US5534355A
Expired / Lapsed
US
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Artificial multilayer and method of manufacturing the same
Assignee: Toshiba Corp
•
Filing: 1995-04-19
•
Granted: 1996-07-09
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Expires: 2015-04-19
Abstract
Abstract Disclosed is an artificial multilayer in which ferromagnetic layers and nonmagnetic layers are alternatively laminated, wherein a uniaxial magnetic anisotropy is introduced into the ferromagnetic layers in a predetermined direction, thereby controlling the gradient of the relative change of resistivity to the change of external magnetic field. The uniaxial magnetic anisotropy is introduced into the ferromagnetic layers by applying a magnetic field along the surface of ferromagnetic layers during the formation thereof.
Inventors
- 👤 Shiho Okuno
- 👤 Susumu Hashimoto
- 👤 Keiichiro Yusu
- 👤 Koichiro Inomata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 03:11
CPC Classifications
H; H01; H01F; H01F10/00; H01F10/32; H01F10/324; H01F10/3268; H01F10/3281; B; B82; B82Y; B82Y25/00; B82Y40/00; H01F41/00; H01F41/14; H01F41/30; H01F41/302; H10; H10N; H10N50/00; H10N50/80; H10N50/85; G; G11; G11B; G11B5/00; G11B5/127; G11B5/33; G11B5/39; G11B5/3903; Y; Y10; Y10S; Y10S428/00; Y10S428/90; Y10S428/922; Y10S428/9265; Y10S428/928; Y10T; Y10T428/00; Y10T428/11; Y10T428/1107; Y10T428/1121; Y10T428/1129; Y10T428/12; Y10T428/12493; Y10T428/12632; Y10T428/12771; Y10T428/12806; Y10T428/12819; Y10T428/12826; Y10T428/12847; Y10T428/12854; Y10T428/12861; Y10T428/12889; Y10T428/12903; Y10T428/12944; Y10T428/12951; Y10T428/24; Y10T428/24942; Y10T428/26; Y10T428/263; Y10T428/264; Y10T428/265
Claims Analysis
Total Claims: 61
Claim 1
Independent Claim
97 words
A magnetoresistance device comprising: ferromagnetic and non-magnetic layers which are laminated to form a multilayer structure, wherein said ferromagnetic layers have a uniaxial magnetic anisotropy along the surface of the said multilayer structure which is introduced by a magnetic field, each of said ferromagnetic layers having a thickness between 0.5 and 20 nm; a substrate having a non-singlecrystalline surface, wherein said ferromagnetic and non-magnetic layers are laminated upon said substrate; and means, coupled to said multilayer structure, for measuring resistivity of the multilayer structure along a direction that is parallel to the layers of the multilayer structure.
Claim 2
Dependent Claim
97 words
A magnetoresistance device comprising: ferromagnetic and non-magnetic layers which are laminated to form a multilayer structure, wherein said ferromagnetic layers have a uniaxial magnetic anisotropy along the surface of the said multilayer structure which is introduced by a magnetic field, each of said ferromagnetic layers having a thickness between 0.5 and 20 nm; a substrate having a non-singlecrystalline surface, wherein said ferromagnetic and non-magnetic layers are laminated upon said substrate; and means, coupled to said multilayer structure, for measuring resistivity of the multilayer structure along a direction that is parallel to the layers of the multilayer structure.
Claim 3
Dependent Claim
53 words
The device according to claim 1, wherein said ferromagnetic layers consist of at least one selected from a group consisting of Fe, Co, Ni, and their alloys and compounds, and said nonmagnetic layers consist of at least one selected from a group consisting of V, Cr, Cu, Au, and their alloys and compounds.
Claim 4
Dependent Claim
15 words
The device according to claim 1, wherein said ferromagnetic layers consist of a single material.
Claim 5
Dependent Claim
14 words
The device according to claim 1, wherein said ferromagnetic layers consist of different materials.
Claim 6
Dependent Claim
25 words
The artificial multilayer according to claim 4, wherein said materials forming the ferromagnetic layers differ from each other in the magnitude of the magnetic anisotropy.
Claim 7
Dependent Claim
35 words
The device according to claim 1, wherein the thickness of each of said nonmagnetic layers ranges between 0.5 to 20 nm, and the entire thickness of the laminated layers ranges between 30 to 500 nm.
Claim 8
Dependent Claim
33 words
The device according to claim 1, wherein the direction of the uniaxial magnetic anisotropy in a first ferromagnetic layer differs from that in a second ferromagnetic layer adjacent to said first ferromagnetic layer.
Claim 9
Dependent Claim
27 words
The device according to claim 7, wherein the directions of the uniaxial magnetic anisotropies of the two adjacent ferromagnetic layers form an angle of 30° to 90°.
Claim 10
Dependent Claim
13 words
The device according to claim 1, wherein said substrate is a glass substrate.
