Patent US6680540B2 successfully refreshed from Google Patents.
US6680540B2
Expired / Lapsed
US
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Semiconductor device having cobalt alloy film with boron
Assignee: Renesas Electronics Corp
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Filing: 2001-03-07
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Granted: 2004-01-20
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Expires: 2021-03-07
Abstract
Abstract In order to prevent a rise in resistance due to oxidation of copper wiring and diffusion of copper, a semiconductor device is provided which contains a wire protective film 1 covering the top of the copper wiring 2 formed in the insulation film and a barrier film surrounding the side and bottom of the copper wiring. The wire protective film and/or barrier film is formed with a cobalt alloy film containing (1) cobalt, (2) at least one of chromium, molybdenum, tungsten, rhenium, thallium and phosphorus, and (3) boron.
Inventors
- 👤 Hiroshi Nakano
- 👤 Takeyuki Itabashi
- 👤 Haruo Akahoshi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 16:11
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/037; H10P; H10P14/00; H10P14/40; H10P14/46; H10P14/47; H10W20/042; H10W20/044; H10W20/052; H10W20/0526; H10W20/054; H10W20/071; H10W20/074; H10W20/081; H10W20/084; H10W20/087; H10W20/40; H10W20/41; H10W20/425
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
79 words
A semiconductor device comprising: (1) multiple layers of copper wires formed in an insulation film, (2) a wire protective film covering the top of said copper wire, and (3) a barrier film surrounding the side and bottom of said copper wiring; said semiconductor device characterized in that at least one of said wiring protective film and the barrier film is formed of cobalt alloy film containing boron and at least one of chromium, molybdenum, tungsten, rhenium, thallium and phosphorous.
Claim 2
Dependent Claim
79 words
A semiconductor device comprising: (1) multiple layers of copper wires formed in an insulation film, (2) a wire protective film covering the top of said copper wire, and (3) a barrier film surrounding the side and bottom of said copper wiring; said semiconductor device characterized in that at least one of said wiring protective film and the barrier film is formed of cobalt alloy film containing boron and at least one of chromium, molybdenum, tungsten, rhenium, thallium and phosphorous.
Claim 3
Dependent Claim
80 words
A semiconductor device according to claim 1 characterized in that multiple layers of copper wires are formed in the insulation film, a wiring protective film and barrier film are covered with cobalt alloy film containing (1) cobalt, (2) at least one of chromium, molybdenum, tungsten, rhenium, thallium and phosphorus, and (3) boron, and at least a part of the copper wire on the upper layer is electrically connected with the copper wire on the lower layer through said barrier layer.
Claim 4
Dependent Claim
23 words
A semiconductor device according to claim 1 or 2 characterized in that the insulating film has a dielectric constant of 3 or less.
Claim 5
Dependent Claim
56 words
A semiconductor device according to claim 1 or 2 characterized in that said cobalt alloy film has a preferred thickness of 100 nm or less, and contains 50 to 95 atomic percent cobalt, 1 to 40 atomic percent at least one of chromium, molybdenum, tungsten, rhenium, thallium and phosphorus, and 0.1 to 10 atomic percent boron.
Claim 6
Dependent Claim
76 words
A semiconductor device according to claim 1 or 2 characterized in that multiple layers of copper wires are formed in the insulation film, wiring protective film and barrier film are covered with cobalt alloy film containing (1) cobalt, (2) at least one of chromium, molybdenum, tungsten, rhenium, thallium and phosphorus, and (3) boron, and the copper wire on the upper layer is electrically connected with the copper wire on the lower layer through said cobalt alloy.
Claim 7
Dependent Claim
46 words
A semiconductor device according to claim 1 or 2 characterized in that an insulation film, serving as an etch stop layer that stops etching on said insulation film, is further formed on the surface of said insulation film except where the wire protective film is formed.
Claim 8
Dependent Claim
83 words
A semiconductor device according to claim 1 or claim 2 characterized in that multiple layers of copper wires are formed in the insulation film, a wiring protective film and barrier film are covered with cobalt alloy film containing (1) cobalt, (2) at least one of chromium, molybdenum, tungsten, rhenium, thallium and phosphorus, and (3) boron, and at least a part of the copper wire on the upper layer is electrically connected with the copper wire on the lower layer through the barrier film.
Claim 9
Dependent Claim
20 words
A semiconductor device described in claim 1 through claim 7 characterized in that said cobalt alloy does not contain palladium.
Claim 10
Dependent Claim
64 words
A semiconductor device comprising: multiple layers of copper wires in an insulation film, a wire protective film on said copper wires, and a barrier film surrounding positions of said copper wiring, wherein at least one of said wiring protective film and the barrier film is formed of cobalt alloy film containing boron and at least one of chromium, molybdenum, tungsten, rhenium, thallium and phosphorous.
Claim 11
Dependent Claim
64 words
A semiconductor device comprising: multiple layers of copper wires in an insulation film, a wire protective film on said copper wires, and a barrier film surrounding positions of said copper wiring, wherein at least one of said wiring protective film and the barrier film is formed of cobalt alloy film containing boron and at least one of chromium, molybdenum, tungsten, rhenium, thallium and phosphorous.
Claim 12
Dependent Claim
69 words
A semiconductor device according to claim 9 , wherein said wiring protection film and said barrier film are covered with cobalt alloy film containing (1) cobalt, (2) at least one of chromium, molybdenum, tungsten, rhenium, thallium and phosphorous, and (3) boron, and at least a part of the copper wire on an upper layer is electrically connected with the copper wire on a lower layer through said barrier layer.
Claim 13
Dependent Claim
20 words
A semiconductor device according to claim 9 , wherein the insulating film has a dielectric constant of 3 or less.
Claim 14
Dependent Claim
53 words
A semiconductor device according to claim 9 , wherein said cobalt alloy film has a preferred thickness of 100 nm or less, and contains 50 to 95 atomic percent cobalt, 1 to 40 atomic percent at least one of chromium, molybdenum, tungsten, rhenium, thallium and phosphorous, and 0.1 to 10 atomic percent boron.
Claim 15
Dependent Claim
64 words
A semiconductor device according to claim 9 , wherein said wiring protective film and said barrier film are covered with cobalt alloy film containing (1) cobalt, (2) at least one of chromium, molybdenum, tungsten, rhenium, thallium and phosphorous, and (3) boron, and the copper wire on an upper layer is electrically connected with the copper wire on a lower layer through said cobalt alloy.
Claim 16
Dependent Claim
44 words
A semiconductor device according to claim 9 , wherein an insulation film is provided as an etch stop layer that stops etching on said insulation film and is formed on the surface of said insulation film except where the wire protective film is formed.
Claim 17
Dependent Claim
16 words
A semiconductor device according to claim 10 , wherein said cobalt alloy does not contain palladium.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2007-01-19 | 2007-07-21 | 2008-01-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2011-01-19 | 2011-07-21 | 2012-01-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2015-01-19 | 2015-07-21 | 2016-01-20 | $7700.00 | Window Closed / Lapsed |