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US4180826A
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MOS double polysilicon read-only memory and cell
Assignee: Intel Corp
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Filing: 1978-05-19
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Granted: 1979-12-25
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Expires: 1998-05-19
Abstract
Abstract A high density, read-only, mask programmed memory and memory cell fabricated with two layers of polycrystalline silicon (polysilicon) is disclosed. Elongated doped substrate regions form source/drain regions for the cells and are used as bit lines for the memory. The first layer of polysilicon defines gates for the cells; the second layer of polysilicon defines transverse work lines. Programming consists of selective contacts between the first and second layers of polysilicon over the active regions of the cells. A cell area of approximately 0.125 mils 2 is realized.
Inventors
- 👤 Joseph Shappir
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 04:02
CPC Classifications
G; G11; G11C; G11C17/00; G11C17/08; G11C17/10; G11C17/12; G11C17/126; H; H10; H10B; H10B20/00; H10B20/27; H10B20/30; H10B20/36; H10B20/363; H10P; H10P76/00; H10P76/40; H10W; H10W20/00; H10W20/01; H10W20/40; H10W20/49; Y; Y10; Y10S; Y10S148/00; Y10S148/122
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
168 words
MOS memory cells for a read-only memory which store binary data, said cells formed on a silicon substrate, comprising: a pair of spaced-apart, elongated doped regions formed in said substrate, said doped regions forming source and drain regions for said cells; a first line of polysilicon insulated from said substrate extending generally between said doped regions, said first line including discontinuities forming isolated sections of said line for cells which store one binary state, said first line being continuous for cells which store the other binary state; a plurality of second lines of polysilicon disposed above said first line, said second lines generally transverse to said first line; said second lines associated with said cells which store said one binary state contacting said isolated sections of said first line to provide contact to said isolated sections, the others of said second lines insulated from said first line; whereby memory cells are formed, some programmed with said one binary state and the other cells with the other binary state.
Claim 2
Dependent Claim
168 words
MOS memory cells for a read-only memory which store binary data, said cells formed on a silicon substrate, comprising: a pair of spaced-apart, elongated doped regions formed in said substrate, said doped regions forming source and drain regions for said cells; a first line of polysilicon insulated from said substrate extending generally between said doped regions, said first line including discontinuities forming isolated sections of said line for cells which store one binary state, said first line being continuous for cells which store the other binary state; a plurality of second lines of polysilicon disposed above said first line, said second lines generally transverse to said first line; said second lines associated with said cells which store said one binary state contacting said isolated sections of said first line to provide contact to said isolated sections, the others of said second lines insulated from said first line; whereby memory cells are formed, some programmed with said one binary state and the other cells with the other binary state.
Claim 3
Dependent Claim
22 words
The memory cells defined by claim 1 wherein said spaced-apart regions are parallel regions in alignment with said first line of polysilicon.
Claim 4
Dependent Claim
16 words
The memory cells defined by claim 2 wherein said second lines of polysilicon are parallel lines.
Claim 5
Dependent Claim
28 words
The memory cells defined by claim 1 wherein said elongated doped regions are bit lines in said memory and said second lines are word lines in said memory.
Claim 6
Dependent Claim
25 words
The memory cells defined by claim 1 including channel stops in said substrate adjacent to opposite sides of said isolated sections of said first line.
Claim 7
Dependent Claim
21 words
The memory cells defined by claim 1 wherein said substrate is a p-type substrate and said doped regions are n-type regions.
Claim 8
Dependent Claim
138 words
An MOS read-only memory formed on a silicon substrate comprising: a plurality of elongated, parallel, spaced-apart doped regions in said substrate, said doped regions forming source and drain regions for cells of said memory; a plurality of first level polysilicon lines insulated from said substrate disposed generally between said doped regions, said first lines including non-continuous sections at cells programmed with one binary state, and said first lines being continuous at cells programmed with the other binary state; a plurality of second level parallel, spaced-apart polysilicon lines disposed over said first lines, said second lines generally transverse to said doped regions; said second lines contacting said non-continuous sections of said first lines, and said second lines insulated from said first lines at said cells programmed with said other binary state; whereby a dense, programmed read-only memory is realized.
Claim 9
Dependent Claim
138 words
An MOS read-only memory formed on a silicon substrate comprising: a plurality of elongated, parallel, spaced-apart doped regions in said substrate, said doped regions forming source and drain regions for cells of said memory; a plurality of first level polysilicon lines insulated from said substrate disposed generally between said doped regions, said first lines including non-continuous sections at cells programmed with one binary state, and said first lines being continuous at cells programmed with the other binary state; a plurality of second level parallel, spaced-apart polysilicon lines disposed over said first lines, said second lines generally transverse to said doped regions; said second lines contacting said non-continuous sections of said first lines, and said second lines insulated from said first lines at said cells programmed with said other binary state; whereby a dense, programmed read-only memory is realized.
Claim 10
Dependent Claim
23 words
The memory defined by claim 7 wherein said elongated regions form bit lines for said memory for sensing said states of said cells.
Claim 11
Dependent Claim
20 words
The memory defined by claim 7 wherein said substrate is a p-type substrate and said elongated regions are n-type regions.
Claim 12
Dependent Claim
22 words
The memory defined by claim 7 including channel stop regions in said substrate adjacent to said non-continuous sections of said first lines.
Claim 13
Dependent Claim
19 words
The memory defined by claim 7 including additional elongated doped regions which permits isolation of cells in said memory.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-12-24 | 1983-06-25 | 1983-12-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-12-24 | 1987-06-25 | 1987-12-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-12-24 | 1991-06-25 | 1991-12-25 | $7700.00 | Window Closed / Lapsed |