US7906413B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Abrupt “delta-like” doping in Si and SiGe films by UHV-CVD
Assignee: GlobalFoundries Inc
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Filing: 2006-04-28
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Granted: 2011-03-15
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Expires: 2026-04-28
Abstract
Abstract A structure and method of forming an abrupt doping profile is described incorporating a substrate, a first epitaxial layer of Ge less than the critical thickness having a P or As concentration greater than 5×10 19 atoms/cc, and a second epitaxial layer having a change in concentration in its first 40 from the first layer of greater than 1×10 19 P atoms/cc. Alternatively, a layer of SiGe having a Ge content greater than 0.5 may be selectively amorphized and recrystalized with respect to other layers in a layered structure. The invention overcomes the problem of forming abrupt phosphorus profiles in Si and SiGe layers or films in semiconductor structures such as CMOS, MODFET's, and HBT's.
Inventors
- 👤 Frank Cardone
- 👤 Jack Oon Chu
- 👤 Khalid EzzEldin Ismail
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 13:01
CPC Classifications
H; H10; H10P; H10P10/00; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D30/00; H10D30/01; H10D30/015; H10D30/021; H10D30/0223; H10D30/0227; H10D30/027; H10D30/0275; H10D30/60; H10D30/601; H10D30/751; H10D30/791; H10D30/798; H10D62/00; H10D62/60; H10D64/00; H10D64/20; H10D64/23; H10D64/251; H10D64/258; H10D64/259; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P30/208; H10D30/0212; H10D62/80; H10D62/82; H10D62/822
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
52 words
A method for forming abrupt doping within a semiconductor layered structure comprising: providing a single crystalline substrate including a first epitaxial layer having a high Ge content greater than 0.5; selectively amorphizing said first epitaxial layer to form an amorphized first layer; and crystallizing said amorphized first layer by solid phase regrowth.
Claim 2
Independent Claim
52 words
A method for forming abrupt doping within a semiconductor layered structure comprising: providing a single crystalline substrate including a first epitaxial layer having a high Ge content greater than 0.5; selectively amorphizing said first epitaxial layer to form an amorphized first layer; and crystallizing said amorphized first layer by solid phase regrowth.
Claim 3
Dependent Claim
17 words
The method of claim 1 wherein said step of selectively amorphizing includes a step of ion implantation.
Claim 4
Dependent Claim
34 words
The method of claim 1 wherein said step of selectively amorphizing includes first forming second and third layers about said first layer, said second and third layers having a Ge content less than 0.5.
Claim 5
Dependent Claim
14 words
The method of claim 3 , wherein said second layer is an epitaxial layer.
Claim 6
Dependent Claim
14 words
The method of claim 4 , wherein said third layer is an epitaxial layer.
Claim 7
Dependent Claim
30 words
The method of claim 5 , wherein said second layer is formed directly on said first epitaxial layer, and wherein said third layer is formed directly on said second layer.
Claim 8
Dependent Claim
26 words
The method of claim 6 , wherein at least a portion of said first epitaxial layer has a dopant concentration greater than 1×10 19 dopant atoms/cc.
Claim 9
Dependent Claim
29 words
The method of claim 7 , wherein said second and third layers are grown with a background doping profile that drops or decreases to less than 5×10 16 atoms/cc.
Claim 10
Dependent Claim
19 words
The method of claim 7 , wherein said first epitaxial layer includes a dopant selected from phosphorus and arsenic.
Claim 11
Dependent Claim
33 words
The method of claim 3 , wherein at least one of said first epitaxial layer, said second layer, and said third layer is deposited in a ultra-high vacuum chemical vapor deposition (UHV-CVD) reactor.
Claim 12
Dependent Claim
29 words
The method of claim 10 , wherein said first epitaxial layer, said second layer, and said third layer are deposited in said ultra-high vacuum chemical vapor deposition (UHV-CVD) reactor.
Claim 13
Dependent Claim
27 words
The method of claim 1 wherein said step of selectively amorphizing includes the step of first forming said first layer having a Ge content greater than 0.5.
Claim 14
Dependent Claim
22 words
The method of claim 1 , wherein said first epitaxial layer is deposited in a ultra-high vacuum chemical vapor deposition (UHV-CVD) reactor.
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