Patent US3877949A successfully refreshed from Google Patents.
Patent US7685556B2 successfully refreshed from Google Patents.
US7685556B2
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Mask data correction method, photomask manufacturing method, computer program, optical image prediction method, resist pattern shape prediction method, and semiconductor device manufacturing method
Assignee: Toshiba Corp
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Filing: 2005-02-23
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Granted: 2010-03-23
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Expires: 2025-02-23
Abstract
Abstract According to an aspect of the invention, there is provided a mask data correction method used when forming a photomask used in a photolithography process, comprising correcting mask data on the basis of simulation performed by using information including nonuniformity of an illumination luminance distribution in an exposure apparatus which uses the photomask formed by using the mask data obtained by the correction result.
Inventors
- 👤 Kazuya Fukuhara
- 👤 Daisuke Kawamura
- 👤 Shoji Mimotogi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 17:45
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70483; G03F7/70491; G03F7/705; G03F1/00; G03F1/36; G03F1/68; G03F1/70; G03F7/70058; G03F7/70133; G03F7/70425; G03F7/70433
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
87 words
A mask data correction method used when forming a photomask used in a photolithography process, comprising: obtaining a process parameter which represents an effect of a resist process on the basis of a first simulation performed by a processor using information including a non-uniformity in an illumination luminance distribution in a first exposure apparatus; and correcting mask data on the basis of a second simulation performed by processor using the process parameter and information including a non-uniformity in an illumination luminance distribution in a second exposure apparatus.
Claim 2
Dependent Claim
87 words
A mask data correction method used when forming a photomask used in a photolithography process, comprising: obtaining a process parameter which represents an effect of a resist process on the basis of a first simulation performed by a processor using information including a non-uniformity in an illumination luminance distribution in a first exposure apparatus; and correcting mask data on the basis of a second simulation performed by processor using the process parameter and information including a non-uniformity in an illumination luminance distribution in a second exposure apparatus.
Claim 3
Dependent Claim
34 words
The method according to claim 1 , wherein the information including the non-uniformity in the illumination luminance distribution shows that a luminance is not uniform in an area where the luminance is not zero.
Claim 4
Dependent Claim
43 words
The method according to claim 1 , wherein the information including the non-uniformity in the illumination luminance distribution is a measurement value or a process value of the measurement value, and represents the illumination luminance distribution for illuminating a position to be corrected.
Claim 5
Dependent Claim
76 words
The method according to claim 1 , wherein obtaining the process parameter comprises: forming a resist pattern in a lithography process; measuring a shape of the resist pattern; performing the first simulation by using the information including the non-uniformity in the illumination luminance distribution in the first exposure apparatus; and calculating the process parameter of the first simulation in which a pattern dimension by the first simulation is closest to a measurement value in the measurement.
Claim 6
Dependent Claim
34 words
The method according to claim 4 , wherein the information including the non-uniformity in the illumination luminance distribution shows that a luminance is not uniform in an area where the luminance is not zero.
Claim 7
Dependent Claim
31 words
The method according to claim 4 , wherein the illumination luminance distribution is a distribution at a position corresponding to a target pattern in an exposure area of the exposure apparatus.
Claim 8
Dependent Claim
63 words
The method according to claim 4 , wherein a simulation is performed for correcting the mask data, the simulation using the calculated process parameter and the information including the non-uniformity in the illumination luminance distribution in the exposure apparatus, the exposure apparatus being used when the photomask is used in the photolithography process, the photomask being generated by using the corrected mask data.
Claim 9
Dependent Claim
30 words
The method according to claim 7 , wherein the information including the non-uniformity in the illumination luminance distribution is a measurement value or a process value of the measurement value.
Claim 10
Dependent Claim
31 words
The method according to claim 7 , the illumination luminance distribution is a distribution at a position corresponding to a mask correction target in an exposure area of the exposure apparatus.
Claim 11
Dependent Claim
19 words
A photomask manufacturing method of manufacturing a photomask from mask data corrected in a method of claim 4 .
Claim 12
Dependent Claim
22 words
A semiconductor device manufacturing method of manufacturing a semiconductor device by using a photomask manufactured from the method of claim 10 .
Claim 13
Dependent Claim
25 words
A semiconductor device manufacturing method of manufacturing a semiconductor device by using mask data corrected in a mask data correction method of claim 4 .
Claim 14
Dependent Claim
19 words
A photomask manufacturing method of manufacturing a photomask from mask data corrected in a method of claim 1 .
Claim 15
Dependent Claim
22 words
A semiconductor device manufacturing method of manufacturing a semiconductor device by using a photomask manufactured from the method of claim 13 .
Claim 16
Dependent Claim
25 words
A semiconductor device manufacturing method of manufacturing a semiconductor device by using mask data corrected in a mask data correction method of claim 1 .
Claim 17
Dependent Claim
101 words
A computer-readable medium embodying a computer program that, when executed, causes a computer to perform a mask data correction method used when forming a photomask used in a photolithography process, the method comprising: obtaining a process parameter which represents an effect of a resist process on the basis of a first simulation performed by using information including a non-uniformity in an illumination luminance distribution in a first exposure apparatus; and correcting mask data on the basis of a second simulation performed by using the process parameter and information including a non-uniformity in an illumination luminance distribution in a second exposure apparatus.
Claim 18
Dependent Claim
101 words
A computer-readable medium embodying a computer program that, when executed, causes a computer to perform a mask data correction method used when forming a photomask used in a photolithography process, the method comprising: obtaining a process parameter which represents an effect of a resist process on the basis of a first simulation performed by using information including a non-uniformity in an illumination luminance distribution in a first exposure apparatus; and correcting mask data on the basis of a second simulation performed by using the process parameter and information including a non-uniformity in an illumination luminance distribution in a second exposure apparatus.
Claim 19
Dependent Claim
79 words
The computer-readable medium according to claim 16 , wherein obtaining the process parameter comprises: forming a resist pattern in a lithography process; measuring a shape of the resist pattern; performing the first simulation by using the information including the non-uniformity in the illumination luminance distribution in the first exposure apparatus; and calculating the process parameter of the first simulation in which a pattern dimensional value obtained by the first simulation is closest to the measurement value in the measurement.
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