Patent US321645A successfully refreshed from Google Patents.
Patent US6881642B2 successfully refreshed from Google Patents.
US6881642B2
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Method of forming a MIM capacitor with metal nitride electrode
Assignee: Round Rock Research LLC
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Filing: 2003-04-21
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Granted: 2005-04-19
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Expires: 2023-04-21
Abstract
Abstract A method of forming an MIM capacitor with low leakage and high capacitance is disclosed. A layer of titanium nitride (TiN) or boron-doped titanium nitride (TiBN) material is formed as a lower electrode over an optional capacitance layer of hemispherical grained polysilicon (HSG). Prior to the dielectric formation, the first layer may be optionally subjected to a nitridization or oxidation process. A dielectric layer of, for example, aluminum oxide (Al 2 O 3 ) formed by atomic layer deposition (ALD) is fabricated over the first layer and after the optional nitridization or oxidation process. An upper electrode of titanium nitride (TiN) or boron-doped titanium nitride (TiBN) is formed over the dielectric layer.
Inventors
- 👤 Cem Basceri
- 👤 Thomas M. Graettinger
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:07
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/712; H10D1/696; H10D1/716; H10P; H10P14/00; H10P14/40; H10P14/418; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; H10P14/69392; H10P14/69393; H10P14/69397
Claims Analysis
Total Claims: 64
Claim 1
Independent Claim
88 words
A method of forming an MIM capacitor on a semiconductor substrate, comprising the acts of: providing a conductive support layer over a polysilicon plug formed over a substrate; providing a first metal nitride layer over said conductive support layer; providing a dielectric layer over said first metal nitride layer and in contact with said conductive support layer; and providing a second metal nitride layer over said dielectric layer, wherein each of said first and second metal nitride layers is formed of titanium nitride or boron-doped titanium nitride material.
Claim 2
Independent Claim
88 words
A method of forming an MIM capacitor on a semiconductor substrate, comprising the acts of: providing a conductive support layer over a polysilicon plug formed over a substrate; providing a first metal nitride layer over said conductive support layer; providing a dielectric layer over said first metal nitride layer and in contact with said conductive support layer; and providing a second metal nitride layer over said dielectric layer, wherein each of said first and second metal nitride layers is formed of titanium nitride or boron-doped titanium nitride material.
Claim 3
Dependent Claim
21 words
The method of claim 1 , wherein each of said first and second metal nitride layers is a titanium nitride layer.
Claim 4
Dependent Claim
24 words
The method of claim 1 , wherein said conductive support layer is a layer of hemispherical grained polysilicon adjacent said first metal nitride layer.
Claim 5
Dependent Claim
23 words
The method of claim 3 further comprising the act of opening grains forming said layer of hemispherical grained polysilicon, to activate said grains.
Claim 6
Dependent Claim
31 words
The method of claim 4 , wherein said act of opening said grains further comprising etching said layer of hemispherical grained polysilicon to form an etched layer of hemispherical grained polysilicon.
Claim 7
Dependent Claim
31 words
The method of claim 5 , wherein said act of etching said layer of hemispherical grained polysilicon further comprises contacting said layer of hemispherical grained polysilicon with a solution of HF.
Claim 8
Dependent Claim
21 words
The method of claim 3 further comprising the act of subjecting said layer of hemispherical grained polysilicon to an RTN process.
Claim 9
Dependent Claim
21 words
The method of claim 3 further comprising the act of subjecting said layer of hemispherical grained polysilicon to an anneal process.
Claim 10
Dependent Claim
22 words
The method of claim 3 further comprising the act of subjecting said layer of hemispherical grained polysilicon to a PH 3 anneal.
Claim 11
Dependent Claim
22 words
The method of claim 1 , wherein said first metal nitride layer is a titanium nitride layer formed by chemical vapor deposition.
Claim 12
Dependent Claim
26 words
The method of claim 10 , wherein said titanium nitride layer is formed by chemical vapor deposition using a nitrogen source and a titanium source precursor.
Claim 13
Dependent Claim
27 words
The method of claim 11 , wherein said titanium source precursor is selected from the group consisting of titanium tetrachloride, titanium trichloride, bis(cyclopentadienyl)titanium dichloride and cyclopentadienyltitanium trichloride.
Claim 14
Dependent Claim
22 words
The method of claim 1 , wherein said first metal nitride layer is a titanium nitride layer formed by atomic layer deposition.
Claim 15
Dependent Claim
26 words
The method of claim 13 , wherein said titanium nitride layer is formed by atomic layer deposition using a nitrogen source and a titanium source precursor.
