Component working with acoustic waves and having a matching network

Claim 2

A component working with acoustic bulk waves, comprising: at least one thin-film resonator, comprising: at least one piezoelectric layer and at least two electrodes applied in layers; the component further comprising: a multi-layer substrate comprising: an upper side upon which the at least one thin-film resonator is arranged; outside electrodes; and at least one integrated passive or active circuit element to which the at least one thin-film resonator is electrically connected; the component further comprising: at least one chip component arranged on the upper side of the multi-layer substrate in addition to the at least one thin-film resonator, wherein the at least one chip component is a filter chip.

Claim 3

The component according to claim 1 , wherein the at least one integrated circuit element forms at least a part of a matching network.

Claim 4

The component according to claim 1 , wherein a part of the at least one circuit element is arranged on the upper side of the multi-layer substrate as interconnects.

Claim 5

The component according to claim 1 , further comprising: at least one discrete passive or active circuit element arranged on the upper side of the multi-layer substrate.

Claim 6

The component according to claim 1 , wherein a plurality of thin-film resonators form band pass filters with a ladder-type arrangement.

Claim 7

The component according to claim 1 , further comprising: at least one acoustic mirror that comprises a plurality of alternating layers with high and low acoustic impedance.

Claim 8

The component according to claim 1 , wherein the at least one filter chip is a surface acoustic wave (SAW) component.

Claim 9

The component according to claim 1 , wherein the multi-layer substrate comprises ceramic layers.

Claim 10

The component according to claim 1 , wherein the multi-layer substrate comprises layers of silicon.

Claim 11

The component according to claim 1 , wherein the multi-layer substrate comprises layers of an organic material.

Claim 12

The component according to claim 10 , wherein the multi-layer substrate comprises layers of an organic laminated material.

Claim 13

The component according to claim 10 , wherein the multi-layer substrate comprises layers of an organic plastic material.

Claim 14

The component according to claim 1 , further comprising: a multi-layer substrate with the integrated circuit elements upon which the layers of the at least one thin-film resonator are directly deposited.

Claim 15

The component according to claim 1 , further comprising: a carrier substrate upon which the layers of the at least one thin-film resonator are deposited.

Claim 16

A component working with acoustic bulk waves, comprising: at least one thin-film resonator, comprising: at least one piezoelectric layer and at least two electrodes applied in layers; the component further comprising: a multi-layer substrate comprising: an upper side upon which the at least one thin-film resonator is arranged; outside electrodes; and at least one integrated passive or active circuit element to which the at least one thin-film resonator is electrically connected; the component further comprising: a carrier substrate upon which the at least one thin-film resonator is deposited, the at least one thin-film resonator being electrically connected with bond wires to the at least one circuit element integrated in the multi-layer substrate, the carrier substrate being arranged on an upper side of the multi-layer substrate.

Claim 17

A component working with acoustic bulk waves, comprising: at least one thin-film resonator, comprising: at least one piezoelectric layer and at least two electrodes applied in layers; the component further comprising: a multi-layer substrate comprising: an upper side upon which the at least one thin-film resonator is arranged; outside electrodes; and at least one integrated passive or active circuit element to which the at least one thin-film resonator is electrically connected; the component further comprising: a carrier substrate upon which the at least one thin-film resonator is deposited, the at least one thin-film resonator being electrically connected with bond wires to the at least one circuit element integrated in the multi-layer substrate, the carrier substrate being arranged on an upper side of the multi-layer substrate.

Claim 18

The component according to claim 15 , wherein a plurality of thin-film resonators form a serial cascade circuit of a plurality of thin-film resonators for assuring a higher power compatibility of the component.

Claim 19

The component according to claim 15 , wherein the carrier substrate comprises a multi-layer structure.

Claim 20

The component according to claim 17 , wherein the carrier substrate with a multi-layer structure comprises at least one integrated circuit element.

