US5102832A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Methods for texturizing polysilicon
Assignee: Micron Technology Inc
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Filing: 1991-02-11
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Granted: 1992-04-07
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Expires: 2011-02-11
Abstract
Abstract A process for texturization of polycrystalline silicon comprising the steps of preparing the wafer surface prior to poly deposition with a material which will cause the poly to preferentially nucleate during deposition and form poly nodules on the wafer surface. Polysilicon will continue to coat the previously created poly nodules throughout poly deposition, thereby resulting in a stable, texturized polysilicon structure.
Inventors
- 👤 Mark E. Tuttle
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 15:43
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/712; H10P; H10P14/00; H10P14/40; H10P14/416; Y; Y10; Y10S; Y10S438/00; Y10S438/964
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
123 words
A process for texturizing polycrystalline silicon deposited on a silicon wafer surface, comprising the following steps of: a) pretreating the wafer surface with particles of 30-300 angstroms in diameter about said wafer surface, said pretreating comprises evenly dispersing said particles, mixed into a liquid solution, by liquid spin-on and drying the wafer to evaporate the liquid thereby leaving said particles adhered to said wafer surface; b) depositing an initial layer of said polycrystalline silicon on said wafer surface whereby presence of said particles cause said initial polycrystalline silicon layer to coat said particles and thereby form poly nodules; c) depositing subsequent conformal polycrystalline silicon layers superjacent to said wafer surface thereby coating said poly nodules and causing said polysilicon structure to become texturized.
Claim 2
Dependent Claim
123 words
A process for texturizing polycrystalline silicon deposited on a silicon wafer surface, comprising the following steps of: a) pretreating the wafer surface with particles of 30-300 angstroms in diameter about said wafer surface, said pretreating comprises evenly dispersing said particles, mixed into a liquid solution, by liquid spin-on and drying the wafer to evaporate the liquid thereby leaving said particles adhered to said wafer surface; b) depositing an initial layer of said polycrystalline silicon on said wafer surface whereby presence of said particles cause said initial polycrystalline silicon layer to coat said particles and thereby form poly nodules; c) depositing subsequent conformal polycrystalline silicon layers superjacent to said wafer surface thereby coating said poly nodules and causing said polysilicon structure to become texturized.
Claim 3
Dependent Claim
10 words
The process of claim 1, wherein said particles are Si.
Claim 4
Dependent Claim
10 words
The process of claim 1, wherein said particles are SiO2.
Claim 5
Dependent Claim
13 words
The process of claim 1, wherein said liquid solution is an alcohol-based solvent.
Claim 6
Dependent Claim
15 words
The process of claim 1, wherein said liquid solution is a colloidal suspension of particles.
Claim 7
Dependent Claim
12 words
The process of claim 1, wherein said liquid solution is a slurry.
Claim 8
Dependent Claim
121 words
A process for texturizing polycrystalline solution deposited on a silicon wafer surface, comprising the following steps of: a) pretreating the wafer surface with particles of 30-300 angstroms in diameter dispersed about said wafer surface, said pretreating comprises dipping the wafer into a liquid tank containing a colloidal suspension of particles and drying said wafer thereby leaving said particles adhered to said wafer surface; b) depositing an initial layer of said polycrystalline silicon on said wafer surface whereby presence of said particles cause said initial polycrystalline silicon layer to coat said particles and thereby form poly nodules; c) depositing subsequent conformal polycrystalline silicon layers superjacent to said wafer surface thereby coating said poly nodules and causing said polysilicon structure to become texturized.
Claim 9
Dependent Claim
121 words
A process for texturizing polycrystalline solution deposited on a silicon wafer surface, comprising the following steps of: a) pretreating the wafer surface with particles of 30-300 angstroms in diameter dispersed about said wafer surface, said pretreating comprises dipping the wafer into a liquid tank containing a colloidal suspension of particles and drying said wafer thereby leaving said particles adhered to said wafer surface; b) depositing an initial layer of said polycrystalline silicon on said wafer surface whereby presence of said particles cause said initial polycrystalline silicon layer to coat said particles and thereby form poly nodules; c) depositing subsequent conformal polycrystalline silicon layers superjacent to said wafer surface thereby coating said poly nodules and causing said polysilicon structure to become texturized.
Claim 10
Dependent Claim
101 words
A process for texturizing polycrystalline silicon deposited on a silicon wafer surface, comprising the following steps of: a) pretreating the wafer surface with particles of 30-300 angstroms in diameter dispersed about said wafer surface, said pretreating comprises subjecting said wafer surface to water; b) depositing an initial layer of said polycrystalline silicon on said wafer surface whereby presence of said particles cause said initial polycrystalline silicon layer to coat said particles and thereby form poly nodules; c) depositing subsequent conformal polycrystalline silicon layers superjacent to said wafer surface thereby coating said poly nodules and causing said polysilicon structure to become texturized.
