US6753210B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Metal fuse for semiconductor devices
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 2002-09-17
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Granted: 2004-06-22
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Expires: 2022-09-17
Abstract
Abstract A method of forming a metal fuse comprising the following steps. A structure is provided having exposed adjacent metal structures. A patterned dielectric layer is formed over the structure. The patterned dielectric layer having via openings 2exposing at least a portion of the exposed adjacent metal structures. A metal fuse portion is formed between at least two of the adjacent metal structures without additional photolithography, etch or deposition processes. The metal fuse portion including a portion having a nominal mass and a sub-portion of the portion having a mass less than the nominal mass so that the metal fuse portion is more easily disconnected at the less massive sub-portion during programming of the metal fuse portion.
Inventors
- 👤 Shin-puu Jeng
- 👤 Chi-Hsi Wu
- 👤 Shang Y. Hou
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 18:25
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/493; H10W20/494
Claims Analysis
Total Claims: 50
Claim 1
Independent Claim
114 words
A method of forming a metal fuse, comprising the steps of: providing a structure having exposed adjacent metal structures; forming a patterned dielectric layer over the structure; the patterned dielectric layer having via openings exposing at least a portion of the exposed adjacent metal structures; and forming a metal fuse portion between at least two of the adjacent metal structures without additional photolithography, etch or deposition processes; the metal fuse portion including a portion having a nominal mass and a sub-portion of the portion having a mass less than the nominal mass so that the metal fuse portion is more easily disconnected at the less massive sub-portion during programming of the metal fuse portion.
Claim 2
Independent Claim
114 words
A method of forming a metal fuse, comprising the steps of: providing a structure having exposed adjacent metal structures; forming a patterned dielectric layer over the structure; the patterned dielectric layer having via openings exposing at least a portion of the exposed adjacent metal structures; and forming a metal fuse portion between at least two of the adjacent metal structures without additional photolithography, etch or deposition processes; the metal fuse portion including a portion having a nominal mass and a sub-portion of the portion having a mass less than the nominal mass so that the metal fuse portion is more easily disconnected at the less massive sub-portion during programming of the metal fuse portion.
Claim 3
Dependent Claim
39 words
The method of claim 1 , wherein the structure includes a semiconductor wafer or substrate, active and passive devices formed within the wafer or substrate, conductive layers and dielectric layers formed over the surface of the wafer or substrate.
Claim 4
Dependent Claim
80 words
The method of claim 1 , wherein the exposed adjacent metal structures are composed of a metal selected from the group consisting of copper, aluminum, gold, titanium, silver and tungsten; the patterned dielectric layer is composed of a material selected from the group consisting of undoped SiO 2 (USG), fluorinated SiO 2 (FSG) and low-k dielectric material; and the metal fuse portion is composed of a metal selected from the group consisting of aluminum, copper, gold, titanium, silver and tungsten.
Claim 5
Dependent Claim
36 words
The method of claim 1 , wherein the exposed adjacent metal structures are composed of copper; the patterned dielectric layer is composed of undoped SiO 2 ; and the metal fuse portion is composed of aluminum.
Claim 6
Dependent Claim
21 words
The method of claim 1 , wherein the less massive sub-portion has a thickness of from about 500 to 10,000 Å.
Claim 7
Dependent Claim
21 words
The method of claim 1 , wherein the less massive sub-portion has a thickness of from about 1000 to 4000 Å.
Claim 8
Dependent Claim
21 words
The method of claim 1 , wherein the less massive sub-portion has a width of from about 1000 to 20,000 Å.
Claim 9
Dependent Claim
21 words
The method of claim 1 , wherein the less massive sub-portion has a width of from about 2000 to 5000 Å.
Claim 10
Dependent Claim
15 words
The method of claim 1 , wherein the metal fuse portion includes a trench portion.
Claim 11
Dependent Claim
27 words
The method of claim 1 , wherein the metal fuse portion includes a trench portion; the trench portion having side wall portions that comprise the thinner sub-portion.
Claim 12
Dependent Claim
15 words
The method of claim 1 , wherein the metal fuse portion includes a trench portion.
Claim 13
Dependent Claim
27 words
The method of claim 1 , wherein the metal fuse portion includes a trench portion; the trench portion having side wall portions that comprise the thinner sub-portion.
Claim 14
Dependent Claim
15 words
The method of claim 1 , wherein the metal fuse portion includes dual trench portions.
Claim 15
Dependent Claim
29 words
The method of claim 1 , wherein the metal fuse portion includes dual trench portions; the dual trench portions having respective side wall portions that comprise the thinner sub-portion.
Claim 16
Dependent Claim
20 words
The method of claim 1 , wherein the metal fuse portion includes a neck portion that comprises the thinner sub-portion.
Claim 17
Dependent Claim
20 words
The method of claim 1 , wherein the metal fuse portion are programmed by the use of a laser beam.
