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Patent US4125426A successfully refreshed from Google Patents.
US4125426A
Expired / Lapsed
US
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Method of manufacturing semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1977-08-18
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Granted: 1978-11-14
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Expires: 1997-08-18
Abstract
Abstract A simplified method of manufacturing a semiconductor device is disclosed wherein a base region is formed on a silicon substrate and an impurity is diffused into the base region. Any insulating film present on the silcon substrate is removed, substrate and an even film of silicon dioxide is coated thereon. Emitter diffusion windows, base electrode windows, collector electrode windows and resistor electrode windows are formed in the silicon dioxide film and a uniform film of polycrystal silicon is deposited over the silicon dioxide film and the electrode windows. Impurities are diffused through the polycrystal silicon film at the emitter and collector windows but not through the base window. An aluminum electrode layer is formed on the polycrystal silicon layer and patterned to form an electrode wiring pattern. Subsequently, the polysilicon layer is removed in exposed areas utilizing the aluminum electrode layer as a mask.
Inventors
- 👤 Katsuyuki Inayoshi
- 👤 Yoshinobu Monma
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 18:39
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/01; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10D84/00; H10D84/01; H10D84/0112; H10D84/02; H10D84/03; H10D84/038; H10P; H10P14/00; H10P14/60; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/1414; H10P32/17; H10P32/171; H10P95/00; H10W; H10W20/00; H10W20/01; Y; Y10; Y10S; Y10S148/00; Y10S148/038; Y10S148/106; Y10S148/123; Y10S148/138; Y10S438/00; Y10S438/914; Y10S438/923
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
227 words
A method of manufacturing a semiconductor device on a substrate surface comprising the steps of: (a) forming a base region and an insulating layer on said semiconductor substrate surface, said insulating layer covering said semiconductor substrate surface; (b) forming an emitter electrode window and a base electrode window in said insulating layer to expose said semiconductor substrate surface in each window; (c) forming a polycrystal semiconductor layer over the entire area of said insulating layer including said windows; (d) masking the polycrystal layer in the base window; (e) forming an emitter region by introducing an impurity utilizing an ion beam into said substrate through said polycrystal semiconductor layer formed in said emitter electrode window; (f) diffusing a base impurity into said polycrystal semiconductor layer in said base electrode window from said base region so as to make said polycrystal semiconductor layer in said base electrode window conductive; (g) forming an electrode metal layer over the entire are of said polycrystal semiconductor layer; and (h) selectively removing said electrode metal layer and the corresponding underlying polycrystal semiconductor layer to form wiring electrodes with said polycrystal semiconductor layer remaining between said semiconductor substrate and said electrode metal layer at each of said emitter and base electrode windows thereby forming an emitter electrode and a base electrode which are ohmically connected to said emitter region and said base region respectively.
Claim 2
Independent Claim
227 words
A method of manufacturing a semiconductor device on a substrate surface comprising the steps of: (a) forming a base region and an insulating layer on said semiconductor substrate surface, said insulating layer covering said semiconductor substrate surface; (b) forming an emitter electrode window and a base electrode window in said insulating layer to expose said semiconductor substrate surface in each window; (c) forming a polycrystal semiconductor layer over the entire area of said insulating layer including said windows; (d) masking the polycrystal layer in the base window; (e) forming an emitter region by introducing an impurity utilizing an ion beam into said substrate through said polycrystal semiconductor layer formed in said emitter electrode window; (f) diffusing a base impurity into said polycrystal semiconductor layer in said base electrode window from said base region so as to make said polycrystal semiconductor layer in said base electrode window conductive; (g) forming an electrode metal layer over the entire are of said polycrystal semiconductor layer; and (h) selectively removing said electrode metal layer and the corresponding underlying polycrystal semiconductor layer to form wiring electrodes with said polycrystal semiconductor layer remaining between said semiconductor substrate and said electrode metal layer at each of said emitter and base electrode windows thereby forming an emitter electrode and a base electrode which are ohmically connected to said emitter region and said base region respectively.
Claim 3
Dependent Claim
11 words
A method of claim 1, wherein said semiconductor substrate is silicon.
Claim 4
Dependent Claim
16 words
A method of claim 1, wherein said insulating layer is substantially composed of SiO 2 .
Claim 5
Dependent Claim
15 words
A method of claim 1, wherein said polycrystal semiconductor layer is substantially composed of polysilicon.
Claim 6
Independent Claim
251 words
A method of manufacturing a semiconductor device on a silicon substrate comprising the steps of: forming a base region in said silicon substrate; forming a silicon dioxide film over the entire surface of said silicon substrate; forming an emitter diffusion window and base electrode window on said silicon dioxide film covering said silicon substrate surface to expose said silicon substrate surface base region in said windows; forming a polysilicon layer over the entire surface of said silicon dioxide film and each of said formed windows; forming a diffusion source layer including an impurity over the entire surface of said polycrystal silicon layer, except for at least the base electrode window; forming an emitter region within the base region by diffusing said impurity into the silicon substrate at said emitter diffusion window through the polycrystal silicon layer; simultaneously diffusing a base impurity into said polycrystal semiconductor layer in said base electrode window from said base region so as to make said polycrystal semiconductor layer in said base electrode window conductive; removing said diffusion source layer; coating an electrode metal layer over the entire surface of said polycrystal silicon layer; selectively removing said electrode metal layer and the corresponding underlying polycrystal silicon layer to form wiring electrodes having said polycrystal silicon layer remaining between said silicon substrate and said electrode metal layer at each of said emitter and base electrode windows thereby forming an emitter electrode and a base electrode which are ohmically connected to said emitter region and said base region respectively.