Claim 11
Dependent Claim
23 words
A magnetoresistance device according to claim 1, wherein: said means for measuring resistivity comprises a source of electrical current and a voltage meter.
Claim 12
Dependent Claim
13 words
A device according to claim 1, wherein said ferromagnetic layers are non-singlecrystalline layers.
Claim 13
Dependent Claim
11 words
A device according to claim 1, wherein said substrate is non-singlecrystalline.
Claim 14
Dependent Claim
96 words
A magnetoresistance device comprising: ferromagnetic and non-magnetic layers which are alternately laminated to form a multilayer structure, wherein said ferromagnetic layers have a uniaxial magnetic anisotropy along the surface of said multilayer structure which is introduced by a magnetic field, each of said ferromagnetic layers having a thickness between 0.5 and 20 nm; a substrate having a non-singlecrystalline wherein said ferromagnetic and non-magnetic layers are laminated upon said substrate; and means, coupled to said multilayer structure, for measuring resistivity of said multilayer structure along a direction that is parallel to the layers of the multilayer structure.
Claim 15
Dependent Claim
96 words
A magnetoresistance device comprising: ferromagnetic and non-magnetic layers which are alternately laminated to form a multilayer structure, wherein said ferromagnetic layers have a uniaxial magnetic anisotropy along the surface of said multilayer structure which is introduced by a magnetic field, each of said ferromagnetic layers having a thickness between 0.5 and 20 nm; a substrate having a non-singlecrystalline wherein said ferromagnetic and non-magnetic layers are laminated upon said substrate; and means, coupled to said multilayer structure, for measuring resistivity of said multilayer structure along a direction that is parallel to the layers of the multilayer structure.
Claim 16
Dependent Claim
23 words
A magnetoresistance device according to claim 13, wherein: said means for measuring resistivity comprises a source of electrical current and a voltage meter.
Claim 17
Dependent Claim
13 words
A device according to claim 13, wherein said ferromagnetic layers are non-singlecrystalline layers.
Claim 18
Dependent Claim
11 words
A device according to claim 13, wherein said substrate is non-singlecrystalline.
Claim 19
Dependent Claim
73 words
A magnetoresistance device, comprising: a multilayer structure having a major surface, said multilayer structure formed from a lamination of ferromagnetic and non-magnetic layers upon a substrate having a non-singlecrystalline surface, wherein said ferromagnetic layers have uniaxial magnetic anisotropy in a direction that is parallel to the major surface of the multilayer structure Which is introduced by a magnetic field; and means, coupled to said multilayer structure, for measuring resistivity of the multilayer structure.
Claim 20
Dependent Claim
73 words
A magnetoresistance device, comprising: a multilayer structure having a major surface, said multilayer structure formed from a lamination of ferromagnetic and non-magnetic layers upon a substrate having a non-singlecrystalline surface, wherein said ferromagnetic layers have uniaxial magnetic anisotropy in a direction that is parallel to the major surface of the multilayer structure Which is introduced by a magnetic field; and means, coupled to said multilayer structure, for measuring resistivity of the multilayer structure.
Claim 21
Dependent Claim
13 words
A device according to claim 15, wherein said ferromagnetic layers are non-singlecrystalline layers.
Claim 22
Dependent Claim
11 words
A device according to claim 17, wherein said substrate is non-singlecrystalline.
Claim 23
Dependent Claim
72 words
A magnetoresistance device, comprising: a multilayer structure having a major surface, said multilayer structure formed from ferromagnetic and nonmagnetic layers that are alternately laminated upon a substrate having a non-singlecrystalline surface, wherein said ferromagnetic layers have a uniaxial magnetic anisotropy that is parallel to the major surface of the multilayer structure which is introduced by a magnetic field; and means, coupled to said multilayer structure, for measuring resistivity of the multilayer structure.
Claim 24
Dependent Claim
72 words
A magnetoresistance device, comprising: a multilayer structure having a major surface, said multilayer structure formed from ferromagnetic and nonmagnetic layers that are alternately laminated upon a substrate having a non-singlecrystalline surface, wherein said ferromagnetic layers have a uniaxial magnetic anisotropy that is parallel to the major surface of the multilayer structure which is introduced by a magnetic field; and means, coupled to said multilayer structure, for measuring resistivity of the multilayer structure.
Claim 25
Dependent Claim
13 words
A device according to claim 20, wherein said ferromagnetic layers are non-singlecrystalline layers.
Claim 26
Dependent Claim
11 words
A device according to claim 20, wherein said substrate is non-singlecrystalline.
Claim 27
Dependent Claim
77 words
A magnetoresistance device for measuring a change in resistivity due to the presence of a magnetic field where the device is located, comprising: a substrate having a non-singlecrystalline surface; a multilayer structure formed from a lamination of ferromagnetic and non-magnetic layers upon said substrate, said lamination having a major surface; and wherein said ferromagnetic layers have a uniaxial magnetic anisotropy that is parallel to the major surface of the lamination which is introduced by a magnetic field.