Claim 21

A component working with acoustic bulk waves, comprising: at least one thin-film resonator, comprising: at least one piezoelectric layer and at least two electrodes applied in layers; the component further comprising: a multi-layer substrate comprising: an upper side upon which the at least one thin-film resonator is arranged; outside electrodes; and at least one integrated passive or active circuit element to which the at least one thin-film resonator is electrically connected; the component further comprising: a cavity located between an active region of the at least one thin film resonator and the multi-layer substrate.

Claim 22

A component working with acoustic bulk waves, comprising: at least one thin-film resonator, comprising: at least one piezoelectric layer and at least two electrodes applied in layers; the component further comprising: a multi-layer substrate comprising: an upper side upon which the at least one thin-film resonator is arranged; outside electrodes; and at least one integrated passive or active circuit element to which the at least one thin-film resonator is electrically connected; the component further comprising: a cavity located between an active region of the at least one thin film resonator and the multi-layer substrate.

Claim 23

A component working with acoustic bulk waves, comprising: at least one thin-film resonator, comprising: at least one piezoelectric layer and at least two electrodes applied in layers; the component further comprising: a multi-layer substrate comprising: an upper side upon which the at least one thin-film resonator is arranged; outside electrodes; and at least one integrated passive or active circuit element to which the at least one thin-film resonator is electrically connected; the component further comprising: a carrier substrate upon which the at least one thin-film resonator is deposited, the at least one thin-film resonator being electrically connected with bond wires to the at least one circuit element integrated in the multi-layer substrate, the carrier substrate being arranged on an upper side of the multi-layer substrate, the carrier substrate being connected to the multi-layer substrate via a flip-chip technique; wherein the carrier substrate comprises a multi-layer structure.

Claim 24

A component working with acoustic bulk waves, comprising: at least one thin-film resonator, comprising: at least one piezoelectric layer and at least two electrodes applied in layers; the component further comprising: a multi-layer substrate comprising: an upper side upon which the at least one thin-film resonator is arranged; outside electrodes; and at least one integrated passive or active circuit element to which the at least one thin-film resonator is electrically connected; the component further comprising: a carrier substrate upon which the at least one thin-film resonator is deposited, the at least one thin-film resonator being electrically connected with bond wires to the at least one circuit element integrated in the multi-layer substrate, the carrier substrate being arranged on an upper side of the multi-layer substrate, the carrier substrate being connected to the multi-layer substrate via a flip-chip technique; wherein the carrier substrate comprises a multi-layer structure.

Claim 25

The component according to claim 20 , wherein the carrier substrate with a multi-layer structure comprises at least one integrated circuit element.

Claim 26

A component working with acoustic bulk waves, comprising: at least one thin-film resonator, comprising: at least one piezoelectric layer and at least two electrodes applied in layers; the component further comprising: a multi-layer substrate comprising: an upper side upon which the at least one thin-film resonator is arranged; outside electrodes; and at least one integrated passive or active circuit element to which the at least one thin-film resonator is electrically connected; wherein a plurality of circuit elements integrated in the multi-layer substrate form a part of a duplexer circuit.

Claim 27

A component working with acoustic bulk waves, comprising: at least one thin-film resonator, comprising: at least one piezoelectric layer and at least two electrodes applied in layers; the component further comprising: a multi-layer substrate comprising: an upper side upon which the at least one thin-film resonator is arranged; outside electrodes; and at least one integrated passive or active circuit element to which the at least one thin-film resonator is electrically connected; wherein a plurality of circuit elements integrated in the multi-layer substrate form a part of a duplexer circuit.

Claim 28

The component according to claim 22 , further comprising: two separate carrier substrates in two separate housings upon which are arranged, on an upper side of the multi-layer substrate, band pass filters constructed of a plurality of thin-film resonators in the reception path and transmission path of the duplexer.

Claim 29

The component according to claim 22 , wherein band pass filters constructed of a plurality of thin-film resonators in the reception path and transmission path of the duplexer are realized on a carrier substrate or directly on the multi-layer substrate.

Claim 30

The component according to claim 22 , further comprising: two separate carrier substrates in a common housing upon which are arranged, on an upper side of the multi-layer substrate, band pass filters constructed of a plurality of thin-film resonators in the reception path and transmission path of the duplexer.