US6475885B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Source/drain formation with sub-amorphizing implantation
Assignee: GlobalFoundries US Inc
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Filing: 2001-06-29
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Granted: 2002-11-05
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Expires: 2021-06-29
Abstract
Abstract Various methods of fabricating a source/drain structure are provided. In one aspect, a method of processing a semiconductor workpiece is provided that includes implanting a neutral ion species into the substrate at a sub-amorphizing dosage to provide a plurality of interstitials and forming a source/drain region in the substrate by implanting impurities of a first conductivity type proximate the plurality of interstitials. The plurality of interstitials retards diffusion of the impurities. Impurity diffusion is retarded, resulting in better activation and a more abrupt impurity profile.
Inventors
- 👤 Akif Sultan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 10:28
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D30/031; H10D30/0321; H10D30/0323; H10D30/60; H10D30/67; H10D30/6704; H10D30/6706; H10P30/208; H10P30/22; H10P30/221; H10P30/222
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
56 words
A method of processing a semiconductor workpiece, comprising: implanting a neutral ion species into the substrate at a sub-amorphizing dosage to provide a plurality of interstitials; and forming a source/drain region in the substrate by implanting impurities of a first conductivity type proximate the plurality of interstitials, the plurality of interstitials retarding diffusion of the impurities.
Claim 2
Independent Claim
56 words
A method of processing a semiconductor workpiece, comprising: implanting a neutral ion species into the substrate at a sub-amorphizing dosage to provide a plurality of interstitials; and forming a source/drain region in the substrate by implanting impurities of a first conductivity type proximate the plurality of interstitials, the plurality of interstitials retarding diffusion of the impurities.
Claim 3
Dependent Claim
13 words
The method of claim 1 , wherein the neutral ion species comprises silicon.
Claim 4
Dependent Claim
13 words
The method of claim 1 , wherein the neutral ion species comprises germanium.
Claim 5
Dependent Claim
19 words
The method of claim 1 , wherein the forming of the source/drain region comprises forming a source/drain extension region.
Claim 6
Dependent Claim
19 words
The method of claim 1 , comprising forming a gate dielectric layer and a gate electrode on the substrate.
Claim 7
Dependent Claim
18 words
The method of claim 5 , comprising forming a pair of insulating spacers adjacent to the gate electrode.
Claim 8
Dependent Claim
15 words
The method of claim 1 , comprising forming a halo region around the source/drain region.
Claim 9
Dependent Claim
22 words
The method of claim 1 , wherein the forming of the source/drain region comprises annealing the substrate to activate the source/drain region.
Claim 10
Independent Claim
55 words
A method of processing, comprising: implanting a neutral ion species into a silicon-on-insulator substrate at a sub-amorphizing dosage to provide a plurality of interstitials; and forming a source/drain region in the silicon-on-insulator substrate by implanting impurities of a first conductivity type proximate the plurality of interstitials, the plurality of interstitials retarding diffusion of the impurities.
Claim 11
Independent Claim
55 words
A method of processing, comprising: implanting a neutral ion species into a silicon-on-insulator substrate at a sub-amorphizing dosage to provide a plurality of interstitials; and forming a source/drain region in the silicon-on-insulator substrate by implanting impurities of a first conductivity type proximate the plurality of interstitials, the plurality of interstitials retarding diffusion of the impurities.
Claim 12
Dependent Claim
13 words
The method of claim 9 , wherein the neutral ion species comprises silicon.
Claim 13
Dependent Claim
13 words
The method of claim 9 , wherein the neutral ion species comprises germanium.
Claim 14
Dependent Claim
19 words
The method of claim 9 , wherein the forming of the source/drain region comprises forming a source/drain extension region.
Claim 15
Dependent Claim
20 words
The method of claim 9 , comprising forming a gate dielectric layer and a gate electrode on the silicon-on-insulator substrate.
Claim 16
Dependent Claim
18 words
The method of claim 13 , comprising forming a pair of insulating spacers adjacent to the gate electrode.
Claim 17
Dependent Claim
15 words
The method of claim 9 , comprising forming a halo region around the source/drain region.
Claim 18
Dependent Claim
23 words
The method of claim 9 , wherein the forming of the source/drain region comprises annealing the silicon-on-insulator substrate to activate the source/drain region.
Claim 19
Independent Claim
63 words
A method of forming a source/drain extension region in a semiconductor substrate, comprising: implanting a neutral ion species into the substrate at a sub-amorphizing dosage to provide a plurality of interstitials; and implanting impurities of a first conductivity type proximate the plurality of interstitials; and annealing the substrate to activate the implanted impurities, the plurality of interstitials retarding diffusion of the implanted impurities.
Claim 20
Independent Claim
63 words
A method of forming a source/drain extension region in a semiconductor substrate, comprising: implanting a neutral ion species into the substrate at a sub-amorphizing dosage to provide a plurality of interstitials; and implanting impurities of a first conductivity type proximate the plurality of interstitials; and annealing the substrate to activate the implanted impurities, the plurality of interstitials retarding diffusion of the implanted impurities.
Claim 21
Dependent Claim
13 words
The method of claim 17 , wherein the neutral ion species comprises silicon.
Claim 22
Dependent Claim
13 words
The method of claim 17 , wherein the neutral ion species comprises germanium.
Claim 23
Dependent Claim
30 words
The method of claim 17 , comprising forming a gate dielectric layer and a gate electrode on the substrate, the implantation of the impurities being self-aligned to the gate electrode.
Claim 24
Dependent Claim
18 words
The method of claim 20 , comprising forming a pair of insulating spacers adjacent to the gate electrode.
Claim 25
Dependent Claim
16 words
The method of claim 17 , comprising forming a halo region around the source/drain extension region.
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