Patent US2269838A successfully refreshed from Google Patents.
Patent US4069067A successfully refreshed from Google Patents.
US4069067A
Expired / Lapsed
US
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Method of making a semiconductor device
Assignee: Panasonic Holdings Corp
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Filing: 1976-03-16
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Granted: 1978-01-17
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Expires: 1996-03-16
Abstract
Abstract A semiconductor device is described comprising a semiconductor substrate, plural impurity-diffused regions formed in the substrate, an insulation layer formed so as to cover selected parts of the substrate, plural low-resistance semiconductor regions isolated from each other by the insulation layer and at least some of them contacting said diffused regions and conductive regions disposed in a manner to contact said low-resistance semiconductor regions, respectively.
Inventors
- 👤 Eisuke Ichinohe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 18:00
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/40; H10D; H10D30/00; H10D30/60; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; Y; Y10; Y10S; Y10S148/00; Y10S148/141
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
189 words
A method of making an integrated circuit semiconductor device comprising the successive steps of: a. providing a semiconductor substrate material of a first conductivity type, b. forming an insulation film having thinner parts, thicker parts and openings on a principle face of said semiconductor substrate, c. depositing a low-resistance semiconductor film on both the insulation film and openings, d. depositing an oxidation-resistant film on said low-resistance semiconductor film, e. forming a plurality of retained regions of said low-resistance semiconductor film by at least thinning the low-resistance semiconductor regions surrounding said retained regions, said retained regions being at least partly covered by said oxidation resistant film, f. introducing at least one impurity of a second conductivity type material into selected portions of the substrate region utilizing said retained regions of step (c) as a mask, g. oxidizing selected parts of the low-resistance semiconductor film by utilizing said oxidation-resistant film as a mask to form an insulation film, h. removing said oxidation-resistant film, thereby exposing a surface of said low-resistance semiconductor film, and i. forming metal contact films of a predetermined pattern on said exposed surface of said low-resistance semiconductor film.
Claim 2
Independent Claim
189 words
A method of making an integrated circuit semiconductor device comprising the successive steps of: a. providing a semiconductor substrate material of a first conductivity type, b. forming an insulation film having thinner parts, thicker parts and openings on a principle face of said semiconductor substrate, c. depositing a low-resistance semiconductor film on both the insulation film and openings, d. depositing an oxidation-resistant film on said low-resistance semiconductor film, e. forming a plurality of retained regions of said low-resistance semiconductor film by at least thinning the low-resistance semiconductor regions surrounding said retained regions, said retained regions being at least partly covered by said oxidation resistant film, f. introducing at least one impurity of a second conductivity type material into selected portions of the substrate region utilizing said retained regions of step (c) as a mask, g. oxidizing selected parts of the low-resistance semiconductor film by utilizing said oxidation-resistant film as a mask to form an insulation film, h. removing said oxidation-resistant film, thereby exposing a surface of said low-resistance semiconductor film, and i. forming metal contact films of a predetermined pattern on said exposed surface of said low-resistance semiconductor film.
Claim 3
Dependent Claim
65 words
The method of claim 1, wherein the retained regions of step (c) are formed by: 1. forming a plurality of said oxidation-resistive film regions having a first pattern, 2. forming an etchant resistant mask having a second pattern, and 3. etching selected parts of said plurality of oxidation-resistant film regions such as to at least thin said low-resistant semiconductor film, utilizing said etchant resistive mask.
Claim 4
Dependent Claim
13 words
The method of claim 1, wherein the impurity is introduced by ion implantation.
Claim 5
Dependent Claim
22 words
The method of claim 1, wherein said oxidation-resistant film is silicon nitride film and the low-resistive semiconductor film is polycrystalline silicon film.
Claim 6
Dependent Claim
60 words
The method of claim 1, wherein a predetermined part of said retained regions is surrounded by and isolated from said substrate by said insulation film thereby forming the gate region, and other predetermined parts of said retained regions are formed on a predetermined portion of said semiconductor substrate exposed from said openings to form the source and the drain region.
Claim 7
Dependent Claim
18 words
The method of claim 1, wherein step (c) comprises successive deposition steps of an impurity doped semiconductor film.
Claim 8
Dependent Claim
41 words
The method of claim 1, wherein step (c) comprises the successive steps of; 1. depositing a semiconductor film on said insulation film and said openings, 2. introducing one impurity of a second conductivity type into said semiconductor film by impurity diffusion.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-01-16 | 1981-07-18 | 1982-01-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-01-16 | 1985-07-18 | 1986-01-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-01-16 | 1989-07-18 | 1990-01-17 | $7700.00 | Window Closed / Lapsed |