Patent US5582867A successfully refreshed from Google Patents.
Patent US6653199B2 successfully refreshed from Google Patents.
US6653199B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming inside rough and outside smooth HSG electrodes and capacitor structure
Assignee: Micron Technology Inc
•
Filing: 2001-10-09
•
Granted: 2003-11-25
•
Expires: 2021-10-09
Abstract
Abstract A container capacitor and method of forming the container capacitor are provided. The container capacitor comprises a lower electrode fabricated by forming a layer of doped polysilicon within a container in an insulative layer disposed on a substrate; forming a barrier layer over the polysilicon layer within the container; removing the insulative layer to expose the polysilicon layer outside the container; nitridizing the exposed polysilicon layer at a low temperature, preferably by remote plasma nitridation; removing the barrier layer to expose the inner surface of the polysilicon layer within the container; and forming HSG polysilicon over the inner surface of the polysilicon layer. The capacitor can be completed by forming a dielectric layer over the lower electrode, and an upper electrode over the dielectric layer. The cup-shaped bottom electrode formed within the container defines an interior surface comprising HSG polysilicon, and an exterior surface comprising smooth polysilicon.
Inventors
- 👤 Lingyi A. Zheng
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:15
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/712; H10D1/01; H10D1/041; H10D1/042; H10D1/716; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283
Claims Analysis
Total Claims: 145
Claim 1
Independent Claim
85 words
A method of forming a container electrode, comprising the steps of: forming a layer of doped polysilicon within an opening formed in an insulative layer disposed on a substrate; forming a barrier layer over the polysilicon layer within the opening; removing the insulative layer to expose exterior surfaces of the polysilicon layer; nitridizing the exposed exterior surfaces of the polysilicon layer; removing the barrier layer to expose interior surfaces of the polysilicon layer; and forming HSG polysilicon over the interior surfaces of the polysilicon layer.
Claim 2
Independent Claim
85 words
A method of forming a container electrode, comprising the steps of: forming a layer of doped polysilicon within an opening formed in an insulative layer disposed on a substrate; forming a barrier layer over the polysilicon layer within the opening; removing the insulative layer to expose exterior surfaces of the polysilicon layer; nitridizing the exposed exterior surfaces of the polysilicon layer; removing the barrier layer to expose interior surfaces of the polysilicon layer; and forming HSG polysilicon over the interior surfaces of the polysilicon layer.
Claim 3
Independent Claim
89 words
A method of forming a container electrode, comprising the steps of: forming a layer of doped polysilicon within a container formed in an insulative layer disposed on a substrate; forming a barrier layer over the polysilicon layer within the container; removing the insulative layer to expose the polysilicon layer outside the container; nitridizing the exposed polysilicon layer at a temperature of about 550° C. or less; removing the barrier layer to expose the polysilicon layer within the container; and forming HSG polysilicon over the polysilicon layer within the container.
Claim 4
Independent Claim
89 words
A method of forming a container electrode, comprising the steps of: forming a layer of doped polysilicon within a container formed in an insulative layer disposed on a substrate; forming a barrier layer over the polysilicon layer within the container; removing the insulative layer to expose the polysilicon layer outside the container; nitridizing the exposed polysilicon layer at a temperature of about 550° C. or less; removing the barrier layer to expose the polysilicon layer within the container; and forming HSG polysilicon over the polysilicon layer within the container.
Claim 5
Dependent Claim
19 words
The method of claim 2 , wherein the step of nitridizing the polysilicon layer comprises a remote plasma nitridation.
Claim 6
Dependent Claim
25 words
The method of claim 2 , wherein the step of nitridizing the polysilicon layer forms a nitride layer of about 15 to about 25 angstroms.
Claim 7
Dependent Claim
24 words
The method of claim 2 , wherein the container is circular, square, rectangular, trapezoidal, triangular, oval, or rhomboidal shaped, in a top down view.
Claim 8
Dependent Claim
32 words
The method of claim 2 , wherein the step of forming the polysilicon layer comprises depositing a silicon material selected from the group consisting of dichlorosilane, silicon tetrachloride, trichlorosilane, silane, and disilane.
Claim 9
Dependent Claim
22 words
The method of claim 2 , wherein the step of forming the polysilicon layer comprises depositing a plasma enhanced silicon source gas.
Claim 10
Dependent Claim
30 words
The method of claim 2 , wherein the silicon source gas is deposited by low pressure chemical vapor deposition at a temperature of about 450° C. to about 650° C.
Claim 11
Independent Claim
105 words
A method of forming a container electrode, comprising the steps of: forming a layer of doped polysilicon over an insulative layer disposed on a substrate and within a plurality of containers formed in the insulative layer; depositing a barrier layer over the polysilicon layer; removing the barrier layer and the polysilicon layer overlying the insulative layer outside the containers; removing the insulative layer to expose the polysilicon layer outside the containers; nitridizing the polysilicon layer outside the containers at a temperature of about 550° C. or less; removing the barrier layer within the containers; and forming HSG polysilicon over the polysilicon layer within the containers.
Claim 12
Independent Claim
105 words
A method of forming a container electrode, comprising the steps of: forming a layer of doped polysilicon over an insulative layer disposed on a substrate and within a plurality of containers formed in the insulative layer; depositing a barrier layer over the polysilicon layer; removing the barrier layer and the polysilicon layer overlying the insulative layer outside the containers; removing the insulative layer to expose the polysilicon layer outside the containers; nitridizing the polysilicon layer outside the containers at a temperature of about 550° C. or less; removing the barrier layer within the containers; and forming HSG polysilicon over the polysilicon layer within the containers.
Claim 13
Independent Claim
128 words
A method of forming a container electrode, comprising the steps of: forming a conformal layer of doped polysilicon over an insulative layer disposed on a substrate and within a plurality of containers formed in the insulative layer; depositing a conformal layer of a barrier material over the polysilicon layer; removing the barrier layer and the polysilicon layer overlying the insulative layer outside the containers; removing the insulative layer to expose the polysilicon layer outside the containers; nitridizing the polysilicon layer outside the containers using a plasma source of nitrogen at a temperature of about 550° C. or less to form a nitride layer; removing the barrier layer within the containers; cleaning the polysilicon layer within the containers; and forming HSG polysilicon over the polysilicon layer within the containers.