Claim 11
Dependent Claim
101 words
A process for texturizing polycrystalline silicon deposited on a silicon wafer surface, comprising the following steps of: a) pretreating the wafer surface with particles of 30-300 angstroms in diameter dispersed about said wafer surface, said pretreating comprises subjecting said wafer surface to water; b) depositing an initial layer of said polycrystalline silicon on said wafer surface whereby presence of said particles cause said initial polycrystalline silicon layer to coat said particles and thereby form poly nodules; c) depositing subsequent conformal polycrystalline silicon layers superjacent to said wafer surface thereby coating said poly nodules and causing said polysilicon structure to become texturized.
Claim 12
Dependent Claim
102 words
A process for texturizing polycrystalline silicon deposited on a silicon wafer surface, comprising the following steps of: a) pretreating the wafer surface with particles of 30-300 angstroms in diameter dispersed about said wafer surface, said pretreating comprises subjecting said wafer surface to a hydrocarbon; b) depositing an initial layer of said polycrystalline silicon on said wafer surface whereby presence of said particles cause said initial polycrystalline silicon layer to coat said particles and thereby form poly nodules; c) depositing subsequent conformal polycrystalline silicon layers superjacent to said wafer surface thereby coating said poly nodules and causing said polysilicon structure to become texturized.
Claim 13
Dependent Claim
102 words
A process for texturizing polycrystalline silicon deposited on a silicon wafer surface, comprising the following steps of: a) pretreating the wafer surface with particles of 30-300 angstroms in diameter dispersed about said wafer surface, said pretreating comprises subjecting said wafer surface to a hydrocarbon; b) depositing an initial layer of said polycrystalline silicon on said wafer surface whereby presence of said particles cause said initial polycrystalline silicon layer to coat said particles and thereby form poly nodules; c) depositing subsequent conformal polycrystalline silicon layers superjacent to said wafer surface thereby coating said poly nodules and causing said polysilicon structure to become texturized.
Claim 14
Dependent Claim
136 words
A process for texturizing a polysilicon storage node capacitor cell plate in a DRAM fabricated on a silicon wafer, comprising the following steps of: a) pretreating the wafer surface with particles of 30-300 angstroms in diameter, dispersed evenly about said wafer surface, said pretreating comprises evenly dispersing Si particles mixed into a liquid solution by liquid spin-on and drying said wafer to evaporate the liquid thereby leaving said Si particles adhered to said wafer surface; b) depositing an initial layer of said polycrystalline silicon on said wafer surface whereby presence of said particles cause said initial polycrystalline silicon layer to nucleate and thereby form poly nodules; and c) depositing subsequent conformal polycrystalline silicon layers superjacent to said wafer surface thereby coating said poly nodules and causing said polysilicon storage node capacitor cell plate to become texturized.
Claim 15
Dependent Claim
136 words
A process for texturizing a polysilicon storage node capacitor cell plate in a DRAM fabricated on a silicon wafer, comprising the following steps of: a) pretreating the wafer surface with particles of 30-300 angstroms in diameter, dispersed evenly about said wafer surface, said pretreating comprises evenly dispersing Si particles mixed into a liquid solution by liquid spin-on and drying said wafer to evaporate the liquid thereby leaving said Si particles adhered to said wafer surface; b) depositing an initial layer of said polycrystalline silicon on said wafer surface whereby presence of said particles cause said initial polycrystalline silicon layer to nucleate and thereby form poly nodules; and c) depositing subsequent conformal polycrystalline silicon layers superjacent to said wafer surface thereby coating said poly nodules and causing said polysilicon storage node capacitor cell plate to become texturized.
Claim 16
Dependent Claim
136 words
A process for texturizing a polysilicon storage node capacitor cell plate in a DRAM fabricated on a silicon wafer, comprising the following steps of: a) pretreating the wafer surface with particles of 30-300 angstroms in diameter, dispersed evenly about said wafer surface, said pretreating comprises evenly dispersing SiO2 particles mixed into a liquid solution by liquid spin-on and drying said wafer to evaporate the liquid thereby leaving said SiO2 particles adhered to said wafer surface; b) depositing an initial layer of said polycrystalline silicon on said wafer surface whereby presence of said particles cause said initial polycrystalline silicon layer to nucleate and thereby form poly nodules; and c) depositing subsequent conformal polycrystalline silicon layers superjacent to said wafer surface thereby coating said poly nodules and causing said polysilicon storage node capacitor cell plate to become texturized.
Claim 17
Dependent Claim
136 words
A process for texturizing a polysilicon storage node capacitor cell plate in a DRAM fabricated on a silicon wafer, comprising the following steps of: a) pretreating the wafer surface with particles of 30-300 angstroms in diameter, dispersed evenly about said wafer surface, said pretreating comprises evenly dispersing SiO2 particles mixed into a liquid solution by liquid spin-on and drying said wafer to evaporate the liquid thereby leaving said SiO2 particles adhered to said wafer surface; b) depositing an initial layer of said polycrystalline silicon on said wafer surface whereby presence of said particles cause said initial polycrystalline silicon layer to nucleate and thereby form poly nodules; and c) depositing subsequent conformal polycrystalline silicon layers superjacent to said wafer surface thereby coating said poly nodules and causing said polysilicon storage node capacitor cell plate to become texturized.