Claim 18
Independent Claim
221 words
A method of forming a metal fuse, comprising the steps of: providing a structure; forming an IMD layer over the structure; the IMD layer having at least two adjacent metal structures formed therethrough; the at least two adjacent metal structures being formed of a first metal; forming a dielectric layer over the IMD layer and the metal structures; simultaneously: 1) forming vias through the dielectric layer to expose at least a portion of the metal structures formed through the IMD layer; and 2) forming a fuse trench into the dielectric layer between at least two of the adjacent metal structures to form a patterned dielectric layer; the fuse trench having a bottom and side walls; sputtering a second metal over the patterned dielectric layer, filling the vias and lining the fuse trench so that the second metal formed over the side walls of the fuse trench have a thickness less than the thickness of the second metal formed over the bottom of the fuse trench and the second metal formed over the patterned dielectric layer; and patterning the second metal layer to form at least a fuse between the at least two of the adjacent metal structures; whereby the fuse is more easily disconnected at the thinner second metal fuse trench side wall portions during programming of the metal fuse portion.
Claim 19
Independent Claim
221 words
A method of forming a metal fuse, comprising the steps of: providing a structure; forming an IMD layer over the structure; the IMD layer having at least two adjacent metal structures formed therethrough; the at least two adjacent metal structures being formed of a first metal; forming a dielectric layer over the IMD layer and the metal structures; simultaneously: 1) forming vias through the dielectric layer to expose at least a portion of the metal structures formed through the IMD layer; and 2) forming a fuse trench into the dielectric layer between at least two of the adjacent metal structures to form a patterned dielectric layer; the fuse trench having a bottom and side walls; sputtering a second metal over the patterned dielectric layer, filling the vias and lining the fuse trench so that the second metal formed over the side walls of the fuse trench have a thickness less than the thickness of the second metal formed over the bottom of the fuse trench and the second metal formed over the patterned dielectric layer; and patterning the second metal layer to form at least a fuse between the at least two of the adjacent metal structures; whereby the fuse is more easily disconnected at the thinner second metal fuse trench side wall portions during programming of the metal fuse portion.
Claim 20
Dependent Claim
39 words
The method of claim 17 , wherein the structure includes a semiconductor wafer or substrate, active and passive devices formed within the wafer or substrate, conductive layers and dielectric layers formed over the surface of the wafer or substrate.
Claim 21
Dependent Claim
106 words
The method of claim 17 , wherein the at least two adjacent metal structures are composed of a metal selected from the group consisting of copper, aluminum, gold, titanium, silver and tungsten; the IMD layer is composed of a material selected from the group consisting of undoped SiO 2 (USG), fluorinated SiO 2 (FSG) or low-k dielectric material; the dielectric layer is composed of a material selected from the group consisting of undoped SiO 2 (USG), fluorinated SiO 2 (FSG) or low-k dielectric material; and the second metal is composed of a metal selected from the group consisting of aluminum, copper, gold, titanium, silver and tungsten.
Claim 22
Dependent Claim
46 words
The method of claim 17 , wherein the at least two adjacent metal structures are composed of copper; the IMD layer is composed of undoped SiO 2 ; the dielectric layer is composed of undoped SiO 2 ; and the second metal is composed of aluminum.
Claim 23
Dependent Claim
25 words
The method of claim 17 , wherein the second metal fuse trench side wall portions have a thickness of from about 500 to 10,000 Å.
Claim 24
Dependent Claim
25 words
The method of claim 17 , wherein the second metal fuse trench side wall portions have a thickness of from about 1000 to 4000 Å.
Claim 25
Dependent Claim
18 words
The method of claim 17 , wherein the fuse is programmed by the use of a laser beam.
Claim 26
Independent Claim
216 words
A method of forming a metal fuse, comprising the steps of: providing a structure; forming an IMD layer over the structure; the IMD layer having at least two adjacent metal structures formed therethrough; the at least two adjacent metal structures being formed of a first metal; forming a dielectric layer over the IMD layer and the metal structures; forming a fuse trench into the dielectric layer between at least two of the adjacent metal structures to expose at least a portion of the metal structures formed through the IMD layer and to form a patterned dielectric layer; the fuse trench having a bottom and side walls; sputtering a second metal over the patterned dielectric layer, lining the fuse trench so that the second metal formed over the side walls of the fuse trench have a thickness less than the thickness of the second metal formed over the bottom of the fuse trench and the second metal formed over the patterned second dielectric layer; and patterning the second metal layer to form at least a fuse between the at least two of the adjacent metal structures; the fuse not having via openings therein whereby the fuse is more easily disconnected at the thinner second metal fuse trench side wall portions during programming of the metal fuse portion.