Claim 14
Independent Claim
128 words
A method of forming a container electrode, comprising the steps of: forming a conformal layer of doped polysilicon over an insulative layer disposed on a substrate and within a plurality of containers formed in the insulative layer; depositing a conformal layer of a barrier material over the polysilicon layer; removing the barrier layer and the polysilicon layer overlying the insulative layer outside the containers; removing the insulative layer to expose the polysilicon layer outside the containers; nitridizing the polysilicon layer outside the containers using a plasma source of nitrogen at a temperature of about 550° C. or less to form a nitride layer; removing the barrier layer within the containers; cleaning the polysilicon layer within the containers; and forming HSG polysilicon over the polysilicon layer within the containers.
Claim 15
Dependent Claim
27 words
The method of claim 10 , wherein the step of cleaning the polysilicon layer comprises exposing the polysilicon layer to an etchant selective to the nitride layer.
Claim 16
Dependent Claim
23 words
The method of claim 11 , wherein the etchant has an etch rate of the nitride layer of about 2 angstroms per minute.
Claim 17
Dependent Claim
25 words
The method of claim 12 , wherein the etchant has an etch rate of native oxide of about 40 to about 60 angstroms per minute.
Claim 18
Dependent Claim
35 words
The method of claim 10 , wherein the step of cleaning the polysilicon comprises exposing the polysilicon layer to a wet etch comprising a mixture of NH 4 F and H 3 PO 4 .
Claim 19
Dependent Claim
24 words
The method of claim 10 , wherein the step of cleaning the polysilicon maintains a thickness of the nitride layer over the polysilicon layer.
Claim 20
Independent Claim
141 words
A method of forming a container electrode, comprising the steps of: providing a substrate comprising an insulative layer having a plurality of containers therein; forming a layer of doped polysilicon over the upper surface of the insulative layer and within the containers; forming a barrier layer over the polysilicon layer; removing the polysilicon layer and the barrier layer from over the insulative layer outside the containers; removing the insulative layer to expose the polysilicon layer outside the containers; nitridizing the polysilicon layer outside the containers at a temperature of about 550° C. or less; removing the barrier layer to expose the polysilicon layer within the containers; and exposing the polysilicon layer within the containers to an etchant selective to the nitride layer to remove native oxide from the polysilicon layer; and forming HSG polysilicon over the polysilicon layer within the containers.
Claim 21
Independent Claim
141 words
A method of forming a container electrode, comprising the steps of: providing a substrate comprising an insulative layer having a plurality of containers therein; forming a layer of doped polysilicon over the upper surface of the insulative layer and within the containers; forming a barrier layer over the polysilicon layer; removing the polysilicon layer and the barrier layer from over the insulative layer outside the containers; removing the insulative layer to expose the polysilicon layer outside the containers; nitridizing the polysilicon layer outside the containers at a temperature of about 550° C. or less; removing the barrier layer to expose the polysilicon layer within the containers; and exposing the polysilicon layer within the containers to an etchant selective to the nitride layer to remove native oxide from the polysilicon layer; and forming HSG polysilicon over the polysilicon layer within the containers.
Claim 22
Dependent Claim
23 words
The method of claim 16 , wherein the etchant has an etch rate of the nitride layer of about 2 angstroms per minute.
Claim 23
Dependent Claim
25 words
The method of claim 16 , wherein the etchant has an etch rate of native oxide of about 40 to about 60 angstroms per minute.
Claim 24
Dependent Claim
48 words
The method of claim 16 , wherein the substrate further comprises a wet etch stop layer disposed between a first insulative layer and a second insulative layer; and the step of removing the insulative layer comprises etching the first insulative layer to expose the wet etch stop layer.
Claim 25
Dependent Claim
15 words
The method of claim 19 , wherein the wet etch stop layer comprises silicon nitride.
Claim 26
Dependent Claim
22 words
The method of claim 19 , wherein the wet etch stop layer comprises silicon oxide formed by decomposition of a TEOS precursor.
Claim 27
Dependent Claim
22 words
The method of claim 19 , wherein the wet etch stop layer comprises about 100 to about 200 angstroms of silicon nitride.
Claim 28
Dependent Claim
29 words
The method of claim 19 , wherein the wet etch top layer comprises about 500 to about 1,000 angstroms of silicon dioxide formed by decomposition of a TEOS precursor.
Claim 29
Independent Claim
134 words
A method of forming a container electrode, comprising the steps of: providing a substrate comprising a first insulative layer, an overlying etch stop layer, an overlying second insulative layer, and a container extending through the insulative layers and the etch stop layer to the substrate; forming a layer of doped polysilicon over the second insulative layer and within the container; forming a barrier layer over the polysilicon layer; removing the barrier layer and the polysilicon layer outside the container; etching the second insulative layer to expose the etch stop layer and a portion of the polysilicon layer outside the container; nitridizing the exposed portion of the polysilicon layer outside the container to form a nitride layer; removing the barrier layer within the container; and forming HSG polysilicon over the polysilicon layer within the container.
Claim 30
Independent Claim
134 words
A method of forming a container electrode, comprising the steps of: providing a substrate comprising a first insulative layer, an overlying etch stop layer, an overlying second insulative layer, and a container extending through the insulative layers and the etch stop layer to the substrate; forming a layer of doped polysilicon over the second insulative layer and within the container; forming a barrier layer over the polysilicon layer; removing the barrier layer and the polysilicon layer outside the container; etching the second insulative layer to expose the etch stop layer and a portion of the polysilicon layer outside the container; nitridizing the exposed portion of the polysilicon layer outside the container to form a nitride layer; removing the barrier layer within the container; and forming HSG polysilicon over the polysilicon layer within the container.
Claim 31
Dependent Claim
14 words
The method of claim 24 , wherein the etch stop layer comprises silicon nitride.
Claim 32
Dependent Claim
18 words
The method of claim 24 , wherein the etch stop layer is about 100 to about 200 angstroms.
Claim 33
Dependent Claim
28 words
The method of claim 24 , wherein the step of nitridizing the polysilicon layer is by remote plasma nitridation at a temperature of about 550° C. or less.