Claim 28
Dependent Claim
77 words
A magnetoresistance device for measuring a change in resistivity due to the presence of a magnetic field where the device is located, comprising: a substrate having a non-singlecrystalline surface; a multilayer structure formed from a lamination of ferromagnetic and non-magnetic layers upon said substrate, said lamination having a major surface; and wherein said ferromagnetic layers have a uniaxial magnetic anisotropy that is parallel to the major surface of the lamination which is introduced by a magnetic field.
Claim 29
Dependent Claim
44 words
A device according to claim 23, further comprising: a means for measuring a change in resistivity that functions in the presence of a magnetic field of between zero and 1500 Oersted., of up to about ten percent of the resistivity of the multilayer structure.
Claim 30
Dependent Claim
13 words
A device according to claim 23, wherein said ferromagnetic layers are non-singlecrystalline layers.
Claim 31
Dependent Claim
11 words
A device according to claim 23, wherein said substrate is non-singlecrystalline.
Claim 32
Dependent Claim
81 words
A magnetoresistance device for measuring a change in resistivity due to the presence of a magnetic field where the device is located, comprising: a substrate having a non-singlecrystalline surface; a multilayer structure formed from ferromagnetic and non-magnetic layers which are alternately laminated upon said substrate to form a lamination that has a major surface; and wherein said ferromagnetic layers have a uniaxial magnetic anisotropy that is parallel to the major surface of the lamination which is introduced by a magnetic field.
Claim 33
Dependent Claim
81 words
A magnetoresistance device for measuring a change in resistivity due to the presence of a magnetic field where the device is located, comprising: a substrate having a non-singlecrystalline surface; a multilayer structure formed from ferromagnetic and non-magnetic layers which are alternately laminated upon said substrate to form a lamination that has a major surface; and wherein said ferromagnetic layers have a uniaxial magnetic anisotropy that is parallel to the major surface of the lamination which is introduced by a magnetic field.
Claim 34
Dependent Claim
44 words
A device according to claim 27, further comprising: a means for measuring a change in resistivity that functions in the presence of a magnetic field of between zero and 500 Oersted., of up to about ten percent of the resistivity of the multilayer structure.
Claim 35
Dependent Claim
13 words
A device according to claim 27, wherein said ferromagnetic layers are non-singlecrystalline layers.
Claim 36
Independent Claim
82 words
A method of manufacturing a magnetoresistance device comprising ferromagnetic and non-magnetic layers on a substrate, having a non-singlecrystalline surface said ferromagnetic and non-magnetic layers being alternately laminated one upon the other, said method comprising the steps of: depositing said ferromagnetic layers and non-magnetic layers upon said substrate, each of said ferromagnetic layers having a thickness between 0.5 and 20 nm; and introducing a uniaxial magnetic anisotropy into said ferromagnetic layers by applying a magnetic filed along the surface of said ferromagnetic layers.
Claim 37
Independent Claim
82 words
A method of manufacturing a magnetoresistance device comprising ferromagnetic and non-magnetic layers on a substrate, having a non-singlecrystalline surface said ferromagnetic and non-magnetic layers being alternately laminated one upon the other, said method comprising the steps of: depositing said ferromagnetic layers and non-magnetic layers upon said substrate, each of said ferromagnetic layers having a thickness between 0.5 and 20 nm; and introducing a uniaxial magnetic anisotropy into said ferromagnetic layers by applying a magnetic filed along the surface of said ferromagnetic layers.
Claim 38
Dependent Claim
23 words
The method according to claim 30, wherein a magnetic field is applied along the surface of said ferromagnetic layers during the formation thereof.
Claim 39
Dependent Claim
28 words
The method according to claim 30, wherein a magnetic field is applied along the surface of said ferromagnetic layer while heat treating after the formation of said multilayer.
Claim 40
Dependent Claim
53 words
The method according to claim 30, wherein said ferromagnetic layers consist of at least one selected from a group consisting of Fe, Co, Ni, and their alloys and compounds, and said nonmagnetic layers consist of at least one selected from a group consisting of V, Cr, Cu, Au, and their alloys and compounds.
Claim 41
Dependent Claim
15 words
The method according to claim 30, wherein said ferromagnetic layers consist of a single material.
Claim 42
Dependent Claim
14 words
The method according to claim 30, wherein said ferromagnetic layers consist of different materials.
Claim 43
Dependent Claim
21 words
The method according to claim 35, wherein said ferromagnetic layers differ from each other in the magnitude Of the magnetic anisotropy.
