Patent US6873038B2 successfully refreshed from Google Patents.
US6873038B2
Expired / Lapsed
US
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Capacitor and semiconductor device and method for fabricating the semiconductor device
Assignee: Fujitsu Ltd
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Filing: 2003-07-30
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Granted: 2005-03-29
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Expires: 2023-07-30
Abstract
Abstract A capacitor comprises a first conducting film 12 formed on a substrate 10 , a first dielectric film 14 formed on the first conducting film, a second conducting film 18 formed on the first dielectric film, a second dielectric film 22 formed above the second conducting film, covering the edge of the second conducting film, a third conducting film 34 formed above the second dielectric film, covering a part of the second dielectric film covering the edge of the second conducting film. The capacitor further comprises an insulation film 28 covering the edge of the second conducing film or the part of the second dielectric film. An effective thickness of the insulation film between the second conducting film and the third conducing film in the region near the edge of the second conducting film can be increased, whereby concentration of electric fields in the region near the edge of the second conducting film. Consequently, the capacitor can have large capacitance without lowering voltage resistance.
Inventors
- 👤 Takeshi Shioga
- 👤 Kazuaki Karasawa
- 👤 Kazuaki Kurihara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 19:37
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/201; H10D84/204; H10D84/212; H10W; H10W20/00; H10W20/40; H10W20/495; H10W20/496; H10W44/00; H10W44/601; H10W70/00; H10W70/60; H10W70/67; H10W70/68; H10W70/685; H10W72/00; H10W90/00; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10W20/20; H10W72/01; H10W72/0198; H10W72/071; H10W72/072; H10W72/07251; H10W72/20; H10W72/231; H10W72/237; H10W72/241; H10W72/247; H10W72/248; H10W72/851; H10W72/874; H10W72/90; H10W72/931; H10W72/936; H10W72/941; H10W72/9415; H10W74/00; H10W74/10; H10W74/111; H10W74/129; H10W74/15; H10W90/701; H10W90/721; H10W90/724; H10W90/728; H10W90/731; H10W90/738
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
94 words
A semiconductor device comprising: a semiconductor element substrate; a passive component mounted on the semiconductor element substrate and electrically connected to electrodes of the semiconductor element substrate; column-shaped conductors formed over the semiconductor element substrate in a region other than a region where the passive component is mounted, and having a height which is substantially flush with at least the upper surface of the passive component, and an insulation layer burying the passive component and the column-shaped conductors, the upper surfaces of the column-shaped conductors being exposed on the surface of the insulation film.
Claim 2
Dependent Claim
94 words
A semiconductor device comprising: a semiconductor element substrate; a passive component mounted on the semiconductor element substrate and electrically connected to electrodes of the semiconductor element substrate; column-shaped conductors formed over the semiconductor element substrate in a region other than a region where the passive component is mounted, and having a height which is substantially flush with at least the upper surface of the passive component, and an insulation layer burying the passive component and the column-shaped conductors, the upper surfaces of the column-shaped conductors being exposed on the surface of the insulation film.
Claim 3
Dependent Claim
75 words
A semiconductor device comprising: a semiconductor element substrate; a passive component mounted on the semiconductor element substrate and electrically connected to electrodes of the semiconductor element substrate; column-shaped conductors formed over the semiconductor element substrate in a region other than a region where the passive component is mounted; and an insulation layer burying the passive component and the column-shaped conductors, the semiconductor element substrate being electrically connected to an outside terminal via the column-shaped conductors.
Claim 4
Dependent Claim
75 words
A semiconductor device comprising: a semiconductor element substrate; a passive component mounted on the semiconductor element substrate and electrically connected to electrodes of the semiconductor element substrate; column-shaped conductors formed over the semiconductor element substrate in a region other than a region where the passive component is mounted; and an insulation layer burying the passive component and the column-shaped conductors, the semiconductor element substrate being electrically connected to an outside terminal via the column-shaped conductors.
Claim 5
Dependent Claim
54 words
A semiconductor device according to claim 1 wherein the passive component includes a passive element formed on a side of a support substrate opposed to the semiconductor element substrate, and the passive component includes electrodes electrically connected to the passive element and exposed on the side of the upper side of the support substrate.
Claim 6
Dependent Claim
34 words
A semiconductor device according to claim 3 , wherein the electrodes exposed on the side of the upper surface of the support substrate are electrically connected to the passive element through the support substrate.
Claim 7
Dependent Claim
34 words
A semiconductor device according to claim 1 , wherein a pitch of a plurality of the electrodes of the semiconductor element substrate is smaller than a pitch of a plurality of the column-shaped conductors.
Claim 8
Dependent Claim
32 words
A semiconductor device according to claim 3 , wherein the passive component further comprises through-electrodes insulated from the passive element and electrically connected to the semiconductor element substrate through the passive component.
Claim 9
Dependent Claim
22 words
A semiconductor device according to claim 1 , wherein the upper surface of the passive component is covered with the insulation layer.
Claim 10
Dependent Claim
44 words
A semiconductor device according to claim 6 , further comprising: a wiring layer formed on the semiconductor element substrate and having relay wiring, the passive element, the column-shaped conductors or the through-electrodes are electrically connected to the semiconductor element substrate via the relay wiring.
Claim 11
Dependent Claim
31 words
A semiconductor device according to claim 1 , wherein the passive component is flip chip-bonded to the electrodes of the semiconductor element substrate or the electrodes formed on the wiring layer.
Claim 12
Dependent Claim
20 words
A semiconductor device according to claim 1 , wherein the passive component is a capacitor, a resistor, or an inductor.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2008-03-28 | 2008-09-27 | 2009-03-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2012-03-28 | 2012-09-27 | 2013-03-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2016-03-28 | 2016-09-27 | 2017-03-29 | $7700.00 | Window Closed / Lapsed |