Claim 34
Dependent Claim
28 words
The method of claim 24 , wherein the step of nitridizing the polysilicon layer is by decoupled plasma nitridation at a temperature of about 550° C. or less.
Claim 35
Dependent Claim
44 words
The method of claim 24 , further comprising, after the step of forming the HSG polysilicon, the steps of: depositing a layer of cell nitride over the polysilicon layer inside and outside the container; and forming an upper electrode over the cell nitride layer.
Claim 36
Dependent Claim
30 words
The method of claim 24 , further comprising, prior to the step of forming the HSG polysilicon, the step of removing native oxide from the polysilicon layer within the container.
Claim 37
Dependent Claim
34 words
The method of claim 30 , wherein the step of removing native oxide comprises exposing the polysilicon layer to an etchant comprising a mixture of NH 4 F and H 3 PO 4 .
Claim 38
Dependent Claim
36 words
The method of claim 31 , wherein the etchant has an etch rate of the nitride layer of about 2 angstroms per minute, and the polysilicon layer is exposed to the etchant for about two minutes.
Claim 39
Independent Claim
173 words
A method of forming a container electrode, comprising the steps of: providing a substrate comprising a wet etch stop layer interposed between first and second insulative layers, and a container disposed through the insulative layers and the wet etch stop layer; forming a layer of doped polysilicon over the second insulative layer and within the container; the polysilicon layer being cup-shaped and defining an interior surface and an exterior surface; forming a barrier layer over the polysilicon layer; removing the barrier layer and the polysilicon layer outside the container; wet etching the second insulative layer to expose the wet etch top layer and the exterior surface of the polysilicon layer; nitridizing the exterior surface of the polysilicon layer to form a nitride passivating layer; removing the barrier layer to expose the interior surface of the polysilicon layer; wet etching the polysilicon layer to remove oxide and TiSi x while maintaining a thickness of the nitride passivating layer over the polysilicon layer; and forming HSG polysilicon over the interior surface of the polysilicon layer.
Claim 40
Independent Claim
173 words
A method of forming a container electrode, comprising the steps of: providing a substrate comprising a wet etch stop layer interposed between first and second insulative layers, and a container disposed through the insulative layers and the wet etch stop layer; forming a layer of doped polysilicon over the second insulative layer and within the container; the polysilicon layer being cup-shaped and defining an interior surface and an exterior surface; forming a barrier layer over the polysilicon layer; removing the barrier layer and the polysilicon layer outside the container; wet etching the second insulative layer to expose the wet etch top layer and the exterior surface of the polysilicon layer; nitridizing the exterior surface of the polysilicon layer to form a nitride passivating layer; removing the barrier layer to expose the interior surface of the polysilicon layer; wet etching the polysilicon layer to remove oxide and TiSi x while maintaining a thickness of the nitride passivating layer over the polysilicon layer; and forming HSG polysilicon over the interior surface of the polysilicon layer.
Claim 41
Dependent Claim
15 words
The method of claim 33 , wherein the wet etch stop layer comprises silicon nitride.
Claim 42
Dependent Claim
22 words
The method of claim 33 , wherein the wet etch stop layer comprises silicon dioxide formed by decomposition of a TEOS precursor.
Claim 43
Dependent Claim
13 words
The method of claim 33 , wherein the barrier layer comprises titanium nitride.
Claim 44
Dependent Claim
30 words
The method of claim 33 , wherein the step of removing the barrier layer and the polysilicon layer is by chemical mechanical polishing, by dry etch, or a combination thereof.
Claim 45
Dependent Claim
22 words
The method of claim 33 , wherein the step of wet etching the second insulative layer uses a solution comprising hydrofluoric acid.
Claim 46
Dependent Claim
19 words
The method of claim 33 , wherein the step of nitridizing the polysilicon layer is by remote plasma nitridization.
Claim 47
Dependent Claim
19 words
The method of claim 33 , wherein the step of nitridizing the polysilicon layer is by decoupled plasma nitridization.
Claim 48
Dependent Claim
18 words
The method of claim 35 , wherein the titanium nitride layer is removed by a piranha wet etch.
Claim 49
Dependent Claim
32 words
The method of claim 33 , wherein the step of wet etching the polysilicon layer comprises using an etchant comprising a mixture of NH 4 F and H 3 PO 4 .
Claim 50
Dependent Claim
48 words
The method of claim 42 , wherein the etchant provides an etch rate of native oxide of about 48 angstroms per minute, an etch rate of TiSi x of about 50 angstroms per minute, and an etch rate of the nitride layer of about 2 angstroms per minute.
Claim 51
Dependent Claim
17 words
The method of claim 42 , wherein the etchant is applied for up to about 2 minutes.
Claim 52
Dependent Claim
34 words
The method of claim 33 , further comprising, after the step of forming the HSG polysilicon, the step of wet etching the nitride passivating layer to expose the exterior surface of the polysilicon layer.
Claim 53
Dependent Claim
39 words
The method of claim 45 , further comprising, after the step of wet etching the nitride passivating layer, the step of depositing a cell nitride layer over the HSG polysilicon layer and the exterior surface of the polysilicon layer.
Claim 54
Dependent Claim
29 words
The method of claim 46 , further comprising, after the step of depositing the cell nitride layer, the step of depositing a conductive material over the cell nitride layer.
Claim 55
Independent Claim
105 words
A method of forming a container electrode, comprising the steps of: forming a layer of doped polysilicon within openings formed in an insulative layer disposed on a substrate; the polysilicon layer being cup-shaped and defining an interior surface and an exterior surface; forming a titanium nitride barrier layer over the interior surface of the polysilicon layer; removing the insulative layer to expose the exterior surface of the polysilicon layer; nitridizing the exposed exterior surface of the polysilicon layer; removing the titanium nitride barrier layer to expose the interior surface of the polysilicon layer; and forming HSG polysilicon over the interior surface of the polysilicon layer.
Claim 56
Independent Claim
105 words
A method of forming a container electrode, comprising the steps of: forming a layer of doped polysilicon within openings formed in an insulative layer disposed on a substrate; the polysilicon layer being cup-shaped and defining an interior surface and an exterior surface; forming a titanium nitride barrier layer over the interior surface of the polysilicon layer; removing the insulative layer to expose the exterior surface of the polysilicon layer; nitridizing the exposed exterior surface of the polysilicon layer; removing the titanium nitride barrier layer to expose the interior surface of the polysilicon layer; and forming HSG polysilicon over the interior surface of the polysilicon layer.