Claim 16
Dependent Claim
27 words
The method of claim 14 , wherein said titanium source precursor is selected from the group consisting of titanium tetrachloride, titanium trichloride, bis(cyclopentadienyl)titanium dichloride and cyclopentadienyltitanium trichloride.
Claim 17
Dependent Claim
20 words
The method of claim 1 further comprising the act of subjecting said first metal nitride layer to a nitridizing ambient.
Claim 18
Dependent Claim
46 words
The method of claim 16 , wherein said act of subjecting said first metal nitride layer to a nitridizing ambient further comprising the act of exposing said first metal nitride layer to a nitrogen-containing plasma at a temperature from about 500° C. to about 900° C.
Claim 19
Dependent Claim
20 words
The method of claim 1 further comprising the act of subjecting said first metal nitride layer to an oxidizing ambient.
Claim 20
Dependent Claim
36 words
The method of claim 18 , wherein said act of subjecting said first metal nitride layer to an oxidizing ambient further comprising the act of exposing said first metal nitride layer to a remote oxygen-containing plasma.
Claim 21
Dependent Claim
15 words
The method of claim 1 , wherein said dielectric layer is an aluminum oxide layer.
Claim 22
Dependent Claim
17 words
The method of claim 20 , wherein said aluminum oxide layer is formed by atomic layer deposition.
Claim 23
Dependent Claim
26 words
The method of claim 21 , wherein said aluminum oxide layer is formed by atomic layer deposition using an oxygen source and an aluminum source precursor.
Claim 24
Dependent Claim
17 words
The method of claim 22 , wherein said aluminum source precursor is aluminum tetrachloride or aluminum trichloride.
Claim 25
Dependent Claim
22 words
The method of claim 1 , wherein said second metal nitride layer is a titanium nitride layer formed by chemical vapor deposition.
Claim 26
Dependent Claim
26 words
The method of claim 24 , wherein said titanium nitride layer is formed by chemical vapor deposition using a nitrogen source and a titanium source precursor.
Claim 27
Dependent Claim
27 words
The method of claim 25 , wherein said titanium source precursor is selected from the group consisting of titanium tetrachloride, titanium trichloride, bis(cyclopentadienyl)titanium dichloride and cyclopentadienyltitanium trichloride.
Claim 28
Dependent Claim
22 words
The method of claim 1 , wherein said second metal nitride layer is a titanium nitride layer formed by atomic layer deposition.
Claim 29
Dependent Claim
26 words
The method of claim 27 , wherein said titanium nitride layer is formed by atomic layer deposition using a nitrogen source and a titanium source precursor.
Claim 30
Dependent Claim
27 words
The method of claim 28 , wherein said titanium source precursor is selected from the group consisting of titanium tetrachloride, titanium trichloride, bis(cyclopentadienyl)titanium dichloride and cyclopentadienyltitanium trichloride.
Claim 31
Independent Claim
61 words
A method of forming an MIM capacitor on a semiconductor substrate, comprising the acts of: providing a first metal nitride layer over a substrate; providing a dielectric layer over said first metal nitride layer; and providing a second metal nitride layer over said dielectric layer, wherein each of said first and second metal nitride layers is a boron-doped titanium nitride layer.
Claim 32
Independent Claim
61 words
A method of forming an MIM capacitor on a semiconductor substrate, comprising the acts of: providing a first metal nitride layer over a substrate; providing a dielectric layer over said first metal nitride layer; and providing a second metal nitride layer over said dielectric layer, wherein each of said first and second metal nitride layers is a boron-doped titanium nitride layer.
Claim 33
Independent Claim
68 words
A method of forming an MIM capacitor on a semiconductor substrate, comprising the acts of: providing a first metal nitride layer over a substrate; providing a dielectric layer over said first metal nitride layer; and providing a second metal nitride layer over said dielectric layer, wherein said first metal nitride layer is a titanium nitride layer and said second metal nitride layer is a boron-doped titanium nitride layer.
Claim 34
Independent Claim
68 words
A method of forming an MIM capacitor on a semiconductor substrate, comprising the acts of: providing a first metal nitride layer over a substrate; providing a dielectric layer over said first metal nitride layer; and providing a second metal nitride layer over said dielectric layer, wherein said first metal nitride layer is a titanium nitride layer and said second metal nitride layer is a boron-doped titanium nitride layer.