Claim 7
Independent Claim
251 words
A method of manufacturing a semiconductor device on a silicon substrate comprising the steps of: forming a base region in said silicon substrate; forming a silicon dioxide film over the entire surface of said silicon substrate; forming an emitter diffusion window and base electrode window on said silicon dioxide film covering said silicon substrate surface to expose said silicon substrate surface base region in said windows; forming a polysilicon layer over the entire surface of said silicon dioxide film and each of said formed windows; forming a diffusion source layer including an impurity over the entire surface of said polycrystal silicon layer, except for at least the base electrode window; forming an emitter region within the base region by diffusing said impurity into the silicon substrate at said emitter diffusion window through the polycrystal silicon layer; simultaneously diffusing a base impurity into said polycrystal semiconductor layer in said base electrode window from said base region so as to make said polycrystal semiconductor layer in said base electrode window conductive; removing said diffusion source layer; coating an electrode metal layer over the entire surface of said polycrystal silicon layer; selectively removing said electrode metal layer and the corresponding underlying polycrystal silicon layer to form wiring electrodes having said polycrystal silicon layer remaining between said silicon substrate and said electrode metal layer at each of said emitter and base electrode windows thereby forming an emitter electrode and a base electrode which are ohmically connected to said emitter region and said base region respectively.
Claim 8
Dependent Claim
12 words
A method of claim 5, wherein said diffusion source is phosphosilicate glass.
Claim 9
Dependent Claim
13 words
A method of claim 5, wherein said diffusion source is arsenic silicate glass.
Claim 10
Dependent Claim
28 words
A method of claim 5, wherein a collector electrode window is also formed in said silicon dioxide film during said step of forming said emitter and base windows.
Claim 11
Dependent Claim
31 words
A method of claim 5, wherein the surface concentration of the base region for forming the base electrode window is kept higher than that of the remainder of the base region.
Claim 12
Independent Claim
281 words
A method of manufacturing semiconductor integrated circuits on a silicon substrate, comprising the steps of: forming a base region in said silicon substrate; diffusing an impurity into the base region, for providing a base electrode, by resistor diffusion; removing entirely any insulating film covering the silicon substrate; forming a silicon dioxide film on the silicon substrate surface; forming an emitter diffusion window, a base electrode window, a collector electrode window and resistor electrode window in said formed silicon dioxide film to expose said silicon substrate surface in said windows; forming a uniform polycrystal silicon layer in said electrode windows and on said silicon dioxide film; forming an insulating film including impurities for emitter formation over the entire area of said polycrystal silicon layer; removing said insulating film from at least the base electrode window and resistor electrode window; simultaneously diffusing impurities in said insulating film into said silicon substrate through said polycrystal silicon layer in said emitter electrode window; diffusing a base impurity into said polycrystal semiconductor layer in said base electrode window from said base region so as to make said polycrystal semiconductor layer in said base electrode window conductive; removing said insulating film from said polycrystal silicon layer; coating an aluminum electrode layer on said polycrystal silicon layer; patterning and selectively removing of said aluminum electrode layer to form wiring electrodes; removing by etching the exposed polycrystal silicon layer, using said remaining aluminum electrode layer as a mask to leave said polycrystal silicon layer between said silicon substrate and each of said electrodes corresponding to said pattern thereby forming an emitter electrode and a base electrode which are ohmically connected to said emitter region and said base region respectively.
Claim 13
Independent Claim
281 words
A method of manufacturing semiconductor integrated circuits on a silicon substrate, comprising the steps of: forming a base region in said silicon substrate; diffusing an impurity into the base region, for providing a base electrode, by resistor diffusion; removing entirely any insulating film covering the silicon substrate; forming a silicon dioxide film on the silicon substrate surface; forming an emitter diffusion window, a base electrode window, a collector electrode window and resistor electrode window in said formed silicon dioxide film to expose said silicon substrate surface in said windows; forming a uniform polycrystal silicon layer in said electrode windows and on said silicon dioxide film; forming an insulating film including impurities for emitter formation over the entire area of said polycrystal silicon layer; removing said insulating film from at least the base electrode window and resistor electrode window; simultaneously diffusing impurities in said insulating film into said silicon substrate through said polycrystal silicon layer in said emitter electrode window; diffusing a base impurity into said polycrystal semiconductor layer in said base electrode window from said base region so as to make said polycrystal semiconductor layer in said base electrode window conductive; removing said insulating film from said polycrystal silicon layer; coating an aluminum electrode layer on said polycrystal silicon layer; patterning and selectively removing of said aluminum electrode layer to form wiring electrodes; removing by etching the exposed polycrystal silicon layer, using said remaining aluminum electrode layer as a mask to leave said polycrystal silicon layer between said silicon substrate and each of said electrodes corresponding to said pattern thereby forming an emitter electrode and a base electrode which are ohmically connected to said emitter region and said base region respectively.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-11-13 | 1982-05-15 | 1982-11-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-11-13 | 1986-05-15 | 1986-11-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-11-13 | 1990-05-15 | 1990-11-14 | $7700.00 | Window Closed / Lapsed |