Claim 57
Independent Claim
144 words
A method of forming a container electrode, comprising the steps of: forming a layer of about 300 to about 400 angstroms doped polysilicon over an insulative layer disposed on a substrate and within an opening formed in the insulative layer; forming a barrier layer comprising about 100 to about 200 angstroms titanium nitride over the polysilicon layer within the opening; removing the barrier layer and the polysilicon layer overlying the insulative layer and outside the opening; removing the insulative layer to expose the polysilicon layer outside the opening; nitridizing the polysilicon layer outside the opening by a remote plasma nitridation at a temperature of about 550° C. or less to form a nitride layer of about 15 to about 20 angstroms; removing the barrier layer within the opening to expose the polysilicon layer; and forming HSG polysilicon over the polysilicon layer within the opening.
Claim 58
Independent Claim
144 words
A method of forming a container electrode, comprising the steps of: forming a layer of about 300 to about 400 angstroms doped polysilicon over an insulative layer disposed on a substrate and within an opening formed in the insulative layer; forming a barrier layer comprising about 100 to about 200 angstroms titanium nitride over the polysilicon layer within the opening; removing the barrier layer and the polysilicon layer overlying the insulative layer and outside the opening; removing the insulative layer to expose the polysilicon layer outside the opening; nitridizing the polysilicon layer outside the opening by a remote plasma nitridation at a temperature of about 550° C. or less to form a nitride layer of about 15 to about 20 angstroms; removing the barrier layer within the opening to expose the polysilicon layer; and forming HSG polysilicon over the polysilicon layer within the opening.
Claim 59
Dependent Claim
25 words
The method of claim 49 , wherein the step of nitridizing the polysilicon layer is by a remote plasma nitridation or a decoupled plasma nitridation.
Claim 60
Independent Claim
120 words
A method of forming a double-sided container capacitor, comprising the steps of: forming a layer of doped polysilicon over an insulative layer disposed on a substrate and within a container formed in the insulative layer; forming a barrier layer over the polysilicon layer; removing the barrier layer and the polysilicon layer overlying the insulative layer and outside the container; removing the insulative layer to expose the polysilicon layer outside the container; nitridizing the polysilicon layer outside the container; removing the barrier layer within the containers; forming HSG polysilicon over the polysilicon layer within the container; depositing a layer of cell nitride over the polysilicon layer inside and outside the container; and forming an upper electrode over the cell nitride layer.
Claim 61
Independent Claim
120 words
A method of forming a double-sided container capacitor, comprising the steps of: forming a layer of doped polysilicon over an insulative layer disposed on a substrate and within a container formed in the insulative layer; forming a barrier layer over the polysilicon layer; removing the barrier layer and the polysilicon layer overlying the insulative layer and outside the container; removing the insulative layer to expose the polysilicon layer outside the container; nitridizing the polysilicon layer outside the container; removing the barrier layer within the containers; forming HSG polysilicon over the polysilicon layer within the container; depositing a layer of cell nitride over the polysilicon layer inside and outside the container; and forming an upper electrode over the cell nitride layer.
Claim 62
Independent Claim
168 words
A method of forming a double-sided container capacitor, comprising the steps of: forming a layer of doped polysilicon over an insulative layer disposed on a substrate and within a plurality of containers formed in the insulative layer; the polysilicon layer within the containers being cup-shaped and defining an interior surface and an exterior surface; depositing a barrier layer over the polysilicon layer; removing the barrier layer and the polysilicon layer overlying the insulative layer outside the containers; removing the insulative layer to expose the exterior surface of the polysilicon layer outside the containers; nitridizing the exposed exterior surface of the polysilicon layer outside the containers at a temperature of about 550° C. or less; removing the barrier layer to expose the interior surface of the polysilicon layer inside the containers; forming HSG polysilicon over interior surface of the polysilicon layer within the containers; depositing a layer of cell nitride over the polysilicon layer inside and outside the containers; and forming an upper electrode over the cell nitride layer.
Claim 63
Independent Claim
168 words
A method of forming a double-sided container capacitor, comprising the steps of: forming a layer of doped polysilicon over an insulative layer disposed on a substrate and within a plurality of containers formed in the insulative layer; the polysilicon layer within the containers being cup-shaped and defining an interior surface and an exterior surface; depositing a barrier layer over the polysilicon layer; removing the barrier layer and the polysilicon layer overlying the insulative layer outside the containers; removing the insulative layer to expose the exterior surface of the polysilicon layer outside the containers; nitridizing the exposed exterior surface of the polysilicon layer outside the containers at a temperature of about 550° C. or less; removing the barrier layer to expose the interior surface of the polysilicon layer inside the containers; forming HSG polysilicon over interior surface of the polysilicon layer within the containers; depositing a layer of cell nitride over the polysilicon layer inside and outside the containers; and forming an upper electrode over the cell nitride layer.
Claim 64
Dependent Claim
30 words
The method of claim 52 , wherein the step of removing the barrier layer to expose the interior surface of the polysilicon layer inside the containers comprises a wet etch.
Claim 65
Dependent Claim
32 words
The method of claim 1 , further comprising, providing the substrate with the insulative layer disposed thereon, and one or more openings formed in the insulative layer and extending to the substrate.
Claim 66
Dependent Claim
47 words
The method of claim 54 , wherein the insulative layer comprises a first insulative layer, an overlying etch stop layer, an overlying second insulative layer, and the one or more openings extend through the first and second insulative layers and the etch stop layer to the substrate.
Claim 67
Dependent Claim
36 words
The method of claim 55 , wherein the step of removing the insulative layer comprises etching the second insulative layer to expose the etch stop layer and the polysilicon layer outside the one or more openings.
Claim 68
Dependent Claim
13 words
The method of claim 1 , wherein the barrier layer comprises titanium nitride.
Claim 69
Dependent Claim
36 words
The method of claim 1 , further comprising, prior to the step of removing the insulative layer, the step of removing the barrier layer and the polysilicon layer overlying the insulative layer and outside the opening.
