Magnetoresistive element and magnetic memory device

Claim 1

A magnetic memory device comprising: a memory cell comprising a first magnetization pinned layer whose magnetization direction is pinned, a first dielectric layer, a magnetic recording layer whose magnetization direction is reversible, a second dielectric layer, and a second magnetization pinned layer whose magnetization direction is pinned, the first magnetization pinned layer, the first dielectric layer, the magnetic recording layer, the second dielectric layer, and the second magnetization pinned layer being stacked in the order recited, the magnetic recording layer comprising a three-layered film of a magnetic layer, a nonmagnetic layer and a magnetic layer, the two magnetic layers constituting the three-layered film being anti-ferromagnetically coupled, magnetization directions of the two magnetization pinned layers in regions in contact with each dielectric layer being substantially anti-parallel to each other, magnetization directions of the first magnetization pinned layer and the magnetic layer of the magnetic recording layer in regions in contact with the first dielectric layer being substantially parallel or anti-parallel to each other when no current magnetic field is applied, and magnetization directions of the second magnetization pinned layer and the magnetic recording layer of the magnetic recording layer in regions in contact with the second dielectric layer being substantially parallel or anti-parallel to each other when no current magnetic field is applied; a bit line extending to a first direction; and a word line extending to a second direction crossing the first direction.