, a plurality of monocrystalline semiconductor layers formed on the surface of said substrate, each of said monocrystalline semiconductor layers having at least one semiconductor circuit element therein, and a plurality of polycrystalline semiconductor layers formed on the surface of said substrate between said plurality of monocrystalline semiconductor layers so as to surround said plurality of monocrystalline semiconductor layers, said plurality of polycrystalline layers including gold and a shallow level impurity.

Claim 11

A semiconductor integrated circuit device comprising a semiconductor monocrystalline substrate, a plurality of monocrystalline semiconductor layers formed on the surface of said substrate, each of said monocrystalline semiconductor layers having at least one semiconductor circuit element therein, and a plurality of polycrystalline semiconductor layers formed on the surface of said substrate between said plurality of monocrystalline semiconductor layers so as to surround said plurality of monocrystalline semiconductor layers, said plurality of polycrystalline layers including gold and a shallow level impurity.

Claim 12

A semiconductor integrated circuit device according to claim 7, wherein the surface of said semiconductor substrate is oriented to a (100) crystal plane.

Claim 13

A semiconductor device comprising: a monocrystalline semiconductor substrate having a principal surface, a monocrystalline semiconductor layer is selective areas on said principal surface, a polycrystalline semiconductor layer on said principal surface directly contiguous to and enclosing said monocrystalline layer, a deep-level forming impurity being distributed through said polycrystalline semiconductor layer to improve the electrical characteristics of the semiconductor device as regards isolation, wherein said deep-level-forming impurity is selected from the group consisting of gold, zinc, iron, copper and nickel, and wherein said monocrystalline layer includes a region containing a first conductivity-type-determining impurity and said polycrystalline layer contains, in addition to the deep-level-forming impurity, a second conductivity-type-determining impurity opposite to said first conductivity-type-determining impurity.

Claim 14

A semiconductor device comprising: a monocrystalline semiconductor substrate having a principal surface, a monocrystalline semiconductor layer is selective areas on said principal surface, a polycrystalline semiconductor layer on said principal surface directly contiguous to and enclosing said monocrystalline layer, a deep-level forming impurity being distributed through said polycrystalline semiconductor layer to improve the electrical characteristics of the semiconductor device as regards isolation, wherein said deep-level-forming impurity is selected from the group consisting of gold, zinc, iron, copper and nickel, and wherein said monocrystalline layer includes a region containing a first conductivity-type-determining impurity and said polycrystalline layer contains, in addition to the deep-level-forming impurity, a second conductivity-type-determining impurity opposite to said first conductivity-type-determining impurity.

Claim 15

A semiconductor device comprising a monocrystalline semiconductor substrate having a principal surface, aamonocrystalline semicoductor layer in selective areas on said principal surface, a polycrystalline semiconductor layer on said principal surface directly contiguous to and enclosing said monocrystalline layer, a deep-level-forming impurity being distributed through said polycrystalline semiconductor layer to improve the electrical characteristics of the semiconductor device as regards isolation, and wherein said deep-level-forming impurity is gold with a concentration of about 10 14 to 10 15 atoms/cc.

Claim 16

A semiconductor device comprising a monocrystalline semiconductor substrate having a principal surface, aamonocrystalline semicoductor layer in selective areas on said principal surface, a polycrystalline semiconductor layer on said principal surface directly contiguous to and enclosing said monocrystalline layer, a deep-level-forming impurity being distributed through said polycrystalline semiconductor layer to improve the electrical characteristics of the semiconductor device as regards isolation, and wherein said deep-level-forming impurity is gold with a concentration of about 10 14 to 10 15 atoms/cc.

Claim 17

A semiconductor device according to claim 10, wherein said monocrystalline semiconductor layer is provided with a first conductivity-type-determining impurity forming a region therein and said polycrystalline region contains a second conductivity-type-determining impurity opposite to said first conductivity type determining impurity.