Claim 70
Dependent Claim
28 words
The method of claim 58 , wherein the step of removing the barrier layer and the polysilicon layer comprise chemical mechanical polishing, dry etching, or a combination thereof.
Claim 71
Dependent Claim
26 words
The method of claim 1 , wherein the step of removing the insulative layer comprises wet etching the insulative layer with a solution comprising hydrofluoric acid.
Claim 72
Dependent Claim
64 words
The method of claim 1 , wherein the insulative layer comprises a first insulative layer and an overlying second insulative layer, and an etch stop layer disposed therebetween, and the opening extends through the insulative layers and the etch stop layer to the substrate; and the step of removing the insulative layer comprises etching the second insulative layer to expose the etch stop layer.
Claim 73
Dependent Claim
14 words
The method of claim 61 , wherein the etch stop layer comprises silicon nitride.
Claim 74
Dependent Claim
21 words
The method of claim 61 , wherein the etch stop layer comprises silicon oxide formed by decomposition of a TEOS precursor.
Claim 75
Dependent Claim
21 words
The method of claim 61 , wherein the etch stop layer comprises about 100 to about 200 angstroms of silicon nitride.
Claim 76
Dependent Claim
28 words
The method of claim 61 , wherein the etch top layer comprises about 500 to about 1,000 angstroms of silicon dioxide formed by decomposition of a TEOS precursor.
Claim 77
Dependent Claim
66 words
The method of claim 1 , further comprising providing the substrate with the insulative layer disposed thereon and one or more openings formed in the insulative layer; the insulative layer comprising a wet etch stop layer interposed between first and second insulative layers, and the one or more openings formed through the first and second insulative layers and the wet etch stop layer to the substrate.
Claim 78
Dependent Claim
36 words
The method of claim 66 , wherein the step of removing the insulating layer comprises wet etching the second insulative layer to expose the wet etch top layer and the exterior surface of the polysilicon layer.
Claim 79
Dependent Claim
26 words
The method of claim 1 , wherein the step of nitridizing comprises nitridizing the exterior surface of the polysilicon layer to form a nitride passivating layer.
Claim 80
Dependent Claim
44 words
The method of claim 68 , further comprising, prior to the step of forming the HSG polysilicon, the step of wet etching the polysilicon layer to remove oxide and TiSi x while maintaining a thickness of the nitride passivating layer over the polysilicon layer.
Claim 81
Dependent Claim
18 words
The method of claim 1 , wherein the step of nitridizing the polysilicon layer comprises remote plasma nitridation.
Claim 82
Dependent Claim
18 words
The method of claim 1 , wherein the step of nitridizing the polysilicon layer comprises decoupled plasma nitridation.
Claim 83
Dependent Claim
24 words
The method of claim 1 , wherein the step of removing the barrier layer comprises exposing the barrier layer to a piranha wet etch.
Claim 84
Dependent Claim
48 words
The method of claim 1 , wherein the step of nitridizing forms a nitride layer over the surfaces of the polysilicon layer, and the method further comprises, prior to the step of forming the HSG polysilicon, exposing the polysilicon layer to an etchant selective to the nitride layer.
Claim 85
Dependent Claim
23 words
The method of claim 73 , wherein the etchant has an etch rate of the nitride layer of about 2 angstroms per minute.
Claim 86
Dependent Claim
25 words
The method of claim 73 , wherein the etchant has an etch rate of native oxide of about 40 to about 60 angstroms per minute.
Claim 87
Dependent Claim
22 words
The method of claim 73 , wherein the etchant comprises a mixture of NH 4 F and H 3 PO 4 .
Claim 88
Dependent Claim
28 words
The method of claim 73 , wherein the step of exposing the polysilicon layer to the etchant maintains a thickness of the nitride layer over the polysilicon layer.
Claim 89
Dependent Claim
30 words
The method of claim 1 , further comprising, prior to the step of forming the HSG polysilicon, the step of removing native oxide from the polysilicon layer within the opening.
Claim 90
Dependent Claim
28 words
The method of claim 78 , wherein the step of removing the native oxide comprises exposing the polysilicon layer within the opening to an etchant selective to nitride.
Claim 91
Dependent Claim
34 words
The method of claim 79 , wherein the step of removing the native oxide comprises exposing the polysilicon layer to an etchant having an etch rate of nitride of about 2 angstroms per minute.
Claim 92
Dependent Claim
35 words
The method of claim 80 , wherein the etchant provides an etch rate of native oxide of about 48 angstroms per minute, and an etch rate of TiSi x of about 50 angstroms per minute.
Claim 93
Dependent Claim
17 words
The method of claim 80 , wherein the etchant is applied for up to about 2 minutes.
Claim 94
Dependent Claim
43 words
The method of claim 1 , further comprising, prior to the step of forming the HSG polysilicon, the step of wet etching the polysilicon layer to remove oxide and TiSi x while maintaining a thickness of a nitride layer over the polysilicon layer.
Claim 95
Dependent Claim
39 words
The method of claim 1 , further comprising, after the step of forming the HSG polysilicon, the steps of: depositing a layer of cell nitride over the polysilicon layer; and depositing a conductive material over the cell nitride layer.
Claim 96
Dependent Claim
33 words
The method of claim 1 , further comprising, after the step of forming the HSG polysilicon, the step of wet etching to remove nitride and expose the exterior surface of the polysilicon layer.
Claim 97
Dependent Claim
36 words
The method of claim 85 , further comprising, after the step of wet etching, the step of depositing a layer of cell nitride over the HSG polysilicon layer and the exterior surface of the polysilicon layer.
Claim 98
Dependent Claim
31 words
The method of claim 86 , further comprising, after the step of depositing the layer of cell nitride, the step of depositing a conductive material over the layer of cell nitride.
Claim 99
Dependent Claim
15 words
The method of claim 1 , wherein the insulative layer comprises a plurality of openings.
Claim 100
Dependent Claim
18 words
The method of claim 88 , wherein the layer of polysilicon is disposed within the plurality of openings.
Claim 101
Dependent Claim
29 words
The method of claim 1 , further comprising the step of providing the substrate with the insulative layer disposed thereon, the insulative layer having a plurality of openings therein.
