Method and device for determining the properties of an integrated circuit

Claim 3

The method according to claim 1 , further comprising utilizing an intensity distribution in the resist of the form I(x,y,z)=I(x,y)e −αz .

Claim 4

The method according to claim 1 , the step of determining the simulated resist image comprising utilizing γ>>1.

Claim 5

A method according to claim 1 , the step of determining the simulated resist image comprising utilizing an equation of the form S ⁡ ( x , y , z ) = 1 r 0 ⁢ γ ⁢ ( E 0 EI ⁡ ( x , y , z ) ) γ ⁢ 1 ( ∂ ln ⁢ ⁢ I ∂ x ) 2 + ( ∂ ln ⁢ ⁢ I ∂ y ) 2 + ( ∂ ln ⁢ ⁢ I ∂ z ) 2 .

Claim 6

The method according to claim 1 , the step of determining the simulated resist image comprising utilizing an equation of the form z ⁡ ( x , y ) = d ⁡ ( 1 - 1 αγ ⁢ ⁢ d ⁢ ln ⁡ ( 1 + D eff ⁢ γ ⁡ ( EI ⁡ ( x , y ) E 0 ) γ ⁢ F ⁡ ( x , y ) ) ) ⁢ ⁢ wherein F ⁡ ( x , y ) = ( ∂ ln ⁢ ⁢ I ⁡ ( x , y ) ∂ x ) 2 + ( ∂ ln ⁢ ⁢ I ⁡ ( x , y ) ∂ y ) 2 + α 2 .

Claim 7

The method according to claim 1 , further comprising processing a hierarchically structured data input set describing the design and providing the simulated resist image in the form of a hierarchical structuring.

Claim 8

Apparatus for determining integrity of an integrated circuit comprising: means for determining a simulated resist image of the integrated circuit, the simulated resist image being determined by an equation in the form ( ∂ S ∂ x ) 2 + ( ∂ S ∂ y ) 2 + ( ∂ S ∂ z ) 2 = ( I ⁡ ( 0 ) I ⁡ ( x , y , z ) ) 2 ⁢ γ ⁢ ( 1 r 0 ) 2 , wherein I(x,y,z) is intensity of light used to illuminate the resist at point (x,y,z) of the resist, I(0) is reference intensity obtainable from equation I(0)=E 0 /E, where E is incident light dose in large exposed areas of the resist and E 0 is a threshold , γ is a non-linearity parameter describing non-linearity of one of a developing or resist process, and r 0 is a factor obtainable from equation D eff =r 0 ·t, wherein D eff is effective resist thickness and t is developing time; and means for comparing the simulated resist image with a design of the circuit to make predictions concerning a circuit obtainable in a manufacturing process, the means for comparing detecting deviations between the simulated resist image and the design which differ from a rated value by more than a tolerance value, the simulated resist image having a surface function S(x,y,z) describing a uniform propagation of a surface in a resist to be simulated under illumination.

Claim 9

Apparatus for determining integrity of an integrated circuit comprising: means for determining a simulated resist image of the integrated circuit, the simulated resist image being determined by an equation in the form ( ∂ S ∂ x ) 2 + ( ∂ S ∂ y ) 2 + ( ∂ S ∂ z ) 2 = ( I ⁡ ( 0 ) I ⁡ ( x , y , z ) ) 2 ⁢ γ ⁢ ( 1 r 0 ) 2 , wherein I(x,y,z) is intensity of light used to illuminate the resist at point (x,y,z) of the resist, I(0) is reference intensity obtainable from equation I(0)=E 0 /E, where E is incident light dose in large exposed areas of the resist and E 0 is a threshold , γ is a non-linearity parameter describing non-linearity of one of a developing or resist process, and r 0 is a factor obtainable from equation D eff =r 0 ·t, wherein D eff is effective resist thickness and t is developing time; and means for comparing the simulated resist image with a design of the circuit to make predictions concerning a circuit obtainable in a manufacturing process, the means for comparing detecting deviations between the simulated resist image and the design which differ from a rated value by more than a tolerance value, the simulated resist image having a surface function S(x,y,z) describing a uniform propagation of a surface in a resist to be simulated under illumination.

