Patent US7906413B2 successfully refreshed from Google Patents.
US7906413B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Abrupt “delta-like” doping in Si and SiGe films by UHV-CVD
Assignee: GlobalFoundries Inc
•
Filing: 2006-04-28
•
Granted: 2011-03-15
•
Expires: 2026-04-28
Abstract
Abstract A structure and method of forming an abrupt doping profile is described incorporating a substrate, a first epitaxial layer of Ge less than the critical thickness having a P or As concentration greater than 5×10 19 atoms/cc, and a second epitaxial layer having a change in concentration in its first 40 from the first layer of greater than 1×10 19 P atoms/cc. Alternatively, a layer of SiGe having a Ge content greater than 0.5 may be selectively amorphized and recrystalized with respect to other layers in a layered structure. The invention overcomes the problem of forming abrupt phosphorus profiles in Si and SiGe layers or films in semiconductor structures such as CMOS, MODFET's, and HBT's.
Inventors
- 👤 Frank Cardone
- 👤 Jack Oon Chu
- 👤 Khalid EzzEldin Ismail
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 23:31
CPC Classifications
H; H10; H10P; H10P10/00; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D30/00; H10D30/01; H10D30/015; H10D30/021; H10D30/0223; H10D30/0227; H10D30/027; H10D30/0275; H10D30/60; H10D30/601; H10D30/751; H10D30/791; H10D30/798; H10D62/00; H10D62/60; H10D64/00; H10D64/20; H10D64/23; H10D64/251; H10D64/258; H10D64/259; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P30/208; H10D30/0212; H10D62/80; H10D62/82; H10D62/822
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
52 words
A method for forming abrupt doping within a semiconductor layered structure comprising: providing a single crystalline substrate including a first epitaxial layer having a high Ge content greater than 0.5; selectively amorphizing said first epitaxial layer to form an amorphized first layer; and crystallizing said amorphized first layer by solid phase regrowth.
Claim 2
Independent Claim
52 words
A method for forming abrupt doping within a semiconductor layered structure comprising: providing a single crystalline substrate including a first epitaxial layer having a high Ge content greater than 0.5; selectively amorphizing said first epitaxial layer to form an amorphized first layer; and crystallizing said amorphized first layer by solid phase regrowth.
Claim 3
Dependent Claim
17 words
The method of claim 1 wherein said step of selectively amorphizing includes a step of ion implantation.
Claim 4
Dependent Claim
34 words
The method of claim 1 wherein said step of selectively amorphizing includes first forming second and third layers about said first layer, said second and third layers having a Ge content less than 0.5.
Claim 5
Dependent Claim
14 words
The method of claim 3 , wherein said second layer is an epitaxial layer.
Claim 6
Dependent Claim
14 words
The method of claim 4 , wherein said third layer is an epitaxial layer.
Claim 7
Dependent Claim
30 words
The method of claim 5 , wherein said second layer is formed directly on said first epitaxial layer, and wherein said third layer is formed directly on said second layer.
Claim 8
Dependent Claim
26 words
The method of claim 6 , wherein at least a portion of said first epitaxial layer has a dopant concentration greater than 1×10 19 dopant atoms/cc.
Claim 9
Dependent Claim
29 words
The method of claim 7 , wherein said second and third layers are grown with a background doping profile that drops or decreases to less than 5×10 16 atoms/cc.
Claim 10
Dependent Claim
19 words
The method of claim 7 , wherein said first epitaxial layer includes a dopant selected from phosphorus and arsenic.
Claim 11
Dependent Claim
33 words
The method of claim 3 , wherein at least one of said first epitaxial layer, said second layer, and said third layer is deposited in a ultra-high vacuum chemical vapor deposition (UHV-CVD) reactor.
Claim 12
Dependent Claim
29 words
The method of claim 10 , wherein said first epitaxial layer, said second layer, and said third layer are deposited in said ultra-high vacuum chemical vapor deposition (UHV-CVD) reactor.
Claim 13
Dependent Claim
27 words
The method of claim 1 wherein said step of selectively amorphizing includes the step of first forming said first layer having a Ge content greater than 0.5.
Claim 14
Dependent Claim
22 words
The method of claim 1 , wherein said first epitaxial layer is deposited in a ultra-high vacuum chemical vapor deposition (UHV-CVD) reactor.
References Cited (Backward Citations)
US5298452A
Cited
JPS63168021A
Cited
US4863877A
Cited
US5047365A
Cited
US5241197A
Cited
US5227644A
Cited
US5089428A
Cited
US5628834A
Cited
US5316958A
Cited
US5181964A
Cited
EP0494395A2
Cited
US5659187A
Cited
US5949105A
Cited
US5607511A
Cited
JPH0661489A
Cited
US5440152A
Cited
US5616515A
Cited
US6383899B1
Cited
JPH10288328A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2014-03-14 | 2014-09-13 | 2015-03-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2018-03-14 | 2018-09-13 | 2019-03-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2022-03-14 | 2022-09-13 | 2023-03-15 | $7700.00 | Window Closed / Lapsed |