Claim 102
Independent Claim
81 words
A method of forming a container electrode, comprising the steps of: forming a layer of doped polysilicon over an insulative layer disposed on a substrate and within one or more containers formed in the insulative layer; depositing a barrier layer over the polysilicon layer; removing the insulative layer to expose the polysilicon layer outside the containers; nitridizing the polysilicon layer outside the containers; removing the barrier layer within the containers; and forming HSG polysilicon over the polysilicon layer within the containers.
Claim 103
Independent Claim
81 words
A method of forming a container electrode, comprising the steps of: forming a layer of doped polysilicon over an insulative layer disposed on a substrate and within one or more containers formed in the insulative layer; depositing a barrier layer over the polysilicon layer; removing the insulative layer to expose the polysilicon layer outside the containers; nitridizing the polysilicon layer outside the containers; removing the barrier layer within the containers; and forming HSG polysilicon over the polysilicon layer within the containers.
Claim 104
Dependent Claim
35 words
The method of claim 91 , further comprising, prior to the step of removing the insulative layer, the step of removing the barrier layer and the polysilicon layer overlying the insulative layer outside the containers.
Claim 105
Independent Claim
99 words
A method of forming a container electrode, comprising the steps of: forming a conformal layer of doped polysilicon over an insulative layer disposed on a substrate and within one or more openings formed in the insulative layer; depositing a conformal layer of a barrier material over the polysilicon layer; removing the insulative layer to expose the polysilicon layer outside the one or more openings; nitridizing the polysilicon layer outside the one or more openings to form a nitride layer; removing the barrier layer within the containers; forming HSG polysilicon over the polysilicon layer within the one or more openings.
Claim 106
Independent Claim
99 words
A method of forming a container electrode, comprising the steps of: forming a conformal layer of doped polysilicon over an insulative layer disposed on a substrate and within one or more openings formed in the insulative layer; depositing a conformal layer of a barrier material over the polysilicon layer; removing the insulative layer to expose the polysilicon layer outside the one or more openings; nitridizing the polysilicon layer outside the one or more openings to form a nitride layer; removing the barrier layer within the containers; forming HSG polysilicon over the polysilicon layer within the one or more openings.
Claim 107
Dependent Claim
38 words
The method of claim 93 , further comprising, prior to the step of removing the insulative layer, the step of removing the barrier layer and the polysilicon layer overlying the insulative layer outside the one or more openings.
Claim 108
Dependent Claim
38 words
The method of claim 93 , further comprising, prior to the step of forming the HSG polysilicon, the step of exposing the polysilicon layer within the one or more openings to an etchant selective to the nitride layer.
Claim 109
Independent Claim
113 words
A method of forming a container electrode, comprising the steps of: forming a layer of doped polysilicon within one or more openings formed in an insulative layer disposed on a substrate; the polysilicon layer within the one or more openings comprising an interior surface defining an opening and an exterior surface; forming a barrier layer over the interior surface of the polysilicon layer within the opening; removing the insulative layer to expose the exterior surface of the polysilicon layer; nitridizing the exposed exterior surface of the polysilicon layer; removing the barrier layer to expose the interior surface of the polysilicon layer; and forming HSG polysilicon over the interior surface of the polysilicon layer.
Claim 110
Independent Claim
113 words
A method of forming a container electrode, comprising the steps of: forming a layer of doped polysilicon within one or more openings formed in an insulative layer disposed on a substrate; the polysilicon layer within the one or more openings comprising an interior surface defining an opening and an exterior surface; forming a barrier layer over the interior surface of the polysilicon layer within the opening; removing the insulative layer to expose the exterior surface of the polysilicon layer; nitridizing the exposed exterior surface of the polysilicon layer; removing the barrier layer to expose the interior surface of the polysilicon layer; and forming HSG polysilicon over the interior surface of the polysilicon layer.
Claim 111
Independent Claim
92 words
A method of forming a container electrode, comprising the steps of: providing a substrate comprising an insulative layer having one or more containers therein; forming a layer of doped polysilicon over the upper surface of the insulative layer and within the containers; forming a barrier layer over the polysilicon layer; removing the insulative layer to expose the polysilicon layer outside the containers; nitridizing the polysilicon layer outside the containers; removing the barrier layer to expose the polysilicon layer within the containers; and forming HSG polysilicon over the polysilicon layer within the containers.
Claim 112
Independent Claim
92 words
A method of forming a container electrode, comprising the steps of: providing a substrate comprising an insulative layer having one or more containers therein; forming a layer of doped polysilicon over the upper surface of the insulative layer and within the containers; forming a barrier layer over the polysilicon layer; removing the insulative layer to expose the polysilicon layer outside the containers; nitridizing the polysilicon layer outside the containers; removing the barrier layer to expose the polysilicon layer within the containers; and forming HSG polysilicon over the polysilicon layer within the containers.
Claim 113
Dependent Claim
36 words
The method of claim 97 , further comprising, prior to the step of removing the insulative layer, the step of removing the polysilicon layer and the barrier layer from over the insulative layer outside the containers.
Claim 114
Dependent Claim
43 words
The method of claim 97 , further comprising, prior to the step of forming the HSG polysilicon, the step of exposing the polysilicon layer within the containers to an etchant selective to the nitride layer to remove native oxide from the polysilicon layer.
Claim 115
Independent Claim
125 words
A method of forming a container electrode, comprising the steps of: providing a substrate comprising a first insulative layer, an overlying etch stop layer, an overlying second insulative layer, and one or more containers extending through the insulative layers and the etch stop layer; forming a layer of doped polysilicon over the second insulative layer and within the one or more containers; forming a barrier layer over the polysilicon layer; etching the second insulative layer to expose the etch stop layer and a portion of the polysilicon layer outside the container; nitridizing the exposed portion of the polysilicon layer outside the container to form a nitride layer; removing the barrier layer within the container; and forming HSG polysilicon over the polysilicon layer within the container.
