US6638802B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Forming strained source drain junction field effect transistors
Assignee: Intel Corp
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Filing: 2002-06-20
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Granted: 2003-10-28
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Expires: 2022-06-20
Abstract
Abstract By providing a high dose germanium implant and then forming a P-type source/drain extension, a strained source/drain junction may be formed. The strained source/drain junction may be shallower and have lower resistivity in some embodiments.
Inventors
- 👤 Jack Hwang
- 👤 Craig Andyke
- 👤 Mitchell Taylor
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 11:32
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/60; H10D30/791; H10D30/797; H10D64/00; H10D64/01; H10D64/015; H10P30/208; H10P30/21; H10P30/28
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
28 words
A method comprising: implanting germanium at a dose greater than about 2E16 atoms/cm2; and forming a P-type source/drain extension in the region that has been implanted with germanium.
Claim 2
Independent Claim
28 words
A method comprising: implanting germanium at a dose greater than about 2E16 atoms/cm2; and forming a P-type source/drain extension in the region that has been implanted with germanium.
Claim 3
Dependent Claim
16 words
The method of claim 1 including implanting germanium using an energy of at least 10 keV.
Claim 4
Dependent Claim
17 words
The method of claim 1 including implanting the germanium to a depth greater than about 200 Angstroms.
Claim 5
Dependent Claim
20 words
The method of claim 1 wherein forming a P-type source/drain extension includes implanting boron into the region implanted with germanium.
Claim 6
Dependent Claim
17 words
The method of claim 1 including implanting the germanium using sidewall spacers on a polysilicon gate structure.
Claim 7
Dependent Claim
11 words
The method of claim 1 including forming a strained source/drain extension.
Claim 8
Dependent Claim
17 words
The method of claim 1 including implanting a P-type impurity into a region already implanted with germanium.
Claim 9
Dependent Claim
19 words
The method of claim 7 including implanting germanium and P-type impurity at a ratio greater than 1 to 1.
Claim 10
Dependent Claim
19 words
The method of claim 8 including implanting germanium and P-type impurity at a ratio of approximately 4 to 1.
Claim 11
Dependent Claim
13 words
The method of claim 9 wherein implanting P-type impurities includes implanting boron impurities.
Claim 12
Independent Claim
33 words
A method comprising: implanting germanium; and doping the region that has been implanted germanium with a P-type dopant to form a source/drain extension having a higher concentration of germanium ions than P-type ions.
Claim 13
Independent Claim
33 words
A method comprising: implanting germanium; and doping the region that has been implanted germanium with a P-type dopant to form a source/drain extension having a higher concentration of germanium ions than P-type ions.
Claim 14
Dependent Claim
20 words
The method of claim 11 including implanting germanium and the P-type impurity at a ratio greater than one to one.
Claim 15
Dependent Claim
20 words
The method of claim 12 including implanting germanium and the P-type impurity at a ratio of approximately four to one.
Claim 16
Dependent Claim
18 words
The method of claim 13 including implanting germanium at a dose greater than about 2E16 atoms/cm 2 .
Claim 17
Independent Claim
39 words
A method comprising: forming a gate structure; implanting germanium at a dose greater than about 2E16 atoms/cm 2 with said gate structure in place; and forming a P-type source/drain extension in the region that has been implanted with germanium.
Claim 18
Independent Claim
39 words
A method comprising: forming a gate structure; implanting germanium at a dose greater than about 2E16 atoms/cm 2 with said gate structure in place; and forming a P-type source/drain extension in the region that has been implanted with germanium.
Claim 19
Dependent Claim
20 words
The method of claim 15 including implanting germanium and a P-type impurity at a ratio greater than one to one.
Claim 20
Dependent Claim
20 words
The method of claim 16 including implanting germanium and a P-type impurity at a ratio of approximately four to one.
Claim 21
Dependent Claim
18 words
The method of claim 15 including applying a cap layer to said gate structure before implanting said germanium.
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