Claim 35
Independent Claim
68 words
A method of forming an MIM capacitor on a semiconductor substrate, comprising the acts of: providing a first metal nitride layer over a substrate; providing a dielectric layer over said first metal nitride layer; and providing a second metal nitride layer over said dielectric layer, wherein said first metal nitride layer is a boron-doped titanium nitride layer and said second metal nitride layer is a titanium nitride layer.
Claim 36
Independent Claim
68 words
A method of forming an MIM capacitor on a semiconductor substrate, comprising the acts of: providing a first metal nitride layer over a substrate; providing a dielectric layer over said first metal nitride layer; and providing a second metal nitride layer over said dielectric layer, wherein said first metal nitride layer is a boron-doped titanium nitride layer and said second metal nitride layer is a titanium nitride layer.
Claim 37
Independent Claim
62 words
A method of forming an MIM capacitor on a semiconductor substrate, comprising the acts of: providing a first metal nitride layer over a substrate wherein said first metal nitride layer is a boron-doped titanium nitride layer formed by chemical vapor deposition; providing a dielectric layer over said first metal nitride layer; and providing a second metal nitride layer over said dielectric layer.
Claim 38
Independent Claim
62 words
A method of forming an MIM capacitor on a semiconductor substrate, comprising the acts of: providing a first metal nitride layer over a substrate wherein said first metal nitride layer is a boron-doped titanium nitride layer formed by chemical vapor deposition; providing a dielectric layer over said first metal nitride layer; and providing a second metal nitride layer over said dielectric layer.
Claim 39
Dependent Claim
28 words
The method of claim 33 , wherein said act of providing said boron-doped titanium nitride layer further comprises the act of incorporating boron into a titanium nitride layer.
Claim 40
Dependent Claim
33 words
The method of claim 34 , wherein said act of incorporating boron into a titanium nitride layer further comprises the act of exposing said titanium nitride layer to B 2 H 6 .
Claim 41
Dependent Claim
43 words
The method of claim 35 , wherein said act of incorporating boron into a titanium nitride layer further comprises the act of exposing said titanium nitride layer to B 2 H 6 at a temperature of about 200° C. to about 600° C.
Claim 42
Dependent Claim
23 words
The method of claim 35 further comprising the act of exposing said titanium nitride layer and B 2 H 6 to ultraviolet light.
Claim 43
Independent Claim
62 words
A method of forming an MIM capacitor on a semiconductor substrate, comprising the acts of: providing a first metal nitride layer over a substrate; providing a dielectric layer over said first metal nitride layer; and providing a second metal nitride layer over said dielectric layer, wherein said second metal nitride layer is a boron-doped titanium nitride layer formed by chemical vapor deposition.
Claim 44
Independent Claim
62 words
A method of forming an MIM capacitor on a semiconductor substrate, comprising the acts of: providing a first metal nitride layer over a substrate; providing a dielectric layer over said first metal nitride layer; and providing a second metal nitride layer over said dielectric layer, wherein said second metal nitride layer is a boron-doped titanium nitride layer formed by chemical vapor deposition.
Claim 45
Dependent Claim
28 words
The method of claim 38 , wherein said act of providing said boron-doped titanium nitride layer further comprises the act of incorporating boron into a titanium nitride layer.
Claim 46
Dependent Claim
33 words
The method of claim 39 , wherein said act of incorporating boron into a titanium nitride layer further comprises the act of exposing said titanium nitride layer to B 2 H 6 .
Claim 47
Dependent Claim
43 words
The method of claim 40 , wherein said act of incorporating boron into a titanium nitride layer further comprises the act of exposing said titanium nitride layer to B 2 H 6 at a temperature of about 200° C. to about 600° C.
Claim 48
Dependent Claim
23 words
The method of claim 40 further comprising the act of exposing said titanium nitride layer and B 2 H 6 to ultraviolet light.
Claim 49
Independent Claim
104 words
A method of forming an aluminum oxide MIM capacitor on a semiconductor substrate, comprising the acts of: providing a layer of hemispherical grained polysilicon over a semiconductor substrate; etching said layer of hemispherical grained polysilicon to form an etched layer of hemispherical grained polysilicon; forming a lower capacitor electrode of titanium nitride or boron-doped titanium nitride material over said etched layer of hemispherical grained polysilicon; forming an aluminum oxide dielectric layer by atomic layer deposition in contact with said lower capacitor electrode; and forming an upper capacitor electrode of titanium nitride or boron-doped titanium nitride material in contact with said aluminum oxide dielectric layer.
