US3131098A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Epitaxial deposition on a substrate placed in a socket of the carrier member
Assignee: Merck and Co Inc
•
Filing: 1961-01-31
•
Granted: 1964-04-28
•
Expires: 1981-01-31
Abstract
No abstract record available.
Inventors
- 👤 Krsek George
- 👤 Walter C Benzing
- 👤 Topas Benjamin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 16:52
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D10/00; H10D99/00; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/115
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
147 words
THE METHOD OF SIMULTANEOUSLY FORMING BY VAPOR DEPOSITION A PLURALITY OF UNIFORM SEMICONDUCTOR BODIES HAVING A PLURALITY OF LAYERS OF SINGLE CRYSTAL SEMICONDUCTOR MATERIAL HAVING DIFFERENT CONDUCTIVITIES AND SEPARATED BY A TRANSITION REGION WHICH COMPRISES THE STEPS OF INTRODUCING A PLURALITY OF WAFERS OF SINGLE CRYSTAL SEMICONDUCTOR MATERIAL HAVING A PREDETERMINED CONDUCTIVITY TYPE AND DEGREE INTO SOCKETS OF A SUPPORT WITHIN A REACTION CHAMBER, HEATING SAID WAFERS TO A REACTION TEMPERATURE, INTRODUCING A DECOMPOSABLE VAPOR COMPRISING SEMICONDUCTOR ATOMS AND ACTIVE IMPURITY ATOMS TO IMPART A PREDETERMINED CONDUCTIVITY TO SAID SEMICONDUCTOR ATOMS INTO SAID CHAMBER, CAUSING SAID VAPOR TO FLOW ABOUT THE EXPOSED SURFACES OF SAID HEATED WAFERS, AND EFFECTING DEPOSITION OF SAID ATOMS FROM THE VAPOR ONTO SAID URFACES TO FORM A UNIFORM SINGLE CRYSTAL LAYER OF SEMICONDUCTOR MATERIAL ON EACH OF SAID WAFERS HAVING A CONDUCTIVITY DIFFERENT FROM THAT OF SAID WAFER ON WHICH DEPOSITION OCCURS.
Claim 2
Independent Claim
147 words
THE METHOD OF SIMULTANEOUSLY FORMING BY VAPOR DEPOSITION A PLURALITY OF UNIFORM SEMICONDUCTOR BODIES HAVING A PLURALITY OF LAYERS OF SINGLE CRYSTAL SEMICONDUCTOR MATERIAL HAVING DIFFERENT CONDUCTIVITIES AND SEPARATED BY A TRANSITION REGION WHICH COMPRISES THE STEPS OF INTRODUCING A PLURALITY OF WAFERS OF SINGLE CRYSTAL SEMICONDUCTOR MATERIAL HAVING A PREDETERMINED CONDUCTIVITY TYPE AND DEGREE INTO SOCKETS OF A SUPPORT WITHIN A REACTION CHAMBER, HEATING SAID WAFERS TO A REACTION TEMPERATURE, INTRODUCING A DECOMPOSABLE VAPOR COMPRISING SEMICONDUCTOR ATOMS AND ACTIVE IMPURITY ATOMS TO IMPART A PREDETERMINED CONDUCTIVITY TO SAID SEMICONDUCTOR ATOMS INTO SAID CHAMBER, CAUSING SAID VAPOR TO FLOW ABOUT THE EXPOSED SURFACES OF SAID HEATED WAFERS, AND EFFECTING DEPOSITION OF SAID ATOMS FROM THE VAPOR ONTO SAID URFACES TO FORM A UNIFORM SINGLE CRYSTAL LAYER OF SEMICONDUCTOR MATERIAL ON EACH OF SAID WAFERS HAVING A CONDUCTIVITY DIFFERENT FROM THAT OF SAID WAFER ON WHICH DEPOSITION OCCURS.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1967-04-28 | 1967-10-28 | 1968-04-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1971-04-28 | 1971-10-28 | 1972-04-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1975-04-28 | 1975-10-28 | 1976-04-28 | $7700.00 | Window Closed / Lapsed |