Claim 116
Independent Claim
125 words
A method of forming a container electrode, comprising the steps of: providing a substrate comprising a first insulative layer, an overlying etch stop layer, an overlying second insulative layer, and one or more containers extending through the insulative layers and the etch stop layer; forming a layer of doped polysilicon over the second insulative layer and within the one or more containers; forming a barrier layer over the polysilicon layer; etching the second insulative layer to expose the etch stop layer and a portion of the polysilicon layer outside the container; nitridizing the exposed portion of the polysilicon layer outside the container to form a nitride layer; removing the barrier layer within the container; and forming HSG polysilicon over the polysilicon layer within the container.
Claim 117
Dependent Claim
35 words
The method of claim 100 , further comprising, prior to the step of etching the insulative layer, the step of removing the barrier layer and the polysilicon layer overlying the insulative layer outside the container.
Claim 118
Independent Claim
135 words
A method of forming a container electrode, comprising the steps of: providing a substrate comprising a wet etch stop layer interposed between first and second insulative layers, and a container disposed through the insulative layers and the wet etch stop layer; forming a layer of doped polysilicon over the second insulative layer and within the container; the polysilicon layer defining an interior surface and an exterior surface; forming a barrier layer over the polysilicon layer; wet etching the second insulative layer to expose the wet etch top layer and the exterior surface of the polysilicon layer; nitridizing the exterior surface of the polysilicon layer to form a nitride passivating layer; removing the barrier layer to expose the interior surface of the polysilicon layer; and forming HSG polysilicon over the interior surface of the polysilicon layer.
Claim 119
Independent Claim
135 words
A method of forming a container electrode, comprising the steps of: providing a substrate comprising a wet etch stop layer interposed between first and second insulative layers, and a container disposed through the insulative layers and the wet etch stop layer; forming a layer of doped polysilicon over the second insulative layer and within the container; the polysilicon layer defining an interior surface and an exterior surface; forming a barrier layer over the polysilicon layer; wet etching the second insulative layer to expose the wet etch top layer and the exterior surface of the polysilicon layer; nitridizing the exterior surface of the polysilicon layer to form a nitride passivating layer; removing the barrier layer to expose the interior surface of the polysilicon layer; and forming HSG polysilicon over the interior surface of the polysilicon layer.
Claim 120
Dependent Claim
12 words
The method of claim 102 , wherein the polysilicon layer is cup-shaped.
Claim 121
Dependent Claim
39 words
The method of claim 102 , further comprising, prior to the step of wet etching the second insulative layer, the step of removing the barrier layer and the polysilicon layer overlying the second insulative layer and outside the container.
Claim 122
Dependent Claim
44 words
The method of claim 102 , further comprising, prior to the step of forming the HSG polysilicon, the step of wet etching the polysilicon layer to remove oxide and TiSi x while maintaining a thickness of the nitride passivating layer over the polysilicon layer.
Claim 123
Independent Claim
98 words
A method of forming a container electrode, comprising the steps of: forming a layer of doped polysilicon within openings formed in an insulative layer disposed on a substrate; the polysilicon layer defining an interior surface and an exterior surface; forming a barrier layer over the interior surface of the polysilicon layer; removing the insulative layer to expose the exterior surface of the polysilicon layer; nitridizing the exposed exterior surface of the polysilicon layer; removing the barrier layer to expose the interior surface of the polysilicon layer; and forming HSG polysilicon over the interior surface of the polysilicon layer.
Claim 124
Independent Claim
98 words
A method of forming a container electrode, comprising the steps of: forming a layer of doped polysilicon within openings formed in an insulative layer disposed on a substrate; the polysilicon layer defining an interior surface and an exterior surface; forming a barrier layer over the interior surface of the polysilicon layer; removing the insulative layer to expose the exterior surface of the polysilicon layer; nitridizing the exposed exterior surface of the polysilicon layer; removing the barrier layer to expose the interior surface of the polysilicon layer; and forming HSG polysilicon over the interior surface of the polysilicon layer.
Claim 125
Dependent Claim
12 words
The method of claim 106 , wherein the polysilicon layer is cup-shaped.
Claim 126
Dependent Claim
13 words
The method of claim 106 , wherein the barrier layer comprises titanium nitride.
Claim 127
Independent Claim
112 words
A method of forming a container electrode, comprising the steps of: forming a layer of about 300 to about 400 angstroms doped polysilicon over an insulative layer disposed on a substrate and within an opening formed in the insulative layer; forming a barrier layer of about 100 to about 200 angstroms over the polysilicon layer within the opening; removing the insulative layer to expose the polysilicon layer outside the opening; nitridizing the polysilicon layer outside the opening to form a nitride layer of about 15 to about 20 angstroms; removing the barrier layer within the opening to expose the polysilicon layer; and forming HSG polysilicon over the polysilicon layer within the opening.
Claim 128
Independent Claim
112 words
A method of forming a container electrode, comprising the steps of: forming a layer of about 300 to about 400 angstroms doped polysilicon over an insulative layer disposed on a substrate and within an opening formed in the insulative layer; forming a barrier layer of about 100 to about 200 angstroms over the polysilicon layer within the opening; removing the insulative layer to expose the polysilicon layer outside the opening; nitridizing the polysilicon layer outside the opening to form a nitride layer of about 15 to about 20 angstroms; removing the barrier layer within the opening to expose the polysilicon layer; and forming HSG polysilicon over the polysilicon layer within the opening.
Claim 129
Dependent Claim
36 words
The method of claim 109 , further comprising, prior to the step of removing the insulative layer, the step of removing the barrier layer and the polysilicon layer overlying the insulative layer and outside the container.
Claim 130
Independent Claim
78 words
A method of forming a double-sided container capacitor, comprising the steps of: forming a layer of doped polysilicon over an insulative layer disposed on a substrate and within a container formed in the insulative layer; forming a barrier layer over the polysilicon; removing the insulative layer to expose the polysilicon layer outside the container; nitridizing the polysilicon layer outside the container; removing the barrier layer within the containers; forming HSG polysilicon over the polysilicon layer within the container.
Claim 131
Independent Claim
78 words
A method of forming a double-sided container capacitor, comprising the steps of: forming a layer of doped polysilicon over an insulative layer disposed on a substrate and within a container formed in the insulative layer; forming a barrier layer over the polysilicon; removing the insulative layer to expose the polysilicon layer outside the container; nitridizing the polysilicon layer outside the container; removing the barrier layer within the containers; forming HSG polysilicon over the polysilicon layer within the container.