Claim 10

The apparatus according to claim 7 , an intensity distribution in the resist being of the form I(x,y,z)=I(x,y)e −αz .

Claim 11

The apparatus according to claim 7 , wherein γ>>1.

Claim 12

The apparatus according to claim 7 , the means for determining utilizing an equation of the form S ⁡ ( x , y , z ) = 1 r 0 ⁢ γ ⁢ ( E 0 EI ⁡ ( x , y , z ) ) γ ⁢ 1 ( ∂ ln ⁢ ⁢ I ∂ x ) 2 + ( ∂ ln ⁢ ⁢ I ∂ y ) 2 + ( ∂ ln ⁢ ⁢ I ∂ z ) 2 to determine the simulated resist image.

Claim 13

The apparatus according to claim 7 , the means for determining utilizing an equation of the form z ⁡ ( x , y ) = d ⁡ ( 1 - 1 α ⁢ ⁢ γ ⁢ ⁢ d ⁢ ln ⁡ ( 1 + D eff ⁢ γ ⁡ ( EI ⁡ ( x , y ) E 0 ) γ ⁢ F ⁡ ( x , y ) ) ) ⁢ ⁢ wherein F ⁡ ( x , y ) = ( ∂ ln ⁢ ⁢ I ⁡ ( x , y ) ∂ x ) 2 + ( ∂ ln ⁢ ⁢ I ⁡ ( x , y ) ∂ y ) 2 + α 2 to determine the simulated resist image.

Claim 14

The apparatus according to claim 7 , further comprising means for automatically changing parameters.

Claim 15

A software product comprising instructions, stored on computer-readable media, wherein the instructions, when executed by a computer, perform steps for determining integrity of an integrated circuit, comprising: determining a simulated resist image for an integrated circuit, wherein determining a simulated resist image involves using an equation of the form ( ∂ S ∂ x ) 2 + ( ∂ S ∂ y ) 2 + ( ∂ S ∂ z ) 2 = ( I ⁡ ( 0 ) I ⁡ ( x , y , z ) ) 2 ⁢ γ ⁢ ( 1 r 0 ) 2 , wherein I(x,y,z) is intensity used to illuminate the resist at a point (x,y,z) of the resist, I(0) is reference intensity obtainable from equation I(0)=E 0 /E, where E is incident light dose in large exposed areas of the resist and E 0 is a threshold, γ is a non-linearity parameter describing non-linearity of one of a developing or resist process, and r 0 is a factor obtainable from equation D eff =r 0 ·t, wherein D eff is effective resist thickness and t is developing time; comparing the simulated resist image of the circuit with a design of the circuit to obtain predictions about a circuit obtainable in a manufacturing process; detecting deviations between the simulated resist image and the design which differ from a rated value by more than a tolerance value, and the simulated resist image having a surface function of the form S(x,y,z) describing uniform propagation of a surface in a resist to be simulated under illumination.

Claim 16

A software product comprising instructions, stored on computer-readable media, wherein the instructions, when executed by a computer, perform steps for determining integrity of an integrated circuit, comprising: determining a simulated resist image for an integrated circuit, wherein determining a simulated resist image involves using an equation of the form ( ∂ S ∂ x ) 2 + ( ∂ S ∂ y ) 2 + ( ∂ S ∂ z ) 2 = ( I ⁡ ( 0 ) I ⁡ ( x , y , z ) ) 2 ⁢ γ ⁢ ( 1 r 0 ) 2 , wherein I(x,y,z) is intensity used to illuminate the resist at a point (x,y,z) of the resist, I(0) is reference intensity obtainable from equation I(0)=E 0 /E, where E is incident light dose in large exposed areas of the resist and E 0 is a threshold, γ is a non-linearity parameter describing non-linearity of one of a developing or resist process, and r 0 is a factor obtainable from equation D eff =r 0 ·t, wherein D eff is effective resist thickness and t is developing time; comparing the simulated resist image of the circuit with a design of the circuit to obtain predictions about a circuit obtainable in a manufacturing process; detecting deviations between the simulated resist image and the design which differ from a rated value by more than a tolerance value, and the simulated resist image having a surface function of the form S(x,y,z) describing uniform propagation of a surface in a resist to be simulated under illumination.

