US3366516A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making a semiconductor crystal body
Assignee: Merck and Co Inc
•
Filing: 1964-04-13
•
Granted: 1968-01-30
•
Expires: 1984-04-13
Abstract
No abstract record available.
Inventors
- 👤 William J Mcaleer
- 👤 Pollak Peter Immanuel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 02:40
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45561; C30; C30B; C30B25/00; C30B25/02; C30B25/14; C30B29/00; C30B29/02; C30B29/06; H; H10; H10P; H10P95/00; H10P14/00; H10P14/20; H10P14/24; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; Y; Y10; Y10S; Y10S148/00; Y10S148/115; Y10S148/135
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
94 words
IN THE METHOD OF PRECIPITATING A LAYER OF MONOCRYSTALLINE SEMICONDUCTOR MATERIAL ON A DISC-SHAPED SUBSTRATE BODY, PARTICLUARLY OF THE SAME SEMICONDUCTOR MATERIAL, WHICH IS HEATED IN A FLOWING REACTION GAS, SUITABLE FOR PRECIPITATING A SEMICONDUCTOR AT INCREASED TEMPERATURE, THEREBY COATING THE BODY WITH A LAYER OF MONOCRYSTALLINE GROWN SEMICONDUCTOR MATERIAL, THE IMPROVEMENT WHICH COMPRISES SUSPENDING THE DISC-SHAPED SUBSTRATE FROM ITS UPPER SIDE IN A REACTION GAS VESSEL AND DIRECTING THE REACTION GAS FROM BELOW AGAINST THE HEATED LOWER SURFACE OF THE SUBSTRATE, WHEREBY PRECIPITATION IS EFFECTED FROM THE REACTION GAS AT SAID LOWER SURFACE.
Claim 2
Dependent Claim
94 words
IN THE METHOD OF PRECIPITATING A LAYER OF MONOCRYSTALLINE SEMICONDUCTOR MATERIAL ON A DISC-SHAPED SUBSTRATE BODY, PARTICLUARLY OF THE SAME SEMICONDUCTOR MATERIAL, WHICH IS HEATED IN A FLOWING REACTION GAS, SUITABLE FOR PRECIPITATING A SEMICONDUCTOR AT INCREASED TEMPERATURE, THEREBY COATING THE BODY WITH A LAYER OF MONOCRYSTALLINE GROWN SEMICONDUCTOR MATERIAL, THE IMPROVEMENT WHICH COMPRISES SUSPENDING THE DISC-SHAPED SUBSTRATE FROM ITS UPPER SIDE IN A REACTION GAS VESSEL AND DIRECTING THE REACTION GAS FROM BELOW AGAINST THE HEATED LOWER SURFACE OF THE SUBSTRATE, WHEREBY PRECIPITATION IS EFFECTED FROM THE REACTION GAS AT SAID LOWER SURFACE.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-01-29 | 1971-07-31 | 1972-01-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-01-29 | 1975-07-31 | 1976-01-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-01-29 | 1979-07-31 | 1980-01-30 | $7700.00 | Window Closed / Lapsed |