Patent US4249962A successfully refreshed from Google Patents.
US4249962A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of removing contaminating impurities from device areas in a semiconductor wafer
Assignee: AT&T Inc
•
Filing: 1979-09-11
•
Granted: 1981-02-10
•
Expires: 1999-09-11
Abstract
Abstract High energy ions are implanted at both the device areas (11--11) on a semiconductor wafer 10 to form electrical devices (15--15) and at areas (14--14) remote therefrom. The device areas (11--11) are then selectively laser recrystallized to repair damage caused by the ion implantation and the wafer (10) is placed in a furnace for a time and at a temperature sufficient to cause gettering of contaminating impurities to the damage remote areas (14--14).
Inventors
- 👤 George K. Celler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 17:36
CPC Classifications
H; H10; H10P; H10P36/00; H10P36/03; H10P34/00; H10P34/40; H10P34/42; Y; Y10; Y10S; Y10S148/00; Y10S148/09; Y10S148/093
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
110 words
A method of fabricating a plurality of device areas, substantially free of contaminating impurities and damage, in a semiconductor wafer, comprising the steps of: (a) forming a plurality of device areas in the wafer wherein the device areas may be damaged during the formation thereof and may include contaminating impurities; (b) forming damaged remote locations on the wafer to which the contaminating impurities will migrate and be trapped upon application of heat to the wafer; (c) selectively recrystallizing the damaged device area; and (d) heating the wafer for a time and at such a temperature to cause the contaminating impurities to migrate from the device areas to the remote locations.
Claim 2
Independent Claim
110 words
A method of fabricating a plurality of device areas, substantially free of contaminating impurities and damage, in a semiconductor wafer, comprising the steps of: (a) forming a plurality of device areas in the wafer wherein the device areas may be damaged during the formation thereof and may include contaminating impurities; (b) forming damaged remote locations on the wafer to which the contaminating impurities will migrate and be trapped upon application of heat to the wafer; (c) selectively recrystallizing the damaged device area; and (d) heating the wafer for a time and at such a temperature to cause the contaminating impurities to migrate from the device areas to the remote locations.
Claim 3
Dependent Claim
17 words
The method as set forth in claim 1, wherein: the device areas are formed by ion implantation.
Claim 4
Dependent Claim
17 words
The method as set forth in claim 1, wherein: the remote locations are damaged by ion implantation.
Claim 5
Dependent Claim
21 words
The method as set forth in claim 1, wherein: the devices are formed by diffusing a high concentration of dopants therein.
Claim 6
Dependent Claim
18 words
The method as set forth in claim 1, wherein: the remote locations are damaged by a particle beam.
Claim 7
Dependent Claim
23 words
The method as set forth in claim 1, wherein: the damaged remote locations are formed by depositing amorphous semiconductor material at said locations.
Claim 8
Dependent Claim
39 words
The method as set forth in claim 1, which is characterized by: depositing an amorphous layer of doped semiconductor material on the surface of the wafer and forming at least a portion of each device area in said layer.
Claim 9
Dependent Claim
21 words
The method as set forth in claim 1, wherein: the recrystallizing step is accomplished with a beam of high energy radiation.
Claim 10
Dependent Claim
42 words
The method as set forth in claim 1, wherein: the damage at the remote locations form a grid pattern on the wafer which separates the device areas; and particulating the semiconductor wafer along the grid pattern to remove contaminating impurities migrating thereto.
Claim 11
Dependent Claim
43 words
The method as set forth in claim 1, wherein the damaged remote locations on the wafer are amorphous, the method further comprising the step of: directing a beam of high energy at said remote locations to change the amorphous material to polycrystalline material.
Claim 12
Dependent Claim
19 words
The method as set forth in claim 8, wherein: the beam of high energy radiation is an electron beam.
Claim 13
Dependent Claim
19 words
The method as set forth in claim 8, wherein: the beam of high energy radiation is a laser beam.
Claim 14
Dependent Claim
23 words
The method as set forth in claim 9, characterized by: particulating the wafer along the grid pattern upon completion of the device fabrication.
Claim 15
Dependent Claim
19 words
The method as set forth in claim 10, wherein: the beam of high energy radiation is an electron beam.
Claim 16
Dependent Claim
19 words
The method as set forth in claim 10, wherein: the beam of high energy radiation is a laser beam.
Claim 17
Independent Claim
91 words
A method of fabricating a plurality of substantially contamination free devices on a semiconductor wafer, comprising the steps of: (a) forming a plurality of device areas in the wafer wherein the device areas are damaged during the formation thereof; (b) forming amorphous semiconductor material at areas remote from the devices; (c) directing a high energy beam at the amorphous material to form polycrystalline material at tthe remote areas; (d) heating the wafer for a time and temperature to cause contaminating impurities to migrate from the device areas to the remote areas.
Claim 18
Independent Claim
91 words
A method of fabricating a plurality of substantially contamination free devices on a semiconductor wafer, comprising the steps of: (a) forming a plurality of device areas in the wafer wherein the device areas are damaged during the formation thereof; (b) forming amorphous semiconductor material at areas remote from the devices; (c) directing a high energy beam at the amorphous material to form polycrystalline material at tthe remote areas; (d) heating the wafer for a time and temperature to cause contaminating impurities to migrate from the device areas to the remote areas.
Claim 19
Dependent Claim
18 words
The method as set forth in claim 16, wherein: the amorphous semiconductor material is formed by ion implantation.
Claim 20
Dependent Claim
21 words
The method, as set forth in claim 17, wherein: the amorphous semiconductor material is selectively vapor deposited at the remote areas.
Claim 21
Dependent Claim
17 words
The method as set forth in claim 16, wherein: the high energy beam is an electron beam.
Claim 22
Dependent Claim
17 words
The method as set forth in claim 16, wherein: the high energy beam is a laser beam.
References Cited (Backward Citations)
US3457632A
Cited
US3540925A
Cited
US3622382A
Cited
US3663308A
Cited
US3796929A
Cited
US3880675A
Cited
US3874936A
Cited
US3778626A
Cited
US4004950A
Cited
US4151008A
Cited
US3948694A
Cited
US3997368A
Cited
US4053925A
Cited
US4025364A
Cited
US4047974A
Cited
US4055444A
Cited
US4053335A
Cited
US4069068A
Cited
US4076558A
Cited
US4098618A
Cited
US4131487A
Cited
US4137100A
Cited
US4155779A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-02-10 | 1984-08-11 | 1985-02-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-02-10 | 1988-08-11 | 1989-02-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-02-10 | 1992-08-11 | 1993-02-10 | $7700.00 | Window Closed / Lapsed |