US6229211B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and method of manufacturing the same
Assignee: Toshiba Corp
•
Filing: 1999-07-29
•
Granted: 2001-05-08
•
Expires: 2019-07-29
Abstract
Abstract A semiconductor device comprises a base layer, a barrier metal layer formed on the base layer and a metal interconnect formed on the barrier metal layer, the barrier metal layer being made of at least one element α selected from metal elements and at least one element β selected from a group of boron, oxygen, carbon and nitrogen and having at least two compound films αβn with different compositional ratios in atomic level arranged to form a laminate. When the elements α contained in the compound films αβn are same and identical and at least one of the at least two compound films αβn is a compound film αβx (x>1), the via resistance and the interconnect resistance of the device can be reduced, while maintaining the high barrier effect.
Inventors
- 👤 Takashi Kawanoue
- 👤 Junichi Wada
- 👤 Tetsuo Matsuda
- 👤 Hisashi Kaneko
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:35
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/035; H10W20/037; H10W20/0372; H10W20/047; H10W20/048; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4462
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
102 words
A semiconductor device comprising: a base layer; a barrier metal layer formed on said base layer; and a metal interconnect formed on said barrier metal layer; said barrier metal layer being made of at least one element α selected from metal elements and at least one element β selected from a group consisting of boron, oxygen, carbon and nitrogen and having a laminated structure formed of at least two compound films αβn with different compositional ratios in atomic level, n being a ratio of the number of atoms of said element β relative to the number of atoms of said element α.
Claim 2
Dependent Claim
102 words
A semiconductor device comprising: a base layer; a barrier metal layer formed on said base layer; and a metal interconnect formed on said barrier metal layer; said barrier metal layer being made of at least one element α selected from metal elements and at least one element β selected from a group consisting of boron, oxygen, carbon and nitrogen and having a laminated structure formed of at least two compound films αβn with different compositional ratios in atomic level, n being a ratio of the number of atoms of said element β relative to the number of atoms of said element α.
Claim 3
Dependent Claim
26 words
A semiconductor device according to claim 1 , wherein said metal element belongs to one of a IVB group, a VB group and a VIB group.
Claim 4
Dependent Claim
35 words
A semiconductor device according to claim 1 , wherein at least one of said at least two compound films αβn is a compound film αβx (x>1) made of said element α and said element β.
Claim 5
Dependent Claim
23 words
A semiconductor device according to claim 3 , wherein said compound film αβx (x>1) has a film thickness not greater than 10 nm.
Claim 6
Dependent Claim
145 words
A semiconductor device comprising: a base layer; a barrier metal layer formed on said base layer; and a metal interconnect formed on said barrier metal layer; said barrier metal layer being made of at least one element α selected from metal elements and at least one element β selected from a group consisting of boron, oxygen, carbon and nitrogen and having a laminated structure formed of at least two compound films αβn with different compositional ratios in atomic level, n being a ratio of the number of atoms of said element β relative to the number of atoms of said element α; said elements α contained in said at least two compound films αβn being same and identical; at least one of said at least two different compound films αβn being a compound film αβx (x>1) made of said element α and said element β.
Claim 7
Dependent Claim
145 words
A semiconductor device comprising: a base layer; a barrier metal layer formed on said base layer; and a metal interconnect formed on said barrier metal layer; said barrier metal layer being made of at least one element α selected from metal elements and at least one element β selected from a group consisting of boron, oxygen, carbon and nitrogen and having a laminated structure formed of at least two compound films αβn with different compositional ratios in atomic level, n being a ratio of the number of atoms of said element β relative to the number of atoms of said element α; said elements α contained in said at least two compound films αβn being same and identical; at least one of said at least two different compound films αβn being a compound film αβx (x>1) made of said element α and said element β.
Claim 8
Dependent Claim
50 words
A semiconductor device according to claim 5 , wherein said barrier metal layer is formed by laying said compound film αβx (x>1) on a compound film αβy (y≦1) made of said element α and said element β; and said metal interconnect is in contact with said compound film αβx (x>1).