Claim 27
Independent Claim
216 words
A method of forming a metal fuse, comprising the steps of: providing a structure; forming an IMD layer over the structure; the IMD layer having at least two adjacent metal structures formed therethrough; the at least two adjacent metal structures being formed of a first metal; forming a dielectric layer over the IMD layer and the metal structures; forming a fuse trench into the dielectric layer between at least two of the adjacent metal structures to expose at least a portion of the metal structures formed through the IMD layer and to form a patterned dielectric layer; the fuse trench having a bottom and side walls; sputtering a second metal over the patterned dielectric layer, lining the fuse trench so that the second metal formed over the side walls of the fuse trench have a thickness less than the thickness of the second metal formed over the bottom of the fuse trench and the second metal formed over the patterned second dielectric layer; and patterning the second metal layer to form at least a fuse between the at least two of the adjacent metal structures; the fuse not having via openings therein whereby the fuse is more easily disconnected at the thinner second metal fuse trench side wall portions during programming of the metal fuse portion.
Claim 28
Dependent Claim
39 words
The method of claim 24 , wherein the structure includes a semiconductor wafer or substrate, active and passive devices formed within the wafer or substrate, conductive layers and dielectric layers formed over the surface of the wafer or substrate.
Claim 29
Dependent Claim
106 words
The method of claim 24 , wherein the at least two adjacent metal structures are composed of a metal selected from the group consisting of copper, aluminum, gold, titanium, silver and tungsten; the IMD layer is composed of a material selected from the group consisting of undoped SiO 2 (USG), fluorinated SiO 2 (FSG) and low-k dielectric material; the dielectric layer is composed of a material selected from the group consisting of undoped SiO 2 (USG), fluorinated SiO 2 (FSG) and low-k dielectric material; and the second metal is composed of a metal selected from the group consisting of aluminum, copper, gold, titanium, silver and tungsten.
Claim 30
Dependent Claim
46 words
The method of claim 24 , wherein the at least two adjacent metal structures are composed of copper; the IMD layer is composed of undoped SiO 2 ; the dielectric layer is composed of undoped SiO 2 ; and the second metal is composed of aluminum.
Claim 31
Dependent Claim
25 words
The method of claim 24 , wherein the second metal fuse trench side wall portions have a thickness of from about 500 to 10,000 Å.
Claim 32
Dependent Claim
25 words
The method of claim 24 , wherein the second metal fuse trench side wall portions have a thickness of from about 1000 to 4000 Å.
Claim 33
Dependent Claim
18 words
The method of claim 24 , wherein the fuse is programmed by the use of a laser beam.
Claim 34
Independent Claim
226 words
A method of forming a metal fuse, comprising the steps of: providing a structure; forming an IMD layer over the structure; the IMD layer having at least two adjacent metal structures formed therethrough; the at least two adjacent metal structures being formed of a first metal; forming a dielectric layer over the IMD layer and the metal structures; simultaneously: 1) forming vias through the dielectric layer to expose at least a portion of the metal structures formed through the IMD layer; and 2) forming two adjacent fuse trenches into the dielectric layer between at least two of the adjacent metal structures to form a patterned dielectric layer; each fuse trench having a bottom and side walls; sputtering a second metal over the patterned dielectric layer, filling the vias and lining the adjacent fuse trenches so that the second metal formed over the respective side walls of the fuse trenches have a thickness less than the thickness of the second metal formed over the bottoms of the respective fuse trenches and the second metal formed over the patterned second dielectric layer; and patterning the second metal layer to form at least a fuse between the at least two of the adjacent metal structures; whereby the fuse is more easily disconnected at the thinner second metal fuse trench side wall portions during programming of the metal fuse portion.
Claim 35
Independent Claim
226 words
A method of forming a metal fuse, comprising the steps of: providing a structure; forming an IMD layer over the structure; the IMD layer having at least two adjacent metal structures formed therethrough; the at least two adjacent metal structures being formed of a first metal; forming a dielectric layer over the IMD layer and the metal structures; simultaneously: 1) forming vias through the dielectric layer to expose at least a portion of the metal structures formed through the IMD layer; and 2) forming two adjacent fuse trenches into the dielectric layer between at least two of the adjacent metal structures to form a patterned dielectric layer; each fuse trench having a bottom and side walls; sputtering a second metal over the patterned dielectric layer, filling the vias and lining the adjacent fuse trenches so that the second metal formed over the respective side walls of the fuse trenches have a thickness less than the thickness of the second metal formed over the bottoms of the respective fuse trenches and the second metal formed over the patterned second dielectric layer; and patterning the second metal layer to form at least a fuse between the at least two of the adjacent metal structures; whereby the fuse is more easily disconnected at the thinner second metal fuse trench side wall portions during programming of the metal fuse portion.
