US2895858A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing semiconductor crystal bodies
Assignee: Raytheon Co
•
Filing: 1955-06-21
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Granted: 1959-07-21
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Expires: 1975-06-21
Abstract
No abstract record available.
Inventors
- 👤 Raymond C Sangster
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-22 20:03
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B25/00; C30B25/02; Y; Y10; Y10S; Y10S117/00; Y10S117/906
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
93 words
THE METHOD OF FORMING A SILICON CRYSTAL BODY HAVING AT LEAST ONE P-N JUNCTION THEREIN COMPRISING: SUSPENDING A A CRYSTALLORGRPHICALLY ORIENTED SILICON FILAMENT OF A FIRST CONDUCTIVITY TYPE IN A REACTION CHAMBER, SUSPENDING A METALLIC FILAMENT IN SAID REACTION CHAMBER, PASSING A VAPOR MIXTURE OF SILICON TETRABROMIDE, HYDROGEN AND AN ACTIVE IMPURITY HALIDE THROUGH SAID REACTION CHAMBER; AND HEATING SAID SILICON FILAMENT AND SAID METALLIC FILAMENT TO A TEMPERATURE IN THE RANGE OF THE ORDER OF 1100*C. TO 1350*C., WHEREBY SAID SILICON TETRABROMIDE AND SAID ACTIVE IMPURITY HALIDE ARE DECOMPOSED AT SAID FILAMENT
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1962-07-20 | 1963-01-19 | 1963-07-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1966-07-20 | 1967-01-19 | 1967-07-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1970-07-20 | 1971-01-19 | 1971-07-21 | $7700.00 | Window Closed / Lapsed |