Claim 17

The software product according claim 13 , further comprising utilizing an intensity distribution in the resist of the form I(x,y,z)=I(x,y)e −αz .

Claim 18

The software product according to claim 13 , the step of determining the simulated resist image comprising utilizing γ>>1.

Claim 19

A software product according to claim 13 , the step of determining the simulated resist image comprising utilizing an equation of the form S ⁡ ( x , y , z ) = 1 r 0 ⁢ γ ⁢ ( E 0 EI ⁡ ( x , y , z ) ) γ ⁢ 1 ( ∂ ln ⁢ ⁢ I ∂ x ) 2 + ( ∂ ln ⁢ ⁢ I ∂ y ) 2 + ( ∂ ln ⁢ ⁢ I ∂ z ) 2 .

Claim 20

The software product according claim 13 , the step of determining the simulated resist image comprising utilizing an equation of the form z ⁡ ( x , y ) = d ⁡ ( 1 - 1 αγ ⁢ ⁢ d ⁢ ln ⁡ ( 1 + D eff ⁢ γ ⁡ ( EI ⁡ ( x , y ) E 0 ) γ ⁢ F ⁡ ( x , y ) ) ) ⁢ ⁢ wherein F ⁡ ( x , y ) = ( ∂ ln ⁢ ⁢ I ⁡ ( x , y ) ∂ x ) 2 + ( ∂ ln ⁢ ⁢ I ⁡ ( x , y ) ∂ y ) 2 + α 2 .

Claim 21

The software product according to claim 13 , further comprising processing a hierarchically structured data input set describing the design and providing the simulated resist image in the form of a hierarchical structuring.

Claim 22

An integrated circuit prepared by a process comprising: determining a simulated resist image for an integrated circuit, wherein determining a simulated resist image involves using an equation of the form ( ∂ S ∂ x ) 2 + ( ∂ S ∂ y ) 2 + ( ∂ S ∂ z ) 2 = ( I ⁡ ( 0 ) I ⁡ ( x , y , z ) ) 2 ⁢ γ ⁢ ( 1 r 0 ) 2 , wherein I(x,y,z) is intensity used to illuminate the resist at a point (x,y,z) of the resist, I(0) is reference intensity obtainable from equation I(0)=E 0 /E, where E is incident light dose in large exposed areas of the resist and E 0 is a threshold , γ is a non-linearity parameter describing non-linearity of one of a developing or resist process, and r 0 is a factor obtainable from equation D eff =r 0 ·t, wherein D eff is effective resist thickness and t is developing time; comparing a simulated resist image of the integrated circuit with a design of the integrated circuit to obtain predictions about the integrated circuit obtainable in a manufacturing process; and detecting deviations between the simulated resist image and the design which differ from a rated value by more than a tolerance value; the simulated resist image having a surface function of the form S(x,y,z) describing uniform propagation of a surface in a resist to be simulated under illumination.

Claim 23

An integrated circuit prepared by a process comprising: determining a simulated resist image for an integrated circuit, wherein determining a simulated resist image involves using an equation of the form ( ∂ S ∂ x ) 2 + ( ∂ S ∂ y ) 2 + ( ∂ S ∂ z ) 2 = ( I ⁡ ( 0 ) I ⁡ ( x , y , z ) ) 2 ⁢ γ ⁢ ( 1 r 0 ) 2 , wherein I(x,y,z) is intensity used to illuminate the resist at a point (x,y,z) of the resist, I(0) is reference intensity obtainable from equation I(0)=E 0 /E, where E is incident light dose in large exposed areas of the resist and E 0 is a threshold , γ is a non-linearity parameter describing non-linearity of one of a developing or resist process, and r 0 is a factor obtainable from equation D eff =r 0 ·t, wherein D eff is effective resist thickness and t is developing time; comparing a simulated resist image of the integrated circuit with a design of the integrated circuit to obtain predictions about the integrated circuit obtainable in a manufacturing process; and detecting deviations between the simulated resist image and the design which differ from a rated value by more than a tolerance value; the simulated resist image having a surface function of the form S(x,y,z) describing uniform propagation of a surface in a resist to be simulated under illumination.