Claim 18
Dependent Claim
132 words
A process for texturizing a polysilicon storage node capacitor cell plate in a DRAM fabricated on a silicon wafer, comprising the following steps of: a) pretreating the wafer surface with particles of 30-300 angstroms in diameter, dispersed evenly about said wafer surface, said pretreating comprises dipping said wafer into a liquid tank containing a colloidal suspension of particles and drying said wafer thereby leaving said particles adhered to said wafer surface; b) depositing the initial layer of said polycrystalline silicon on said wafer surface whereby presence of said particles cause said initial polycrystalline silicon layer to nucleate and thereby form poly nodules; and c) depositing subsequent conformal polycrystalline silicon layers superjacent to said wafer surface thereby coating said poly nodules and causing said polysilicon storage node capacitor cell plate to become texturized.
Claim 19
Dependent Claim
132 words
A process for texturizing a polysilicon storage node capacitor cell plate in a DRAM fabricated on a silicon wafer, comprising the following steps of: a) pretreating the wafer surface with particles of 30-300 angstroms in diameter, dispersed evenly about said wafer surface, said pretreating comprises dipping said wafer into a liquid tank containing a colloidal suspension of particles and drying said wafer thereby leaving said particles adhered to said wafer surface; b) depositing the initial layer of said polycrystalline silicon on said wafer surface whereby presence of said particles cause said initial polycrystalline silicon layer to nucleate and thereby form poly nodules; and c) depositing subsequent conformal polycrystalline silicon layers superjacent to said wafer surface thereby coating said poly nodules and causing said polysilicon storage node capacitor cell plate to become texturized.
Claim 20
Dependent Claim
112 words
A process for texturizing a polysilicon storage node capacitor cell plate in a DRAM fabricated on a silicon wafer, comprising the following steps of: a) pretreating the wafer surface with particles of 30-300 angstroms in diameter, dispersed evenly about said wafer surface, said pretreating comprises subjecting said wafer surface to water; b) depositing an initial layer of said polycrystalline silicon on said wafer surface whereby presence of said particles cause said initial polycrystalline silicon layer to nucleate and thereby form poly nodules; and c) depositing subsequent conformal polycrystalline silicon layers superjacent to said wafer surface thereby coating said poly nodules and causing said polysilicon storage node capacitor cell plate to become texturized.
Claim 21
Dependent Claim
112 words
A process for texturizing a polysilicon storage node capacitor cell plate in a DRAM fabricated on a silicon wafer, comprising the following steps of: a) pretreating the wafer surface with particles of 30-300 angstroms in diameter, dispersed evenly about said wafer surface, said pretreating comprises subjecting said wafer surface to water; b) depositing an initial layer of said polycrystalline silicon on said wafer surface whereby presence of said particles cause said initial polycrystalline silicon layer to nucleate and thereby form poly nodules; and c) depositing subsequent conformal polycrystalline silicon layers superjacent to said wafer surface thereby coating said poly nodules and causing said polysilicon storage node capacitor cell plate to become texturized.
Claim 22
Dependent Claim
113 words
A process for texturizing a polysilicon storage node capacitor cell plate in a DRAM fabricated on a silicon wafer, comprising the following steps of: a) pretreating the wafer surface with particles of 30-300 angstroms in diameter, dispersed evenly about said wafer surface, said pretreating comprises subjecting said wafer surface to a hydrocarbon; b) depositing an initial layer of said polycrystalline silicon on said wafer surface whereby presence of said particles cause said initial polycrystalline silicon layer to nucleate and thereby form poly nodules; and c) depositing subsequent conformal polycrystalline silicon layers superjacent to said wafer surface thereby coating said poly nodules and causing said polysilicon storage node capacitor cell plate to become texturized.
Claim 23
Dependent Claim
113 words
A process for texturizing a polysilicon storage node capacitor cell plate in a DRAM fabricated on a silicon wafer, comprising the following steps of: a) pretreating the wafer surface with particles of 30-300 angstroms in diameter, dispersed evenly about said wafer surface, said pretreating comprises subjecting said wafer surface to a hydrocarbon; b) depositing an initial layer of said polycrystalline silicon on said wafer surface whereby presence of said particles cause said initial polycrystalline silicon layer to nucleate and thereby form poly nodules; and c) depositing subsequent conformal polycrystalline silicon layers superjacent to said wafer surface thereby coating said poly nodules and causing said polysilicon storage node capacitor cell plate to become texturized.
References Cited (Backward Citations)
JPS59123279A
Cited
JPS63239937A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1995-04-07 | 1995-10-07 | 1996-04-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-04-07 | 1999-10-07 | 2000-04-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-04-07 | 2003-10-07 | 2004-04-07 | $7700.00 | Window Closed / Lapsed |