Patent US6884675B2 successfully refreshed from Google Patents.
Patent US6919243B2 successfully refreshed from Google Patents.
US6919243B2
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Methods of forming an integrated circuit capacitor in which a metal preprocessed layer is formed on an electrode thereof
Assignee: Samsung Electronics Co Ltd
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Filing: 2002-01-09
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Granted: 2005-07-19
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Expires: 2022-01-09
Abstract
Abstract An integrated circuit capacitor is manufactured by forming a lower electrode on a substrate and forming a metal preprocessed layer on the lower electrode using chemical vapor deposition in which a metal precursor is used as a source gas and the metal precursor comprises oxygen. A dielectric layer is then formed on the metal preprocessed layer and an upper electrode is formed on the dielectric layer. The metal preprocessed layer may reduce oxidation of the lower electrode due to oxygen supplied during formation of the dielectric layer.
Inventors
- 👤 Jeong-hee Chung
- 👤 In-sung Park
- 👤 Jae-hyun Yeo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:08
CPC Classifications
H; H10; H10D; H10D84/00; H10D1/00; H10D1/60; H10D1/68; H10D1/692; C; C23; C23C; C23C16/00; C23C16/06; C23C16/18; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6314; H10P14/6322; H10P14/66; H10P14/662; H10D1/711; H10D1/716; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69393
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
115 words
A method comprising: forming an integrated circuit capacitor, which comprises: forming a lower electrode on a substrate; forming a metal preprocessed layer on the lower electrode using chemical vapor deposition in which a metal precursor comprising a material selected from a group of materials consisting of Ta(OC 2 H 5 ) 5 and Ta(OCH 3 ) 5 is used as a source gas comprising: placing the substrate into a reaction chamber; adsorbing the metal precursor directly in the lower electrode; reacting the metal precursor with the lower electrode; and purging the metal precursor from the reaction chamber, forming a dielectric layer on the metal preprocessed layer; and forming an upper electrode on the dielectric layer.
Claim 2
Independent Claim
115 words
A method comprising: forming an integrated circuit capacitor, which comprises: forming a lower electrode on a substrate; forming a metal preprocessed layer on the lower electrode using chemical vapor deposition in which a metal precursor comprising a material selected from a group of materials consisting of Ta(OC 2 H 5 ) 5 and Ta(OCH 3 ) 5 is used as a source gas comprising: placing the substrate into a reaction chamber; adsorbing the metal precursor directly in the lower electrode; reacting the metal precursor with the lower electrode; and purging the metal precursor from the reaction chamber, forming a dielectric layer on the metal preprocessed layer; and forming an upper electrode on the dielectric layer.
Claim 3
Dependent Claim
29 words
The method of claim 1 , wherein the lower electrode comprises at least one material selected from group of materials consisting of polysilicon, a noble metal, and metal nitride.
Claim 4
Dependent Claim
24 words
The method of claim 2 , wherein the noble metal is selected from a group of noble metals consisting of Ru, Pt, and Ir.
Claim 5
Dependent Claim
27 words
The method of claim 2 , wherein the metal nitride is selected from a group of metal nitrides consisting of titanium nitride, tantalum nitride, and tungsten nitride.
Claim 6
Dependent Claim
12 words
The method of claim 1 , wherein the metal precursor comprises Ta.
Claim 7
Dependent Claim
20 words
The method of claim 1 , wherein a flow rate of the metal precursor during deposition is about 1-2000 sccm.
Claim 8
Dependent Claim
19 words
The method of claim 1 , wherein a temperature in the reaction chamber is about 100° C.- 600° C.
Claim 9
Dependent Claim
36 words
The method of claim 1 , wherein purging the metal precursor comprises purging the metal precursor from the reaction chamber using a purge gas selected from a group of purge gases consisting of argon and nitrogen.
Claim 10
Dependent Claim
17 words
The method of claim 1 , wherein a pressure in the reaction chamber is about 0.1-30 torr.
Claim 11
Dependent Claim
15 words
The method of claim 1 , wherein the dielectric layer comprises a metal oxide layer.
Claim 12
Dependent Claim
29 words
The method of claim 1 , wherein the upper electrode comprises at least one material selected from group of materials consisting of polysilicon; a noble metal, and metal nitride.
Claim 13
Dependent Claim
24 words
The method of claim 11 , wherein the noble metal is selected from a group of noble metals consisting of Ru, Pt, and Ir.
Claim 14
Dependent Claim
27 words
The method of claim 11 , wherein the metal nitride is selected from a group of metal nitrides consisting of titanium nitride, tantalum nitride, and tungsten nitride.
Claim 15
Dependent Claim
78 words
The method of claim 10 , wherein forming the metal oxide layer comprises: placing the substrate into a reaction chamber; introducing a metal source gas into the reaction chamber; adsorbing the metal source gas in the lower electrode; purging the metal source gas from the reaction chamber; introducing an oxygen source gas into the reaction chamber; adsorbing the oxygen source gas in the lower electrode; and reacting the adsorbed metal source gas with the adsorbed oxygen source gas.
Claim 16
Dependent Claim
14 words
The method of claim 14 , wherein the metal oxide layer comprises tantalum oxide.
Claim 17
Dependent Claim
40 words
The method of claim 14 , wherein the metal source gas comprises a source gas selected from a group of source gases consisting of Ta(OCH 2 H 5 ) 5 , Ta(OCH 3 ) 5 , and TaCl 5 .
Claim 18
Dependent Claim
44 words
The method of claim 14 , wherein the oxygen source gas comprises at least one source gas selected from a group of source gases consisting of H 2 O, H 2 O 2 , O 2 , N 2 O, and O 3 .
Claim 19
Dependent Claim
30 words
The method of claim 14 , wherein a flow rate of the metal source gas and a flow rate of the oxygen source gas during deposition is about 1-2000 sccm.
Claim 20
Dependent Claim
19 words
The method of claim 14 , wherein a temperature in the reaction chamber is about 100° C.- 600° C.
Claim 21
Dependent Claim
38 words
The method of claim 14 , wherein purging the metal source gas comprises purging the metal source gas from the reaction chamber using a purge gas selected from a group of purge gases consisting of argon and nitrogen.
Claim 22
Dependent Claim
17 words
The method of claim 14 , wherein a pressure in the reaction chamber is about 0.1-10 torr.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2008-07-18 | 2009-01-17 | 2009-07-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2012-07-18 | 2013-01-17 | 2013-07-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2016-07-18 | 2017-01-17 | 2017-07-19 | $7700.00 | Window Closed / Lapsed |