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Patent USH948H successfully refreshed from Google Patents.
USH948H
Expired / Lapsed
US
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Semiconductor-semiconductor compound insulator-insulator structures
Assignee: United States Department of the Navy
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Filing: 1990-08-17
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Granted: 1991-08-06
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Expires: 2010-08-17
Abstract
Abstract A process for the interdisposition of a semiconductor compound by high dose oxygen ion implantation after a high quality single crystal semiconductor film has been formed on an insulator substrate. Specifically, in one embodiment, after the formation of a single crystal silicon semiconductor film on an insulator substrate of either sapphire or spinel, oxygen ion implantation is formed to create a silicon dioxide layer at the interface between the silicon semiconductor film and the insulator substrate in order to reduce the interface states and form a diffusion barrier between the semiconductor material and the electrical insulator substrate.
Inventors
- 👤 Monti E. Aklufi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:17
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/29; H10P14/2901; H10P14/2921; H10P14/32; H10P14/3202; H10P14/3238; H10P14/38; H10P14/3822
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
119 words
A method of forming an interface between a semiconductor material and an electrical insulator substrate that is a dissimilar material from said semiconductor material wherein said interface is formed for the purpose of reducing the interface states between said semiconductor material and said electrical insulator, comprising the sequential steps of: first, providing an electrical insulator; next, forming a layer of semiconductor material on top of said electrical insulator; and then implanting ions into the region of said semiconductor material that is at the interface between said electrical insulator and said semiconductor material so as to interdispose a semiconductor compound insulator layer between the semiconductor and electrical insulator substrate by converting said region into a compound of said semiconductor material.
Claim 2
Independent Claim
119 words
A method of forming an interface between a semiconductor material and an electrical insulator substrate that is a dissimilar material from said semiconductor material wherein said interface is formed for the purpose of reducing the interface states between said semiconductor material and said electrical insulator, comprising the sequential steps of: first, providing an electrical insulator; next, forming a layer of semiconductor material on top of said electrical insulator; and then implanting ions into the region of said semiconductor material that is at the interface between said electrical insulator and said semiconductor material so as to interdispose a semiconductor compound insulator layer between the semiconductor and electrical insulator substrate by converting said region into a compound of said semiconductor material.
Claim 3
Independent Claim
117 words
A method of forming an interface between a semiconductor material and an electrical insulator substrate that is a dissimilar material from said semiconductor material wherein said interface is formed for the purpose of reducing interface states between said semiconductor material and said electrical insulator, comprising the sequential steps of: first, providing an electrical insulator; next, forming a layer of semiconductor material on top of said electrical insulator; and then implanting ions into the region of said semiconductor material that is at the interface between said electrical insulator and said semiconductor material so as to interdispose a semiconductor oxide layer between the semiconductor and electrical insulator substrate by converting said region into a compound of said semiconductor material.
Claim 4
Independent Claim
117 words
A method of forming an interface between a semiconductor material and an electrical insulator substrate that is a dissimilar material from said semiconductor material wherein said interface is formed for the purpose of reducing interface states between said semiconductor material and said electrical insulator, comprising the sequential steps of: first, providing an electrical insulator; next, forming a layer of semiconductor material on top of said electrical insulator; and then implanting ions into the region of said semiconductor material that is at the interface between said electrical insulator and said semiconductor material so as to interdispose a semiconductor oxide layer between the semiconductor and electrical insulator substrate by converting said region into a compound of said semiconductor material.
Claim 5
Dependent Claim
19 words
The method of claim 2 wherein: said electrical insulator is selected from the group consisting of sapphire and spinel.
Claim 6
Dependent Claim
10 words
The method of claim 3 wherein said semiconductor is silicon.
Claim 7
Dependent Claim
10 words
The method of claim 2 wherein said semiconductor is silicon.
Claim 8
Dependent Claim
29 words
The method of claim 3 further comprising the steps of: maintaining the temperature of said insulator and semiconductor material on the order of 500° C. during said ion implantation.
Claim 9
Dependent Claim
31 words
The method of claim 6 further comprising the step of: annealing said insulator and semiconductor material following said ion implantation for approximately two hours at a temperature of approximately 1275° C.
Claim 10
Dependent Claim
29 words
The method of claim 2 further comprising the step of: maintaining the temperature of said insulator and semiconductor material on the order of 500° C. during said ion implantation.
Claim 11
Dependent Claim
31 words
The method of claim 8 further comprising the step of: annealing said insulator and semiconductor material following said ion implantation for approximately two hours at a temperature of approximately 1275° C.
Claim 12
Dependent Claim
53 words
A semiconductor insulator structure comprising: a substrate selected from the group comprising sapphire or spinel; a film of semiconductor material formed over said substrate wherein said semiconductor film is a dissimilar material from said substrate; and an oxide of said semiconductor material interdisposed at the interface between said semiconductor film and said substrate.
Claim 13
Dependent Claim
53 words
A semiconductor insulator structure comprising: a substrate selected from the group comprising sapphire or spinel; a film of semiconductor material formed over said substrate wherein said semiconductor film is a dissimilar material from said substrate; and an oxide of said semiconductor material interdisposed at the interface between said semiconductor film and said substrate.
Claim 14
Dependent Claim
10 words
The structure of claim 10 wherein: said film is silicon.
Claim 15
Dependent Claim
11 words
The structure of claim 11 wherein: said oxide is silicon dioxide.
Claim 16
Independent Claim
123 words
A method of forming an interface between a semiconductor material and an electrical insulator substrate that is a dissimilar material from said semiconductor material wherein said interface is formed for the purpose of reducing the interface states and forming a diffusion barrier between said semiconductor material and said electrical insulator, comprising the sequential steps of: first, providing an electrical insulator; next, forming a layer of semiconductor material on top of said electrical insulator; and then implanting ions into the region of said semiconductor material that is at the interface between said electrical insulator and said semiconductor material so as to interdispose a semiconductor oxide layer between the semiconductor and electrical insulator substrate by converting said region into a compound of said semiconductor material.
Claim 17
Independent Claim
123 words
A method of forming an interface between a semiconductor material and an electrical insulator substrate that is a dissimilar material from said semiconductor material wherein said interface is formed for the purpose of reducing the interface states and forming a diffusion barrier between said semiconductor material and said electrical insulator, comprising the sequential steps of: first, providing an electrical insulator; next, forming a layer of semiconductor material on top of said electrical insulator; and then implanting ions into the region of said semiconductor material that is at the interface between said electrical insulator and said semiconductor material so as to interdispose a semiconductor oxide layer between the semiconductor and electrical insulator substrate by converting said region into a compound of said semiconductor material.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-08-05 | 1995-02-04 | 1995-08-06 | $2000.00 | Window Closed / Lapsed |
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