US3663308A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making ion implanted dielectric enclosures
Assignee: United States Department of the Navy
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Filing: 1970-11-05
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Granted: 1972-05-16
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Expires: 1990-11-05
Abstract
Abstract A method of producing electrical isolation between semiconductor devices diffused in a substrate by ion implantation of various species of gases around the semiconductor devices, forming insulating dielectric cups.
Inventors
- 👤 John Edmund Davey
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 09:20
CPC Classifications
H; H10; H10P; H10P95/00; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10P30/208; H10W; H10W10/00; H10W10/01; H10W74/00; H10W74/40; H10W74/43; Y; Y10; Y10S; Y10S148/00; Y10S148/085; Y10S148/122; Y10S438/00; Y10S438/928
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
34 words
A method as recited in claim 1 wherein said ions are selected from the group consisting of argon, helium and hydrogen, wherein said substrate comprises polycrystalline silicon, and wherein said semiconductor devices comprise transistors.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-05-16 | 1975-11-15 | 1976-05-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-05-16 | 1979-11-15 | 1980-05-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-05-16 | 1983-11-15 | 1984-05-16 | $7700.00 | Window Closed / Lapsed |