Claim 9
Dependent Claim
50 words
A semiconductor device according to claim 5 , wherein said barrier metal layer is formed by laying a compound film αβy (y≦1) made of said element α and said element β on said compound film αβx (x>1); and said metal interconnect is in contact with said compound film αβy (y≦1).
Claim 10
Dependent Claim
47 words
A semiconductor device according to claim 5 , wherein said barrier metal layer is formed by laying sequentially a compound film αβy (y≦1) made of said element α and said element β, said compound film αβx (x>1) and another compound film αβy (y≦1) to form a laminate.
Claim 11
Dependent Claim
35 words
A semiconductor device according to claim 5 , wherein a total film thickness t of said compound film αβx (x>1) and a total film thickness T of said barrier metal show a relationship of t/T≦0.3.
Claim 12
Dependent Claim
26 words
A semiconductor device according to claim 5 , wherein said metal element belongs to one of a IVB group, a VB group and a VIB group.
Claim 13
Dependent Claim
24 words
A semiconductor device according to claim 5 , wherein a film thickness of said compound film αβx (x>1) is not greater than 10 nm.
Claim 14
Dependent Claim
24 words
A semiconductor device according to claim 6 , wherein said x is not smaller than 1.2 and said y is not greater than 0.9.
Claim 15
Dependent Claim
24 words
A semiconductor device according to claim 7 , wherein said x is not smaller than 1.2 and said y is not greater than 0.9.
Claim 16
Dependent Claim
24 words
A semiconductor device according to claim 8 , wherein said x is not smaller than 1.2 and said y is not greater than 0.9.
Claim 17
Dependent Claim
24 words
A semiconductor device according to claim 9 , wherein a film thickness of said compound film αβx (x>1) is not greater than 10 nm.
Claim 18
Dependent Claim
133 words
A semiconductor device comprising: a base layer; a barrier metal layer formed on said base layer; and a metal interconnect formed on said barrier metal layer; said barrier metal layer having a compound film αγx made of at least one element α selected from metal elements and at least one element γ selected from a group consisting of boron, carbon and nitrogen and a compound film αγyOz made of said element α, said element γ and oxygen (O) arranged to form a laminate, each of x and y being a ratio of the number of atoms of said element γ relative to the number of atoms of said element α, and Z being a ratio of the number of atoms of the oxygen relative to the number of atoms of the element α.
Claim 19
Dependent Claim
133 words
A semiconductor device comprising: a base layer; a barrier metal layer formed on said base layer; and a metal interconnect formed on said barrier metal layer; said barrier metal layer having a compound film αγx made of at least one element α selected from metal elements and at least one element γ selected from a group consisting of boron, carbon and nitrogen and a compound film αγyOz made of said element α, said element γ and oxygen (O) arranged to form a laminate, each of x and y being a ratio of the number of atoms of said element γ relative to the number of atoms of said element α, and Z being a ratio of the number of atoms of the oxygen relative to the number of atoms of the element α.
Claim 20
Dependent Claim
16 words
A semiconductor device according to claim 16 , wherein said x is not smaller than 0.2.
Claim 21
Dependent Claim
23 words
A semiconductor device according to claim 16 , wherein a film thickness of said compound film αγyOz is not greater than 3 nm.
Claim 22
Dependent Claim
26 words
A semiconductor device according to claim 16 , wherein said metal element belongs to one of a IVB group, a VB group and a VIB group.
References Cited (Backward Citations)
US4829363A
Cited
JPH0620996A
Cited
US5627102A
Cited
JPH06333927A
Cited
US6090702A
Cited
JPH09115917A
Cited
US6153519A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-05-07 | 2004-11-06 | 2005-05-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-05-07 | 2008-11-06 | 2009-05-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-05-07 | 2012-11-06 | 2013-05-08 | $7700.00 | Window Closed / Lapsed |