Claim 132
Dependent Claim
36 words
The method of claim 111 , further comprising, prior to the step of removing the insulative layer, the step of removing the barrier layer and the polysilicon layer overlying the insulative layer and outside the container.
Claim 133
Dependent Claim
44 words
The method of claim 111 , further comprising, after the step of forming the HSG polysilicon, the steps of depositing a layer of cell nitride over the polysilicon layer inside and outside the container; and forming an upper electrode over the cell nitride layer.
Claim 134
Independent Claim
116 words
A method of forming a double-sided container capacitor, comprising the steps of: forming a layer of doped polysilicon over an insulative layer disposed on a substrate and within one or more containers formed in the insulative layer; the polysilicon layer within the containers defining an interior surface and an exterior surface; depositing a barrier layer over the polysilicon layer; removing the insulative layer to expose the exterior surface of the polysilicon layer outside the containers; nitridizing the exposed exterior surface of the polysilicon layer outside the containers; removing the barrier layer to expose the interior surface of the polysilicon layer inside the containers; forming HSG polysilicon over interior surface of the polysilicon layer within the container.
Claim 135
Independent Claim
116 words
A method of forming a double-sided container capacitor, comprising the steps of: forming a layer of doped polysilicon over an insulative layer disposed on a substrate and within one or more containers formed in the insulative layer; the polysilicon layer within the containers defining an interior surface and an exterior surface; depositing a barrier layer over the polysilicon layer; removing the insulative layer to expose the exterior surface of the polysilicon layer outside the containers; nitridizing the exposed exterior surface of the polysilicon layer outside the containers; removing the barrier layer to expose the interior surface of the polysilicon layer inside the containers; forming HSG polysilicon over interior surface of the polysilicon layer within the container.
Claim 136
Dependent Claim
12 words
The method of claim 114 , wherein the polysilicon layer is cup-shaped.
Claim 137
Dependent Claim
35 words
The method of claim 114 , further comprising, prior to the step of removing the insulative layer, the step of removing the barrier layer and the polysilicon layer overlying the insulative layer outside the containers.
Claim 138
Dependent Claim
44 words
The method of claim 114 , further comprising, after the step of forming the HSG polysilicon, the steps of depositing a layer of cell nitride over the polysilicon layer inside and outside the containers; and forming an upper electrode over the cell nitride layer.
Claim 139
Independent Claim
85 words
A method of forming a container electrode, comprising the steps of: forming a layer of doped polysilicon within an opening disposed in an insulative layer; forming a barrier layer over the polysilicon layer; removing the insulative layer to expose a surface of the polysilicon layer outside the opening; nitridizing the exposed surface of the polysilicon layer; removing the barrier layer to expose a surface of the polysilicon layer within the opening; and forming HSG polysilicon over the surface of the polysilicon layer within the opening.
Claim 140
Independent Claim
85 words
A method of forming a container electrode, comprising the steps of: forming a layer of doped polysilicon within an opening disposed in an insulative layer; forming a barrier layer over the polysilicon layer; removing the insulative layer to expose a surface of the polysilicon layer outside the opening; nitridizing the exposed surface of the polysilicon layer; removing the barrier layer to expose a surface of the polysilicon layer within the opening; and forming HSG polysilicon over the surface of the polysilicon layer within the opening.
Claim 141
Independent Claim
85 words
A method of forming a container electrode, comprising the steps of: forming a layer of doped polysilicon within a container disposed in an insulative layer; forming a barrier layer over the polysilicon layer; removing the insulative layer to expose a surface of the polysilicon layer outside the container; nitridizing the exposed surface of the polysilicon layer; removing the barrier layer to expose a surface of the polysilicon layer within the container; and forming HSG polysilicon over the surface of the polysilicon layer within the container.
Claim 142
Independent Claim
85 words
A method of forming a container electrode, comprising the steps of: forming a layer of doped polysilicon within a container disposed in an insulative layer; forming a barrier layer over the polysilicon layer; removing the insulative layer to expose a surface of the polysilicon layer outside the container; nitridizing the exposed surface of the polysilicon layer; removing the barrier layer to expose a surface of the polysilicon layer within the container; and forming HSG polysilicon over the surface of the polysilicon layer within the container.
Claim 143
Independent Claim
123 words
A method of forming a container electrode, comprising the steps of: forming a layer of doped polysilicon within an opening disposed in an insulative layer; the insulative layer disposed on a substrate and comprising a first insulative layer and an overlying second insulative layer, and an etch stop layer disposed therebetween, the opening extending through the insulative layers and the etch stop layer; forming a barrier layer over the polysilicon layer; removing the insulative layer to expose a surface of the polysilicon layer outside the opening; nitridizing the exposed surface of the polysilicon layer; removing the barrier layer to expose a surface of the polysilicon layer within the opening; and forming HSG polysilicon over the surface of the polysilicon layer within the opening.
Claim 144
Independent Claim
123 words
A method of forming a container electrode, comprising the steps of: forming a layer of doped polysilicon within an opening disposed in an insulative layer; the insulative layer disposed on a substrate and comprising a first insulative layer and an overlying second insulative layer, and an etch stop layer disposed therebetween, the opening extending through the insulative layers and the etch stop layer; forming a barrier layer over the polysilicon layer; removing the insulative layer to expose a surface of the polysilicon layer outside the opening; nitridizing the exposed surface of the polysilicon layer; removing the barrier layer to expose a surface of the polysilicon layer within the opening; and forming HSG polysilicon over the surface of the polysilicon layer within the opening.
Claim 145
Dependent Claim
26 words
The method of claim 120 , wherein the step of removing the insulative layer comprises etching the second insulative layer to expose the etch stop layer.
References Cited (Backward Citations)
US5102832A
Cited
US5112773A
Cited
US5202278A
Cited
US5320880A
Cited
US5587103A
Cited
US5869391A
Cited
US6046093A
Cited
US6255159B1
Cited
US6048763A
Cited
US6159818A
Cited
US6451662B1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-11-24 | 2007-05-26 | 2007-11-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-11-24 | 2011-05-26 | 2011-11-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-11-24 | 2015-05-26 | 2015-11-25 | $7700.00 | Window Closed / Lapsed |