Claim 36
Dependent Claim
39 words
The method of claim 31 , wherein the structure includes a semiconductor wafer or substrate, active and passive devices formed within the wafer or substrate, conductive layers and dielectric layers formed over the surface of the wafer or substrate.
Claim 37
Dependent Claim
106 words
The method of claim 31 , wherein the at least two adjacent metal structures are composed of a metal selected from the group consisting of copper, aluminum, gold, titanium, silver and tungsten; the IMD layer is composed of a material selected from the group consisting of undoped SiO 2 (USG), fluorinated SiO 2 (FSG) and low-k dielectric material; the dielectric layer is composed of a material selected from the group consisting of undoped SiO 2 (USG), fluorinated SiO 2 (FSG) and low-k dielectric material; and the second metal is composed of a metal selected from the group consisting of aluminum, copper, gold, titanium, silver and tungsten.
Claim 38
Dependent Claim
46 words
The method of claim 31 , wherein the at least two adjacent metal structures are composed of copper; the IMD layer is composed of undoped SiO 2 ; the dielectric layer is composed of undoped SiO 2 ; and the second metal is composed of aluminum.
Claim 39
Dependent Claim
25 words
The method of claim 31 , wherein the second metal fuse trench side wall portions have a thickness of from about 500 to 10,000 Å.
Claim 40
Dependent Claim
25 words
The method of claim 31 , wherein the second metal fuse trench side wall portions have a thickness of from about 1000 to 4000 Å.
Claim 41
Dependent Claim
18 words
The method of claim 31 , wherein the fuse is programmed by the use of a laser beam.
Claim 42
Independent Claim
140 words
A method of forming a metal fuse, comprising the steps of: providing a structure; forming an IMD layer over the structure; the IMD layer having at least two adjacent metal structures formed therethrough; the at least two adjacent metal structures being formed of a first metal; forming a dielectric layer over the IMD layer and the metal structures; forming vias through the dielectric layer to expose at least a portion of the metal structures formed through the IMD layer; forming a second metal over the patterned dielectric layer, filling the vias; and patterning the second metal layer to form at least a fuse between the at least two of the adjacent metal structures; the fuse having wider portions connected by a narrower portion whereby the fuse is more easily disconnected at the narrower portion during programming of the metal fuse.
Claim 43
Independent Claim
140 words
A method of forming a metal fuse, comprising the steps of: providing a structure; forming an IMD layer over the structure; the IMD layer having at least two adjacent metal structures formed therethrough; the at least two adjacent metal structures being formed of a first metal; forming a dielectric layer over the IMD layer and the metal structures; forming vias through the dielectric layer to expose at least a portion of the metal structures formed through the IMD layer; forming a second metal over the patterned dielectric layer, filling the vias; and patterning the second metal layer to form at least a fuse between the at least two of the adjacent metal structures; the fuse having wider portions connected by a narrower portion whereby the fuse is more easily disconnected at the narrower portion during programming of the metal fuse.
Claim 44
Dependent Claim
40 words
The method of claim 38 , wherein the structure 10 includes a semiconductor wafer or substrate, active and passive devices formed within the wafer or substrate, conductive layers and dielectric layers formed over the surface of the wafer or substrate.
Claim 45
Dependent Claim
106 words
The method of claim 38 , wherein the at least two adjacent metal structures are composed of a metal selected from the group consisting of copper, aluminum, gold, titanium, silver and tungsten; the IMD layer is composed of a material selected from the group consisting of undoped SiO 2 (USG), fluorinated SiO 2 (FSG) and low-k dielectric material; the dielectric layer is composed of a material selected from the group consisting of undoped SiO 2 (USG), fluorinated SiO 2 (FSG) and low-k dielectric material; and the second metal is composed of a metal selected from the group consisting of aluminum, copper, gold, titanium, silver and tungsten.
Claim 46
Dependent Claim
46 words
The method of claim 38 , wherein the at least two adjacent metal structures are composed of copper; the IMD layer is composed of undoped SiO 2 ; the dielectric layer is composed of undoped SiO 2 ; and the second metal is composed of aluminum.
Claim 47
Dependent Claim
21 words
The method of claim 38 , wherein the narrower fuse portion has a width of from about 1000 to 20,000 Å.
Claim 48
Dependent Claim
21 words
The method of claim 38 , wherein the narrower fuse portion has a width of from about 2000 to 5000 Å.
Claim 49
Dependent Claim
18 words
The method of claim 38 , wherein the fuse is programmed by the use of a laser beam.
Claim 50
Dependent Claim
25 words
The method of claim 38 , wherein the wider portions of the fuse is connected to the narrower fuse portion through intermediate width fuse portions.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2007-06-22 | 2007-12-22 | 2008-06-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2011-06-22 | 2011-12-22 | 2012-06-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2015-06-22 | 2015-12-22 | 2016-06-22 | $7700.00 | Window Closed / Lapsed |