Method of manufacturing insulated gate semiconductor devices by high pressure thermal oxidation with water vapor

Claim 1

A method of manufacturing an insulated gate type semiconductor device in an island of semiconductor material with a channel length of less than 40 microns and a low leakage current of less than 10 -9 A at an applied source to drain potential of 5 volts and with an unbiased gate, said method comprising the steps of: forming a single crystal semiconductor film on an insulating single crystal substrate; selectively forming a film masking against oxidation on the surface of said single crystal semiconductor film, and thermally oxidizing a part of said single crystal semiconductor film, in a region which is not masked with said film masking against oxidation, down to the surface of said insulating single crystal substrate, to form said island by arranging said insulating substrate with said single crystal semiconductor film in a water vapor atmosphere having a pressure in the range from 3 to 15 kg/cm 2 and a temperature in the range from 700° C. to 1000° C., said oxidizing resulting in said device having said low leakage current; forming source and drain regions of said device in said island to provide each channel length, forming the gate insulator or said device over said channel region, and forming gate, source and drain electrodes of said device.

Claim 2

A method of manufacturing an insulated gate type semiconductor device in an island of semiconductor material with a channel length of less than 40 microns and a low leakage current of less than 10 -9 A at an applied source to drain potential of 5 volts and with an unbiased gate, said method comprising the steps of: forming a single crystal semiconductor film on an insulating single crystal substrate; selectively forming a film masking against oxidation on the surface of said single crystal semiconductor film, and thermally oxidizing a part of said single crystal semiconductor film, in a region which is not masked with said film masking against oxidation, down to the surface of said insulating single crystal substrate, to form said island by arranging said insulating substrate with said single crystal semiconductor film in a water vapor atmosphere having a pressure in the range from 3 to 15 kg/cm 2 and a temperature in the range from 700° C. to 1000° C., said oxidizing resulting in said device having said low leakage current; forming source and drain regions of said device in said island to provide each channel length, forming the gate insulator or said device over said channel region, and forming gate, source and drain electrodes of said device.

Claim 10

A method of manufacturing an insulated gate type semiconductor device having a maximum channel length of 6 microns and a maximum leakage current of less than 10 -8 A at an applied source to drain potential of 5 volts and with an unbiased gate, said method comprising the steps of: forming a single crystal semiconductor film on an insulating single crystal substrate; selectively forming a film masking against oxidation on the surface of said single crystal semiconductor film, thermally oxidizing said single crystal semiconductor film in a region which is not masked with said film masking against oxidation, down to the surface of said insulating single crystal substrate, to form said island by arranging said insulating substrate with said single crystal semiconductor film in a water vapor atmosphere having a pressure in the range 3 to 15 kg/cm 2 at a temperature in the range from 700° to 1000° C., and forming said device with said source and drain regions and said gate to provide the device with said channel length and leakage current not larger than the respective maximum values.

Claim 11

A method of manufacturing an insulated gate type semiconductor device having a maximum channel length of 6 microns and a maximum leakage current of less than 10 -8 A at an applied source to drain potential of 5 volts and with an unbiased gate, said method comprising the steps of: forming a single crystal semiconductor film on an insulating single crystal substrate; selectively forming a film masking against oxidation on the surface of said single crystal semiconductor film, thermally oxidizing said single crystal semiconductor film in a region which is not masked with said film masking against oxidation, down to the surface of said insulating single crystal substrate, to form said island by arranging said insulating substrate with said single crystal semiconductor film in a water vapor atmosphere having a pressure in the range 3 to 15 kg/cm 2 at a temperature in the range from 700° to 1000° C., and forming said device with said source and drain regions and said gate to provide the device with said channel length and leakage current not larger than the respective maximum values.