Claim 50
Independent Claim
104 words
A method of forming an aluminum oxide MIM capacitor on a semiconductor substrate, comprising the acts of: providing a layer of hemispherical grained polysilicon over a semiconductor substrate; etching said layer of hemispherical grained polysilicon to form an etched layer of hemispherical grained polysilicon; forming a lower capacitor electrode of titanium nitride or boron-doped titanium nitride material over said etched layer of hemispherical grained polysilicon; forming an aluminum oxide dielectric layer by atomic layer deposition in contact with said lower capacitor electrode; and forming an upper capacitor electrode of titanium nitride or boron-doped titanium nitride material in contact with said aluminum oxide dielectric layer.
Claim 51
Dependent Claim
24 words
The method of claim 43 , wherein each of said lower and upper electrodes is a titanium nitride layer formed by atomic layer deposition.
Claim 52
Dependent Claim
26 words
The method of claim 44 , wherein said titanium nitride layer is formed by atomic layer deposition using a nitrogen source and a titanium source precursor.
Claim 53
Dependent Claim
27 words
The method of claim 45 , wherein said titanium source precursor is selected from the group consisting of titanium tetrachloride, titanium trichloride, bis(cyclopentadienyl)titanium dichloride and cyclopentadienyltitanium trichloride.
Claim 54
Dependent Claim
31 words
The method of claim 43 , wherein said act of etching said layer of hemispherical grained polysilicon further comprises contacting said layer of hemispherical grained polysilicon with a solution of HF.
Claim 55
Dependent Claim
21 words
The method of claim 47 further comprising the act of subjecting said layer of hemispherical grained polysilicon to an RTN process.
Claim 56
Dependent Claim
21 words
The method of claim 48 further comprising the act of subjecting said layer of hemispherical grained polysilicon to an anneal process.
Claim 57
Dependent Claim
22 words
The method of claim 49 further comprising the act of subjecting said layer of hemispherical grained polysilicon to a PH 3 anneal.
Claim 58
Independent Claim
72 words
A method of forming an aluminum oxide MIM capacitor on a semiconductor substrate, comprising the acts of: forming a lower capacitor electrode over said semiconductor substrate; forming an aluminum oxide dielectric layer by atomic layer deposition over said lower capacitor electrode; and forming an upper capacitor electrode over said aluminum oxide dielectric layer, wherein each of said lower and upper electrodes is a boron-doped titanium nitride layer formed by chemical vapor deposition.
Claim 59
Independent Claim
72 words
A method of forming an aluminum oxide MIM capacitor on a semiconductor substrate, comprising the acts of: forming a lower capacitor electrode over said semiconductor substrate; forming an aluminum oxide dielectric layer by atomic layer deposition over said lower capacitor electrode; and forming an upper capacitor electrode over said aluminum oxide dielectric layer, wherein each of said lower and upper electrodes is a boron-doped titanium nitride layer formed by chemical vapor deposition.
Claim 60
Independent Claim
76 words
A method of forming an aluminum oxide MIM capacitor on a semiconductor substrate, comprising the acts of: forming a lower capacitor electrode over said semiconductor substrate; forming an aluminum oxide dielectric layer by atomic layer deposition over said lower capacitor electrode; and forming an upper capacitor electrode over said aluminum oxide dielectric layer, wherein each of said lower and upper electrodes is a boron-doped titanium nitride layer formed by incorporating boron into a titanium nitride layer.
Claim 61
Independent Claim
76 words
A method of forming an aluminum oxide MIM capacitor on a semiconductor substrate, comprising the acts of: forming a lower capacitor electrode over said semiconductor substrate; forming an aluminum oxide dielectric layer by atomic layer deposition over said lower capacitor electrode; and forming an upper capacitor electrode over said aluminum oxide dielectric layer, wherein each of said lower and upper electrodes is a boron-doped titanium nitride layer formed by incorporating boron into a titanium nitride layer.
Claim 62
Dependent Claim
33 words
The method of claim 52 , wherein said act of incorporating boron into said titanium nitride layer further comprises the act of exposing said titanium nitride layer to B 2 H 6 .
Claim 63
Dependent Claim
43 words
The method of claim 53 , wherein said act of incorporating boron into a titanium nitride layer further comprises the act of exposing said titanium nitride layer to B 2 H 6 at a temperature of about 200° C. to about 600° C.
Claim 64
Dependent Claim
23 words
The method of claim 54 further comprising the act of exposing said titanium nitride layer and B 2 H 6 to ultraviolet light.
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