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US6509813B2 Expired / Lapsed US ⏱️ 0.0 years remaining

Bulk acoustic wave resonator with a conductive mirror

Assignee: Avago Technologies International Sales Pte Ltd
•
Filing: 2001-01-16
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Granted: 2003-01-21
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Expires: 2021-01-16
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Abstract

Abstract A method of fabricating a bulk acoustic wave (BAW) resonator and a BAW resonator so fabricated, the method including the steps of: providing a substrate; providing a first isolation structure; and providing a resonator section including a piezolayer; wherein the first isolation structure includes an acoustic mirror made from only electrically conductive layers of alternating high and low acoustic impedance. In some applications, the first isolation structure is situated between the resonator section and the substrate, while in other applications, the first isolation structure is situated above the resonator section (on the side of the resonator section facing away from the substrate), so that the resonator section lies between the first isolation structure and the substrate, and the resonator then further comprises a second isolation structure situated between the resonator section and the substrate.

Inventors

  • 👤 Juha Ellä
  • 👤 Jyrki Kaitila

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-08 00:45
CPC Classifications
H; H03; H03H; H03H9/00; H03H9/02; H03H9/05; H03H9/10; H03H9/1007; H03H9/105; H03H3/00; H03H3/007; H03H3/02; H03H9/15; H03H9/17; H03H9/171; H03H9/172; H03H9/175; H10; H10W; H10W72/00; H10W72/851; H10W72/874; H10W72/884; Y; Y10; Y10T; Y10T29/00; Y10T29/42

Claims Analysis

Total Claims: 14
Claim 1
Independent Claim 121 words
A method of fabricating a bulk acoustic wave (BAW) resonator, comprising the steps of: a) providing a substrate; b) providing a first isolation structure; and c) providing a resonator section, the resonator section comprising a piezolayer; wherein the first isolation structure comprises an acoustic mirror made from only electrically conductive layers of alternating high and low acoustic impedance, further wherein the first isolation structure is provided so as to be situated above the resonator section, on the side of the resonator section facing away from the substrate, so that the resonator section lies between the first isolation structure and the substrate, and wherein the method further comprises the step of providing a flip-chip ball on top of the first isolation structure.
Claim 2
Independent Claim 121 words
A method of fabricating a bulk acoustic wave (BAW) resonator, comprising the steps of: a) providing a substrate; b) providing a first isolation structure; and c) providing a resonator section, the resonator section comprising a piezolayer; wherein the first isolation structure comprises an acoustic mirror made from only electrically conductive layers of alternating high and low acoustic impedance, further wherein the first isolation structure is provided so as to be situated above the resonator section, on the side of the resonator section facing away from the substrate, so that the resonator section lies between the first isolation structure and the substrate, and wherein the method further comprises the step of providing a flip-chip ball on top of the first isolation structure.
Claim 3
Dependent Claim 21 words
The method of claim 1 , wherein a layer of the acoustic mirror abuts the piezolayer and serves as an electrode.
Claim 4
Dependent Claim 71 words
A method as in claim 1 , further comprising the step of providing a capping material, the capping material positioned so that the first isolation structure and resonator section are sandwiched between the substrate and the capping material and so protected against mechanical loading, with an air interface between the resonator section and either the capping material or the substrate in case of the resonator including only a single isolation structure.
Claim 5
Dependent Claim 25 words
A method as in claim 1 , further comprising the step of providing a second isolation structure situated between the resonator section and the substrate.
Claim 6
Dependent Claim 28 words
A method as in claim 4 , wherein the second isolation structure comprises an acoustic mirror made from layers of materials of alternating high and low acoustic impedance.
Claim 7
Dependent Claim 15 words
A method as in claim 4 , wherein the second isolation structure comprises a membrane.
Claim 8
Dependent Claim 103 words
A bulk acoustic wave (BAW) resonator, comprising: a) a substrate; b) a first isolation structure; and c) a resonator section, the resonator section comprising a piezolayer; wherein the first isolation structure comprises an acoustic mirror made from only electrically conductive layers of alternating high and low acoustic impedance, further wherein the first isolation structure is situated above the resonator section, on the side of the resonator section facing away from the substrate, so that the resonator section lies between the first isolation structure and the substrate, and wherein the BAW resonator further comprises a flip-chip ball on top of the first isolation structure.
Claim 9
Dependent Claim 103 words
A bulk acoustic wave (BAW) resonator, comprising: a) a substrate; b) a first isolation structure; and c) a resonator section, the resonator section comprising a piezolayer; wherein the first isolation structure comprises an acoustic mirror made from only electrically conductive layers of alternating high and low acoustic impedance, further wherein the first isolation structure is situated above the resonator section, on the side of the resonator section facing away from the substrate, so that the resonator section lies between the first isolation structure and the substrate, and wherein the BAW resonator further comprises a flip-chip ball on top of the first isolation structure.
Claim 10
Dependent Claim 23 words
A BAW resonator as in claim 7 , wherein a layer of the acoustic mirror abuts the piezolayer and serves as an electrode.
Claim 11
Dependent Claim 22 words
A BAW resonator as in claim 7 , further comprising a second isolation structure situated between the resonator section and the substrate.
Claim 12
Dependent Claim 29 words
A BAW resonator as in claim 9 , wherein the second isolation structure comprises an acoustic mirror made from layers of materials of alternating high and low acoustic impedance.
Claim 13
Dependent Claim 16 words
A BAW resonator as in claim 9 , wherein the second isolation structure comprises a membrane.
Claim 14
Dependent Claim 68 words
A BAW resonator as in claim 7 , further comprising a capping material, the capping material positioned so that the first isolation structure and resonator section are sandwiched between the substrate and the capping material and so protected against mechanical loading, with an air interface between the resonator section and either the capping material or the substrate in case of the resonator including only a single isolation structure.

References Cited (Backward Citations)

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