Patent US3930908A successfully refreshed from Google Patents.
US3930908A
Expired / Lapsed
US
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Accurate control during vapor phase epitaxy
Assignee: RCA Corp
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Filing: 1974-09-30
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Granted: 1976-01-06
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Expires: 1994-09-30
Abstract
Abstract A small quantity or low flow rate of a gaseous component is accurately and quickly introduced into the reaction chamber during the process of vapor phase epitaxy. The gaseous component is selectively communicated directly into a primary gaseous flow which passes into the reaction chamber. By maintaining a continuous flow of the gaseous component, the gaseous component can be accurately introduced into the reaction chamber without initially entering the reaction chamber with a large surge of concentration.
Inventors
- 👤 Stuart Talbot Jolly
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 08:59
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/14; Y; Y10; Y10S; Y10S148/00; Y10S148/007; Y10S148/056; Y10S148/057; Y10S148/067; Y10S148/072; Y10S438/00; Y10S438/935
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
102 words
In the process of vapor phase epitaxy, a method for quickly and accurately varying the rate of flow of a gaseous component into the reaction chamber, comprising the steps of: a. establishing at least one primary gaseous flow into said reaction chamber, b. establishing a desired flow of said gaseous component, and c. communicating with gaseous component directly into said primary gaseous flow with said gaseous component passing through substantially no intervening space before reaching said primary gaseous flow such that said gaseous component is swept into said reaction chamber whenever said gaseous component is communicated directly into said primary gaseous flow.
Claim 2
Dependent Claim
102 words
In the process of vapor phase epitaxy, a method for quickly and accurately varying the rate of flow of a gaseous component into the reaction chamber, comprising the steps of: a. establishing at least one primary gaseous flow into said reaction chamber, b. establishing a desired flow of said gaseous component, and c. communicating with gaseous component directly into said primary gaseous flow with said gaseous component passing through substantially no intervening space before reaching said primary gaseous flow such that said gaseous component is swept into said reaction chamber whenever said gaseous component is communicated directly into said primary gaseous flow.
Claim 3
Dependent Claim
31 words
A method in accordance with claim 1 in which said gaseous component is communicated away from the primary gaseous flow when said gaseous component is not required in said reaction chamber.
Claim 4
Dependent Claim
18 words
A method in accordance with claim 2 in which said flow of gaseous component is kept continuously flowing.
Claim 5
Dependent Claim
37 words
A method in accordance with claim 3 in which said flow of gaseous component introduced into said primary gaseous flow is small as compared to the flow of said primary gaseous flow introduced into said reaction chamber.
Claim 6
Dependent Claim
28 words
A method in accordance with claim 4 in which said flow of gaseous component introduced into said reaction chamber is varied without appreciably altering said primary gaseous flow.
Claim 7
Dependent Claim
128 words
In the process of vapor phase epitaxy in which more than one gaseous component is communicated into a reaction chamber for deposition onto a substrate, a method for quickly and accurately varying the rate of flow of at least one of said gaseous components into said reaction chamber, comprising the steps of: a. establishing at least one primary gaseous flow into said reaction chamber, b. establishing a desired flow of said one gaseous component, and c. communicating with one gaseous component directly into said primary gaseous flow with said gaseous component passing through substantially no intervening space before reaching said primary gaseous flow such that said one gaseous component is swept into said reaction chamber whenever said one gaseous component is communicated directly into said primary gaseous flow.
Claim 8
Dependent Claim
128 words
In the process of vapor phase epitaxy in which more than one gaseous component is communicated into a reaction chamber for deposition onto a substrate, a method for quickly and accurately varying the rate of flow of at least one of said gaseous components into said reaction chamber, comprising the steps of: a. establishing at least one primary gaseous flow into said reaction chamber, b. establishing a desired flow of said one gaseous component, and c. communicating with one gaseous component directly into said primary gaseous flow with said gaseous component passing through substantially no intervening space before reaching said primary gaseous flow such that said one gaseous component is swept into said reaction chamber whenever said one gaseous component is communicated directly into said primary gaseous flow.
Claim 9
Dependent Claim
28 words
A method in accordance with claim 6 in which said primary gaseous flow has a maximized velocity such that the overall growth rate on said substrate is maintained.
Claim 10
Dependent Claim
140 words
In the process of vapor phase epitaxy in which more than one gaseous component is communicated into a reaction chamber for deposition onto a substrate, a method for quickly and accurately varying the rate of flow of at least one of said gaseous components into said reaction chamber, comprising the steps of: a. establishing at least one primary gaseous flow through a control member and into said reaction chamber, b. establishing a desired flow of said one gaseous component through said control member, and c. communicating said one gaseous component directly into said primary gaseous flow in said control member with said gaseous component passing through substantially no intervening space before reaching said primary gaseous flow such that one gaseous component is swept into said reaction chamber whenever said one gaseous component is communicated directly into said primary gaseous flow.
Claim 11
Dependent Claim
140 words
In the process of vapor phase epitaxy in which more than one gaseous component is communicated into a reaction chamber for deposition onto a substrate, a method for quickly and accurately varying the rate of flow of at least one of said gaseous components into said reaction chamber, comprising the steps of: a. establishing at least one primary gaseous flow through a control member and into said reaction chamber, b. establishing a desired flow of said one gaseous component through said control member, and c. communicating said one gaseous component directly into said primary gaseous flow in said control member with said gaseous component passing through substantially no intervening space before reaching said primary gaseous flow such that one gaseous component is swept into said reaction chamber whenever said one gaseous component is communicated directly into said primary gaseous flow.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-01-05 | 1979-07-07 | 1980-01-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-01-05 | 1983-07-07 | 1984-01-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-01-05 | 1987-07-07 | 1988-01-06 | $7700.00 | Window Closed / Lapsed |