US6486510B2
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US
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Reduction of reverse short channel effects by implantation of neutral dopants
Assignee: International Business Machines Corp
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Filing: 2001-11-12
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Granted: 2002-11-26
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Expires: 2021-11-12
Abstract
Abstract A FET with reduced reverse short channel effects is described, as well as a method to make said FET. Germanium is implanted throughout a semiconductor substrate at an intensity and dose such that a peak ion concentration is created below the source and drain of the FET. The germanium can be implanted prior to gate and source and drain formation, and reduces the reverse short channel effect normally seen in FETs. The short channel effect normally occurring in FETs is not negatively impacted by the germanium implant.
Inventors
- 👤 Jeffrey Scott Brown
- 👤 Stephen Scott Furkay
- 👤 Robert J. Gauthier, Jr.
- 👤 Dale Warner Martin
- 👤 James Albert Slinkman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 12:59
CPC Classifications
H; H10; H10P; H10P10/00; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D30/00; H10D30/60; H10D30/751; H10D62/00; H10D62/10; H10D62/17; H10D62/213; H10D62/221; H10D62/235; H10D62/314; H10D62/351; H10D62/357; H10D62/364; H10P30/208; H10P30/222; H10D30/01; H10D30/021; H10D30/0223
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
97 words
A semiconductor device comprising: a semiconductor substrate; a first diffusion region disposed in said substrate; a second diffusion region disposed in said substrate; a channel region disposed between said first diffusion region and said second diffusion region; a gate oxide disposed on said semiconductor substrate over said channel region and overlapping said first diffusion region and said second diffusion region; a gate electrode disposed on said gate oxide; and, a neutral dopant diffusion implant disposed throughout said substrate, said neutral dopant diffusion implant having a peak concentration below said first diffusion region and said second diffusion region.
Claim 2
Dependent Claim
97 words
A semiconductor device comprising: a semiconductor substrate; a first diffusion region disposed in said substrate; a second diffusion region disposed in said substrate; a channel region disposed between said first diffusion region and said second diffusion region; a gate oxide disposed on said semiconductor substrate over said channel region and overlapping said first diffusion region and said second diffusion region; a gate electrode disposed on said gate oxide; and, a neutral dopant diffusion implant disposed throughout said substrate, said neutral dopant diffusion implant having a peak concentration below said first diffusion region and said second diffusion region.
Claim 3
Dependent Claim
20 words
The device of claim 1 wherein said neutral dopant diffusion implant is germanium and said semiconductor device is a FET.
Claim 4
Dependent Claim
29 words
The device of claim 1 wherein said neutral dopant diffusion implant is germanium and said first diffusion region and said second diffusion region are source and drain diffusion regions.
Claim 5
Dependent Claim
18 words
The device of claim 1 wherein said neutral dopant diffusion implant is germanium and said gate is polysilicon.
Claim 6
Dependent Claim
19 words
The device of claim 1 wherein said neutral dopant diffusion implant is germanium and said semiconductor substrate is silicon.
Claim 7
Dependent Claim
30 words
The device of claim 1 wherein said neutral dopant diffusion implant is germanium and said germanium diffusion implant has a peak concentration from about 0.10 to about 0.50 microns deep.
Claim 8
Dependent Claim
22 words
The device of claim 6 wherein said germanium diffusion implant has a peak concentration from about 0.15 to about 0.30 microns deep.
Claim 9
Dependent Claim
22 words
The device of claim 7 wherein said germanium diffusion implant has a peak concentration from about 0.20 to about 0.25 microns deep.
Claim 10
Dependent Claim
35 words
The device of claim 1 wherein said neutral dopant diffusion implant is germanium, and said germanium diffusion implant has a peak concentration of about 10 19 to about 10 21 germanium ions cm −3 .
Claim 11
Dependent Claim
23 words
The device of claim 9 wherein said germanium diffusion implant has a peak concentration of about 10 20 germanium ions cm −3 .
Claim 12
Dependent Claim
28 words
The device of claim 1 wherein said neutral dopant diffusion implant is germanium and said gate insulating layer has a thickness of about 4 to about 11 nm.
Claim 13
Dependent Claim
26 words
The device of claim 1 wherein said neutral dopant diffusion implant is germanium and said gate has a thickness of about 100 to about 200 nm.
Claim 14
Dependent Claim
13 words
The device of claim 1 wherein said neutral dopant diffusion implant is silicon.
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| 3.5 Years (Year 4) | 2005-11-25 | 2006-05-27 | 2006-11-26 | $2000.00 | Window Closed / Lapsed |
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