Claim 44
Dependent Claim
35 words
The method according to claim 30, wherein the thickness of each of said nonmagnetic layers ranges between 0.5 to 20 nm, and the entire thickness of the laminated layers ranges between 30 to 500 nm.
Claim 45
Dependent Claim
33 words
The method according to claim 30, wherein the direction of the uniaxial magnetic anisotropy in a first ferromagnetic layer differs from that in a second ferromagnetic layer adjacent to said first ferromagnetic layer.
Claim 46
Dependent Claim
27 words
The method according to claim 38, wherein the directions of the uniaxial magnetic anisotropies of the two adjacent ferromagnetic layers form an angle of 30° to 90°.
Claim 47
Dependent Claim
14 words
The method according to claim 30, wherein said non-singlecrystalline substrate is a glass substrate.
Claim 48
Dependent Claim
22 words
A method according to claim 30, wherein the means for measuring resistivity comprises a source of electrical current and a voltage meter.
Claim 49
Dependent Claim
13 words
A method according to claim 30, wherein said ferromagnetic layers are non-singlecrystalline layers.
Claim 50
Dependent Claim
11 words
A method according to claim 30, wherein said substrate is non-singlecrystalline.
Claim 51
Independent Claim
89 words
A method of manufacturing a magnetoresistance device comprising ferromagnetic and non-magnetic layers, said ferromagnetic and non-magnetic layers being alternately laminated one upon the other to form a lamination having a major surface, said method comprising the steps of: depositing said ferromagnetic and non-magnetic layers on a substrate having a non-singlecrystalline surface; introducing uniaxial magnetic anisotropy into said ferromagnetic layers by applying a magnetic field that is parallel to the major surface of the lamination; and connecting a means for measuring resistivity to at least one of the non-magnetic layers.
Claim 52
Independent Claim
89 words
A method of manufacturing a magnetoresistance device comprising ferromagnetic and non-magnetic layers, said ferromagnetic and non-magnetic layers being alternately laminated one upon the other to form a lamination having a major surface, said method comprising the steps of: depositing said ferromagnetic and non-magnetic layers on a substrate having a non-singlecrystalline surface; introducing uniaxial magnetic anisotropy into said ferromagnetic layers by applying a magnetic field that is parallel to the major surface of the lamination; and connecting a means for measuring resistivity to at least one of the non-magnetic layers.
Claim 53
Dependent Claim
13 words
A method according to claim 44, wherein said ferromagnetic layers are non-singlecrystalline layers.
Claim 54
Dependent Claim
11 words
A method according to claim 44, wherein said substrate is non-singlecrystalline.
Claim 55
Independent Claim
100 words
A method of measuring a magnetic field with a magnetoresistance device, comprising the steps of: forming a magnetoresistance device comprising a multilayer structure comprising a substrate having a non-single crystalline surface and a lamination of ferromagnetic and non-magnetic layers on said substrate, said lamination having a major surface, and said ferromagnetic layers having uniaxial magnetic anisotropy introduced by deposition in a magnetic field or annealing in a magnetic field along said major surface; disposing the multilayer structure in a first magnetic field; and measuring a resistivity of the multilayer structure while the multilayer structure is in the first magnetic field.
Claim 56
Independent Claim
100 words
A method of measuring a magnetic field with a magnetoresistance device, comprising the steps of: forming a magnetoresistance device comprising a multilayer structure comprising a substrate having a non-single crystalline surface and a lamination of ferromagnetic and non-magnetic layers on said substrate, said lamination having a major surface, and said ferromagnetic layers having uniaxial magnetic anisotropy introduced by deposition in a magnetic field or annealing in a magnetic field along said major surface; disposing the multilayer structure in a first magnetic field; and measuring a resistivity of the multilayer structure while the multilayer structure is in the first magnetic field.
Claim 57
Dependent Claim
15 words
A method according to claim 47, wherein the ferromagnetic and non-magnetic layers are alternately laminated.
Claim 58
Dependent Claim
11 words
A device according to claim 48, wherein said substrate is non-singlecrystalline.
Claim 59
Dependent Claim
24 words
A method according to claim 47, wherein the resistivity is measured along a direction that is parallel to the layers of the multilayer structure.
Claim 60
Dependent Claim
13 words
A method according to claim 47, wherein said ferromagnetic layers are non-singlecrystalline layers.
Claim 61
Dependent Claim
11 words
A method according to claim 47, wherein said substrate is non-singlecrystalline.
References Cited (Backward Citations)
US3350180A
Cited
US3375091A
Cited
US3516076A
Cited
FR2452168A3
Cited
US4686472A
Cited
US4576876A
Cited
US4687712A
Cited
US4587176A
Cited
US4677032A
Cited
US4847161A
Cited
US4935311A
Cited
US4949039A
Cited
US5051288A
Cited
US5134533A
Cited
US5132859A
Cited
US5206590A
Cited
US5159513A
Cited
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