US4126731A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Sapphire single crystal substrate for semiconductor devices
Assignee: Tokin Corp
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Filing: 1975-10-24
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Granted: 1978-11-21
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Expires: 1995-10-24
Abstract
Abstract A single crystal substrate for epitaxial growth thereon of a semiconductor layer. The substrate consisting essentially of sapphire (aluminium oxide) and at least one additive selected from a group consisting of oxides of gallium, titanium, scandium, and others. A 87 mol percent content of gallium oxide is most preferred for a silicon layer. Similarly, an additive and its content should most preferably be selected depending on the semiconductor, which may be gallium phosphide, aluminium phosphide, or zinc sulphide.
Inventors
- 👤 Jun-ichi Nishizawa
- 👤 Mitsuhiro Kimura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 17:31
CPC Classifications
C; C30; C30B; C30B19/00; C30B19/12; H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2918; H10P14/2921; H10P14/2926; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y10; Y10S; Y10S117/00; Y10S117/901; Y10S117/902; Y10S148/00; Y10S148/072; Y10S148/079; Y10S148/097; Y10S148/15
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
75 words
A sapphire-containing rhombohedral single crystal substrate for epitaxial growth thereon of a layer of a semiconductor, said single crystal substrate being an electrically insulating material consisting essentially of Ti 2 O 3 in an amount between 40 and 65 mol % with the balance being essentially Al 2 O 3 , whereby the lattice misfit coefficient between said substrate and an epitaxially grown semiconductor thereon is not more than about 1% along the [1011] axis.
Claim 2
Dependent Claim
75 words
A sapphire-containing rhombohedral single crystal substrate for epitaxial growth thereon of a layer of a semiconductor, said single crystal substrate being an electrically insulating material consisting essentially of Ti 2 O 3 in an amount between 40 and 65 mol % with the balance being essentially Al 2 O 3 , whereby the lattice misfit coefficient between said substrate and an epitaxially grown semiconductor thereon is not more than about 1% along the [1011] axis.
Claim 3
Dependent Claim
15 words
The substrate of claim 1 wherein said misfit coefficient is not more than about 0.5%.
Claim 4
Dependent Claim
18 words
The substrate of claim 1 having an epitaxially grown single crystal semiconductor on a surface of said substrate.
Claim 5
Dependent Claim
41 words
A substrate as claimed in claim 1 wherein said electrically insulating material consists of from 58 to 45 mol percent of the aluminum oxide and from 42 to 55 mol percent of the titanium oxide, and wherein said semiconductor is silicon.
Claim 6
Dependent Claim
19 words
The substrate of claim 4 having an epitaxially grown single crystal silicon semiconductor on a surface of said substrate.
Claim 7
Dependent Claim
29 words
A substrate as claimed in claim 4, wherein said electrically insulating material consists of 51 mol percent of the aluminium oxide and 49 mol percent of the titanium oxide.
Claim 8
Dependent Claim
42 words
A substrate as claimed in claim 1, wherein said electrically insulating material consists of from 50 to 38 mol percent of the aluminum oxide and from 50 to 62 mol percent of the titanium oxide, and wherein said semiconductor is gallium phosphide.
Claim 9
Dependent Claim
20 words
The substrate of claim 7 having an epitaxially grown single crystal gallium phosphide semiconductor on a surface of said substrate.
Claim 10
Dependent Claim
29 words
A substrate as claimed in claim 7, wherein said electrically insulating material consists of 44 mol percent of the aluminium oxide and 56 mol percent of the titanium oxide.
Claim 11
Dependent Claim
42 words
A substrate as claimed in claim 1, wherein said electrically insulating material consists of from 48 to 35 mol percent of the aluminum oxide and from 52 to 65 mol percent of the titanium oxide, and wherein said semiconductor is aluminum phosphate.
Claim 12
Dependent Claim
20 words
The substrate of claim 10 having an epitaxially grown single crystal aluminum phosphide semiconductor on a surface of said substrate.
Claim 13
Dependent Claim
29 words
A substrate as claimed in claim 10, wherein said electrically insulating material consists of 42 mol percent of the aluminum oxide and 58 mol percent of the titanium oxide.
Claim 14
Dependent Claim
42 words
A substrate as claimed in claim 1, wherein said electrically insulating material consists of from 60 to 47 mol percent of the aluminum oxide and from 40 to 53 mol percent of the titanium oxide, and wherein said semiconductor is zinc sulphide.
Claim 15
Dependent Claim
20 words
The substrate of claim 13 having an epitaxially grown single crystal zinc sulphide semiconductor on a surface of said substrate.
Claim 16
Dependent Claim
29 words
A substrate as claimed in claim 13, wherein said electrically insulating material consists of 53 mol percent of the aluminium oxide and 47 mol percent of the titanium oxide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-11-20 | 1982-05-22 | 1982-11-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-11-20 | 1986-05-22 | 1986-11-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-11-20 | 1990-05-22 | 1990-11-21 | $7700.00 | Window Closed / Lapsed |